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Journal: Sensors, 2018
Volume: 18
Number: 2795
Article:
Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications
Authors:
by
Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou and Min-Hung Lee
Link:
https://www.mdpi.com/1424-8220/18/9/2795
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