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Chen P-G, Chen K-T, Tang M, Wang Z-Y, Chou Y-C, Lee M-H. Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. Sensors. 2018; 18(9):2795. https://doi.org/10.3390/s18092795

Chen, Pin-Guang, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, and Min-Hung Lee. 2018. "Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications" Sensors 18, no. 9: 2795. https://doi.org/10.3390/s18092795

Chen, P.-G., Chen, K.-T., Tang, M., Wang, Z.-Y., Chou, Y.-C., & Lee, M.-H. (2018). Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. Sensors, 18(9), 2795. https://doi.org/10.3390/s18092795