Search Results (15)

This work presents a high-performance novel photodetector based on two-dimensional boron nitride (BN) nanosheets functionalized with gold nanoparticles (Au NPs), offering ultra-broadband photoresponse from 0.25 to 5.9 μm. Operating in both photovoltaic and photoconductive modes, the device features rapid response times (<0.5 ms), high responsivity (up to 1015 mA/W at 250 nm and 2.5 V bias), and thermal stability up to 100 °C. The synthesis process involved CO₂ laser exfoliation of hexagonal boron nitride, followed by gold NP deposition via RF sputtering and thermal annealing. Structural and compositional analyses confirmed the formation of a three-dimensional network of atomically thin BN nanosheets decorated with uniformly distributed gold nanoparticles. This architecture facilitates plasmon-enhanced absorption and efficient charge separation via heterojunction interfaces, significantly boosting photocurrent generation across the deep ultraviolet (DUV), visible, near-infrared (NIR), and mid-infrared (MIR) spectral regions. First-principles calculations support the observed broadband response, confirming bandgap narrowing induced by defects in h-BN and functionalization by gold nanoparticles. The device’s self-driven operation, wide spectral response, and durability under elevated temperatures underscore its strong potential for next-generation broadband, self-powered, and wearable sensing and optoelectronic applications. Full article

Burgeoning two-dimensional (2D) materials provide more opportunities to overcome the shortcomings of silicon-based photodetectors. However, the inevitable carrier loss in the 2D material/Si heterojunction has seriously hindered further improvement in responsivity and detection speed. Here, we propose a graphene/PtSe₂/ultra-thin SiO₂/Si photodetector (PD) with multiple optimization mechanisms. Due to the fact that photo-generated carriers can travel in the graphene plane toward the Au electrode, the introduction of a top graphene contact with low sheet resistance provides a carrier collection path in the vertical direction and further restricts the carrier recombination behavior at the lateral grain boundary of PtSe₂ film. The ultra-thin SiO₂ passivation layer reduces the defects at the PtSe₂/Si heterojunction interface. As compared to the counterpart device without the graphene top contact, the responsivity, specific detectivity, and response speed of graphene/PtSe₂/ultra-thin SiO₂/Si PD under 808 nm illumination are improved to 0.572 A/W, 1.50 × 10¹¹ Jones, and 17.3/38.8 µs, respectively. The device can detect broad-spectrum optical signals as measured from 375 nm to 1550 nm under zero bias. The PD line array with 16-pixel units shows good near-infrared imaging ability at room temperature. Our study will provide guiding significance for how to improve the comprehensive properties of PDs based on 2D/Si heterostructure for practical applications. Full article

This study presents the fabrication and characterization of ZnO-MoS₂ heterostructure-based ultra-broadband photodetectors capable of operating across the ultraviolet (UV) to mid-infrared (MIR) spectral range (365 nm–10 μm). The p-n heterojunction was synthesized via RF magnetron sputtering and spin coating, followed by annealing. Structural and optical analyses confirmed their enhanced light absorption, efficient charge separation, and strong built-in electric field. The photodetectors exhibited light-controlled hysteresis in their I-V characteristics, attributed to charge trapping and interfacial effects, which could enable applications in optical memory and neuromorphic computing. The devices operated self-powered, with a peak responsivity at 940 nm, which increased significantly under an applied bias. The response and recovery times were measured at approximately 100 ms, demonstrating their fast operation. Density functional theory (DFT) simulations confirmed the type II band alignment, with a tunable bandgap that was reduced to 0.20 eV with Mo vacancies, extending the detection range. The ZnO-MoS₂ heterostructure’s broad spectral response, fast operation, and defect-engineered bandgap tunability highlight its potential for imaging, environmental monitoring, and IoT sensing. This work provides a cost-effective strategy for developing high-performance, ultra-broadband, flexible photodetectors, paving the way for advancements in optoelectronics and sensing technologies. Full article

The recent advancements in low-dimensional material-based photodetectors have provided valuable insights into the fundamental properties of these materials, the design of their device architectures, and the strategic engineering approaches that have facilitated their remarkable progress. This review work consolidates and provides a comprehensive review of the recent progress in group-10 two-dimensional (2D) palladium diselenide (PdSe₂)-based photodetectors. This work first offers a general overview of the various types of PdSe₂ photodetectors, including their operating mechanisms and key performance metrics. A detailed examination is then conducted on the physical properties of 2D PdSe₂ material and how these metrics, such as structural characteristics, optical anisotropy, carrier mobility, and bandgap, influence photodetector device performance and potential avenues for enhancement. Furthermore, the study delves into the current methods for synthesizing PdSe₂ material and constructing the corresponding photodetector devices. The documented device performances and application prospects are thoroughly discussed. Finally, this review speculates on the existing trends and future research opportunities in the field of 2D PdSe₂ photodetectors. Potential directions for continued advancement of these optoelectronic devices are proposed and forecasted. Full article

The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors. Full article

A novel broadband antenna designed for the terahertz (THz) frequency range is proposed and developed for the THz emitter on a photomixer chip. This THz emitter comprises an ultra-high-speed indium phosphide photodetector integrated with a planar THz antenna. This paper presents a novel broadband antenna configuration comprising a combination of bowtie and circular patch elements designed for the frequency range of 150 GHz to 500 GHz. Detailed parametric analysis of the antenna’s design parameters is also provided. The simulation results demonstrate that the optimized antenna achieves an impedance bandwidth of 350 GHz, satisfying the |S11| ≤ −10 dB condition, and exhibits a relative bandwidth of 107% within the 150 GHz to 500 GHz frequency range. This novel broadband terahertz antenna showcases an exceptional wideband performance and is highly suitable for high-speed transmission systems. Full article

This study experimentally demonstrates two types of ultra-broadband metamaterial absorbers with high performance in the visible-to-near-infrared range by using different anti-reflection coatings (i.e., SiO₂ and Si₃N₄) and a multi-subcell Ti-SiO₂-Ti metasurface. Compared to the bare metamaterial nanostructure, the absorption bandwidth of the coated metasurfaces exhibit increases of 594 nm and 1093 nm, respectively. Such improvements benefit from nearly perfect impedance matching to the free space enhanced by the anti-reflection coating, thin film interference, and excitations of different surface plasmon resonances. As a result, the absorber with SiO₂ coating exhibits a measured bandwidth with an absorption of 0.9 ranging from 502 nm to 1892 nm, while the absorber with Si₃N₄ coating further broadens the bandwidth from 561 nm to 2450 nm. The measured average absorptions for both cases remain above 95% and 87%, respectively. Moreover, both nanostructures are robust to large incident angles of up to 60° for both TE and TM modes. Our findings highlight the promising potential of these absorbers for various applications, including solar energy harvesting, thermal emitters, and photodetectors. Full article

Graphene is widely used in tunable photonic devices due to its numerous exotic and exceptional properties that are not found in conventional materials, such as high electron mobility, ultra-thin width, ease of integration and good tunability. In this paper, we propose a terahertz metamaterial absorber that is based on patterned graphene, which consists of stacked graphene disk layers, open ring graphene pattern layers and metal bottom layers, all separated by insulating dielectric layers. Simulation results showed that the designed absorber achieved almost perfect broadband absorption at 0.53–1.50 THz and exhibited polarization-insensitive and angle-insensitive characteristics. In addition, the absorption characteristics of the absorber can be adjusted by changing the Fermi energy of graphene and the geometrical parameters of the structure. The above results indicate that the designed absorber can be applied to photodetectors, photosensors and optoelectronic devices. Full article

Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected. Full article

Conventional electrodes in typical photodetectors only conduct electrical signals and introduce high optical reflection, impacting the optical-to-electrical conversion efficiency. The created surface solar harvester with a multi-functional folded electrode (MFFE) realizes both a three-dimensional Schottky junction with a larger light detecting area as well as low optical reflection from 300 nm (ultra-violet light) to 1100 nm (near-infrared light) broadly without an additional anti-reflection layer. The MFFE needs silicon etching following the lithography process. The metal silver was deposited over structured silicon, completing the whole device simply. According to the experimental results, the width ratio of the bottom side to the top side in MFFE was 15.75, and it showed an optical reflection of 5–7% within the major solar spectrum of AM1.5G by the gradient refractive index effect and the multi-scattering phenomenon simultaneously. While the perovskite materials were deposited over the MFFE structure of the solar harvester, the three-dimensional electrode with lower optical reflection benefitted the perovskite solar cell with a larger detecting area and an additional anti-reflection function to absorb solar energy more efficiently. In this concept, because of the thin stacked film in the perovskite solar cell, the solar energy could be harvested by the prepared Schottky junction of the solar harvester again, except for the optical absorption of the perovskite materials. Moreover, the perovskite materials deposited over the MFFE structure could not absorb near-infrared (NIR) energies to become transparent. The NIR light could be harvested by the light detecting junction of the solar harvester to generate effective photocurrent output additionally for extending the detection capability of perovskite solar cell further. In this work, the concept of integration of a conventional perovskite solar cell with a silicon-based solar harvester having an MFFE structure was proposed and is expected to harvest broadband light energies under low optical reflection and enhance the solar energy conversion efficiency. Full article

Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks. Full article

In recent years, using two-dimensional (2D) materials to realize broadband photodetection has become a promising area in optoelectronic devices. Here, we successfully synthesized SnSe nanosheets (NSs) by a facile tip ultra-sonication method in water-ethanol solvent which was eco-friendly. The carrier dynamics of SnSe NSs was systematically investigated via a femtosecond transient absorption spectroscopy in the visible wavelength regime and three decay components were clarified with delay time of τ₁ = 0.77 ps, τ₂ = 8.3 ps, and τ₃ = 316.5 ps, respectively, indicating their potential applications in ultrafast optics and optoelectronics. As a proof-of-concept, the photodetectors, which integrated SnSe NSs with monolayer graphene, show high photoresponsivities and excellent response speeds for different incident lasers. The maximum photo-responsivities for 405, 532, and 785 nm were 1.75 × 10⁴ A/W, 4.63 × 10³ A/W, and 1.52 × 10³ A/W, respectively. The photoresponse times were ~22.6 ms, 11.6 ms, and 9.7 ms. This behavior was due to the broadband light response of SnSe NSs and fast transportation of photocarriers between the monolayer graphene and SnSe NSs. Full article

This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (<Si bandgap (1.1 eV)) for long-wave near-infrared (LWNIR) absorption, respectively. According to the Raman spectra and large-area (16 × 16 μm²) Raman mapping, a low-defect, >95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 × 10³ cm²/V·s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of ~110 at ± 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (D*) is 8 × 10¹² cmHz^1/2/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is ~118/120 μs. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future. Full article

This paper describes a new class of light transducer-based poly (vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) (P(VDF-TrFE-CTFE)) terpolymer doped with 50% wt. phosphor particles that enables to efficiently transform light energy into an electrical signal. Broadband dielectric characterization together with experimental results on photo-electric conversion demonstrated high capacitance variation of the proposed composite under light exposure, confirming promising potential of our sensor device for application in retinal prostheses where the converted electrical signal can affect the biological activity of the neuron system. In addition to the benefit of being light-weight, having ultra-flexibility, and used in a simple process, the proposed photodetector composite leads to fast response and high sensibility in terms of photoelectrical coupling where significant increases in capacitance change of 78% and 25% have been recorded under blue and green light sources, respectively. These results demonstrated high-performance material design where phosphor filler contributes to promote charge-discharge efficiency as well as reduced dielectric loss in P(VDF-TrFE-CTFE), which facilitate the composite for flexible light transducer applications, especially in the medical environment. Full article

We theoretically proposed and numerically analyzed a polarization-independent, wide-angle, and ultra-broadband absorber based on a multi-layer metasurface. The numerical simulation results showed that the average absorption rates were more than 97.2% covering the broad wavelength of 400~6000 nm (from visible light to mid-infrared light) and an absorption peak was 99.99%, whatever the polarization angle was changed from 0° to 90°. Also, as the incidence angle was swept from 0° to 55°, the absorption performance had no apparent change over the wavelength ranges of 400 to 6000 nm. We proved that the proposed metasurface structure was obviously advantageous to achieve impedance matching between the absorber and the free space as compared with conventionally continuous planar-film structures. The broadband and high absorption resulted from the strong localized surface plasmon resonance and superposition of resonant frequencies. As expectable the proposed absorber structure will hold great potential in plasmonic light harvesting, photodetector applications, thermal emitters and infrared cloaking. Full article