Search Results (33)

AlGaN-based high-electron-mobility transistors are critical for next-generation power electronics and radio-frequency applications, yet achieving stable enhancement-mode operation with a high threshold voltage remains a key challenge. In this work, we designed p-AlGaN superlattices with different structures and performed energy band structure simulations using the device simulation software Silvaco. The results demonstrate that thin barrier structures lead to reduced acceptor incorporation, thereby decreasing the number of ionized acceptors, while facilitating vertical hole transport. Superlattice samples with varying periodic thicknesses were grown via metal-organic chemical vapor deposition, and their crystalline quality and electrical properties were characterized. The findings reveal that although gradient-thickness barriers contribute to enhancing hole concentration, the presence of thick barrier layers restricts hole tunneling and induces stronger scattering, ultimately increasing resistivity. In addition, we simulated the structure of the enhancement-mode HEMT with p-AlGaN as the under-gate material. Analysis of its energy band structure and channel carrier concentration indicates that adopting p-AlGaN superlattices as the under-gate material facilitates achieving a higher threshold voltage in enhancement-mode HEMT devices, which is crucial for improving device reliability and reducing power loss in practical applications such as electric vehicles. Full article

The reactions of radicals with human serum albumin (HSA) under reductive stress conditions were studied using pulse radiolysis and photochemical methods. It was proved that irradiation of HSA solutions under reductive stress conditions results in the formation of stable protein aggregates. HSA aggregates induced by ionizing radiation are characterized by unique emission, different from the UV emission of non-irradiated solutions. The comparison of transient absorption spectra and the reactivity of hydrated electrons ($e_{aq}^{-}$) with amino acids or HSA suggests that electron attachment to disulfide bonds is responsible for the transient spectrum recorded in the case of albumin solutions. The reactions of $e_{aq}^{-}$ and ${CO}_2^{•-}$ with HSA lead to the formation of the same products. Recombination of sulfur-centered radicals plays a crucial role in the generation of HSA nanoparticles, which are stabilized by intermolecular disulfide bonds. The process of creating disulfide bridges under the influence of ionizing radiation is a promising method for the synthesis of biocompatible protein nanostructures for medical applications. Our Raman spectroscopy studies indicate strong modification of disulfide bonds and confirm the aggregation of albumins as well. Low-temperature measurements indicate the possibility of electron tunneling through the HSA protein structure to specific CyS-SCy bridges. The current study showed that the efficiency of HSA aggregation depends on two main factors: dose rate (number of pulses per unit time in the case of pulse radiolysis) and the temperature of the irradiated solution. Full article

Laser machining by ultra-short (sub-ps) pulses at high intensity offers high precision, high throughput in terms of area or volume per unit time, and flexibility to adapt processing protocols to different materials on the same workpiece. Here, we consider the challenge of optimization for high throughput: how to use the maximum available laser power and larger focal spots for larger ablation volumes by implementing a fast scan. This implies the use of high-intensity pulses approaching ∼PW/cm² at the threshold where tunneling ionization starts to contribute to overall ionization. A custom laser micromachining setup was developed and built to enable high speed, large-area processing, and easy system reconfiguration for different tasks. The main components include the laser, stages, scanners, control system, and software. Machining of metals such as Cu, Al, or stainless steel and fused silica surfaces at high fluence and high exposure doses at high scan speeds up to 3 m/s were tested for the fluence scaling of ablation volume, which was found to be linear. The largest material removal rate was 10 mm³/min for Cu and 20 mm³/min for Al at the maximum power 80 W (25 J/cm² per pulse). Modified surfaces are color-classified for their appearance, which is dependent on surface roughness and chemical modification. Such color-coding can be used as a feedback parameter for industrial process control. Full article

Olive oil phenols are recognized as molecules with numerous positive health effects, many of which rely on their antioxidative activity, i.e., the ability to transfer hydrogen to radicals. Proton-coupled electron transfer reactions and hydrogen tunneling are ubiquitous in biological systems. Reactions of olive oil phenols, hydroxytyrosol, tyrosol, oleuropein, oleacein, oleocanthal, homovanillyl alcohol, vanillin, and a few phenolic acids with a DPPH• (2,2-diphenyl-1-picrylhydrazyl) radical in a 1,4-dioxane:water = 95:5 or 99:1 v/v solvent mixture were studied through an experimental kinetic analysis and computational chemistry calculations. The highest rate constants corresponding to the highest antioxidative activity are obtained for the ortho-diphenols hydroxytyrosol, oleuropein, and oleacein. The experimentally determined kinetic isotope effects (KIEs) for hydroxytyrosol, homovanillyl alcohol, and caffeic acid reactions are 16.0, 15.4, and 16.7, respectively. Based on these KIEs, thermodynamic activation parameters, and an intrinsic bond orbital (IBO) analysis along the IRC path calculations, we propose a proton-coupled electron transfer mechanism. The average local ionization energy and electron donor Fukui function obtained for the phenolic compounds show that the most reactive electron-donating sites are associated with π electrons above and below the aromatic ring, in support of the IBO analysis and proposed PCET reaction mechanism. Large KIEs and isotopic values of Arrhenius pre-exponential factor A_H/A_D determined for the hydroxytyrosol, homovanillyl alcohol, and caffeic acid reactions of 0.6, 1.3, and 0.3, respectively, reveal the involvement of hydrogen tunneling in the process. Full article

Light-duty vehicle emission regulations worldwide set limits for the following gaseous pollutants: carbon monoxide (CO), nitric oxides (NO_X), hydrocarbons (HCs), and/or non-methane hydrocarbons (NMHCs). Carbon dioxide (CO₂) is indirectly limited by fleet CO₂ or fuel consumption targets. Measurements are carried out at the dilution tunnel with “standard” laboratory-grade instruments following well-defined principles of operation: non-dispersive infrared (NDIR) analyzers for CO and CO₂, flame ionization detectors (FIDs) for hydrocarbons, and chemiluminescence analyzers (CLAs) or non-dispersive ultraviolet detectors (NDUVs) for NO_X. In the United States in 2012 and in China in 2020, with Stage 6, nitrous oxide (N₂O) was also included. Brazil is phasing in NH₃ in its regulation. Alternative instruments that can measure some or all these pollutants include Fourier transform infrared (FTIR)- and laser absorption spectroscopy (LAS)-based instruments. In the second category, quantum cascade laser (QCL) spectroscopy in the mid-infrared area or laser diode spectroscopy (LDS) in the near-infrared area, such as tunable diode laser absorption spectroscopy (TDLAS), are included. According to current regulations and technical specifications, NH₃ is the only component that has to be measured at the tailpipe to avoid ammonia losses due to its hydrophilic properties and adsorption on the transfer lines. There are not many studies that have evaluated such instruments, in particular those for “non-regulated” worldwide pollutants. For this reason, we compared laboratory-grade “standard” analyzers with FTIR- and TDLAS-based instruments measuring NH₃. One diesel and two gasoline vehicles at different ambient temperatures and with different test cycles produced emissions in a wide range. In general, the agreement among the instruments was very good (in most cases, within ±10%), confirming their suitability for the measurement of pollutants. Full article

Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promising properties, such as non-volatility, speed, and unlimited endurance. One of the important merits of STT-MRAM is its radiation hardness, thanks to its core component, a magnetic tunnel junction (MTJ), being capable of good function in an irradiated environment. This property makes MRAM attractive for space and nuclear technology applications. In this paper, a novel radiation-hardened triple modular redundancy (TMR) design for anti-radiation reinforcement is proposed based on the utilization of STT-MTJ devices. Simulation results demonstrate the radiation-hardened performance of the design. This shows improvements in the design’s robustness against ionizing radiation. Full article

It is well established that cells, tissues, and organisms exposed to low doses of ionizing radiation can induce effects in non-irradiated neighbors (non-targeted effects or NTE), but the mechanisms remain unclear. This is especially true of the initial steps leading to the release of signaling molecules contained in exosomes. Voltage-gated ion channels, photon emissions, and calcium fluxes are all involved but the precise sequence of events is not yet known. We identified what may be a quantum entanglement type of effect and this prompted us to consider whether aspects of quantum biology such as tunneling and entanglement may underlie the initial events leading to NTE. We review the field where it may be relevant to ionizing radiation processes. These include NTE, low-dose hyper-radiosensitivity, hormesis, and the adaptive response. Finally, we present a possible quantum biological-based model for NTE. Full article

The generation of highly charged ions in laser plasmas is usually associated with collisional ionization processes that occur in electron–ion collisions. An alternative ionization channel caused by tunnel ionization in an optical field is also capable of effectively producing highly charged ions with ionization potentials of several kiloelectronvolts when the laser intensity q > 10²⁰ W/cm². It is challenging to clearly distinguish the impacts of the optical field and collisional ionizations on the evolution of the charge state of a nonequilibrium plasma produced by the interaction of high-intensity, ultrashort PW-class laser pulses with dense matter. In the present work, it is shown that the answer to this question can be obtained in some cases by observing the X-ray spectral lines caused by the transition of an electron into the K-shell of highly charged ions. The time-dependent calculations of plasma kinetics show that this is possible, for example, if sufficiently small clusters targets with low-density background gas are irradiated. In the case of Ar plasma, the limit of the cluster radius was estimated to be R₀ = 0.1 μm. The calculation results for argon ions were compared with the results of the experiment at the J-KAREN-P laser facility at QST-KPSI. Full article

In this paper, we theoretically study the laser-induced modification of the vibrational parameters of a carbon dioxide molecule regarding its tunnel ionization. Our study predicts a 5% increase in the ionization rate in anti-Stokes channels that corresponds to pumping the ${\Sigma }_u$ mode up to $v_{ai}=10$. The molecule is imparted with an additional energy from the pre-pumped vibrational states, which is absorbed during ionization. As a result, the tunneling rate increases. This amplification of tunnel ionization of the CO${}_2$ gas target can potentially be used for the laser separation of carbon isotopes. Full article

Two series of (Gd, Y, Yb)₃Al₂Ga₃O₁₂ quintuple compounds with a garnet structure and solely doped with Ce and Tb were prepared in the form of ceramics by sintering in oxygen at 1600 °C for two hours and studied for the interaction of activator ions with ytterbium ions entering the matrix. It was shown that the photoluminescence and scintillation of Ce³⁺ ions are completely suppressed, predominantly by tunneling ionization through the charge transfer state (CTS) of the Ce⁴⁺-Yb²⁺ ions. The photoluminescence of Tb³⁺ ions is quenched in the presence of ytterbium, but not completely due to the poor resonance conditions of Tb³⁺ intraconfiguration transitions and the CTS of the single Yb³⁺ and the CTS of Ce⁴⁺-Yb²⁺ ions. The scintillation in the visible range of both Ce³⁺- and Tb³⁺-doped samples is intensely quenched as well, which indicates strong competition from Yb³⁺ ions to activators in interaction with the Gd substrate. Full article

A memristor is a new generation memory that merges dynamic random access memory and flash properties. In addition, it can be used in neuromorphic electronics. The advantage of silicon oxynitride, as an active memristor layer, over other dielectrics it is compatibility with silicon technology. It is expected that SiN_xO_y-based memristors will combine the advantages of memristors based on nonstoichiometric silicon oxides and silicon nitrides. In the present work, the plasma-enhanced chemical vapor deposition (PECVD) method was used to fabricate a silicon oxynitride-based memristor. The memristor leakage currents determine its power consumption. To minimize the power consumption, it is required to study the charge transport mechanism in the memristor in the high-resistance state and low-resistance state. The charge transport mechanism in the PECVD silicon oxynitride-based memristor in high and low resistance states cannot be described by the Schottky effect, thermally assisted tunneling model, Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, or the Shklovskii–Efros percolation model. The charge transport in the forming-free PECVD SiO_0.9N_0.6-based memristor in high and low resistance states is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined. For the high-resistance state, the trap ionization energy W is 0.35 eV, and the trap concentration N_d is 1.7 × 10¹⁹ cm⁻³; for the low-resistance state, the trap ionization energy W is 0.01 eV, and the trap concentration N_t is 4.6 × 10¹⁷ cm⁻³. Full article

Upon reentering the Earth’s atmosphere from space, a reentry vehicle becomes enshrouded in an ionization layer. This layer is known as the reentry plasma sheath and is caused by aerodynamic heating. Owing to the oscillation of charged particles in the reentry plasma sheath, the electromagnetic waves for communication between the vehicle and ground are attenuated. Analysis of the plasma density and attenuation of electromagnetic waves in a reentry plasma environment would require experimentation in an environment in which an actual aircraft reenters the atmosphere. Alternatively, an experiment in a large-scale plasma wind tunnel would be necessary. Unfortunately, these experiments would be extremely costly. Therefore, in this study, the reentry plasma was reproduced at laboratory scale using the hot refractory anode vacuum arc (HRAVA) method. In addition, the pressure in the vacuum chamber was used as a variable to probe the characteristics of the reentry plasma according to the altitude. The plasma density and attenuation of electromagnetic waves propagating through the plasma medium were measured using heterodyne interferometry and reflectometry capable of frequency analysis in the range of 10−35 GHz. The results confirmed that the plasma density and attenuation of the electromagnetic waves increased as the pressure in the vacuum chamber increased. Full article

The efficient generation of high-order harmonic radiation has been a challenging task since the early days of strong-field physics. An essential requirement to achieve efficient high-order harmonic generation inside a gas medium is the phase matching of the high-order harmonic radiation and the incident laser pulse. The dominant contribution to the wave–vector mismatch $\Delta k$ is associated with the ionization probability of the medium. In this work, we derive two analytical formulas to calculate the critical intensity of a general linearly polarized laser pulse that obey the phase-matching condition $\Delta k=0$. The analytic formulas are valid in the tunneling regime (ADK model) and the regime of the tunnel and multi-photon ionization (PPT model), respectively. We compare our results to numerical computations and discuss the scaling of the critical intensity depending on the pulse duration and the wavelength of a realistic incident laser pulse. The analytical approach demonstrated in this work is highly accurate and can compete with the existing numerical computational methods by an error of less than 1% and a decrease in the computation time of approximately 4 to 6 orders of magnitude. This enables complex theoretical studies of the efficiency scaling in HHG or to consider the effects of ground state depletion efficiently. Full article

In this work, the numerical simulation of a SiGe heterojunction bipolar transistor (HBT) for DC and AC performance operating at cryogenic temperature with a hydrodynamic carrier transport model is analyzed. A new modified temperature-dependent Si_1−xGe_x energy bandgap model was used. Using a simplified 2D TCAD design structure, the device characteristics on 55 nm SiGe HBT technology and the mobility model are calibrated with experimental data. Base current reversal due to induced impact-ionization at the collector-base junction is analyzed, where the estimated collector-emitter breakdown voltage with the base open (BV_CEO) is 1.48 V at 300 K. This reveals good voltage handling ability. At cryogenic temperatures, dopant incomplete ionization in the lightly doped collector region shows a 28% decrease in ionized dopant concentration at 50 K; this affects the base-collector depletion capacitance. The emitter electron barrier tunneling leakage on collector current is studied using a non-local e-barrier tunneling model at different temperatures that shows an improvement in peak DC gain at lower temperatures. Using the small-signal ac analysis, the cut-off frequency and the maximum oscillation frequency are extracted for high-frequency application, and the base widening effect is discussed. A comparison of this work with measured data on 90 nm SiGe HBT is also discussed in brief, which shows improvements in the simulated structure. Full article

The combined effect of total ionizing dose (TID) and electrical stress is investigated on NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage shift is smaller than those only bearing electrical stress, indicating that the combined effect alleviates the degradation of the devices. The H bond is broken during the radiation process, which reduces the participation of H atoms in the later stage of electrical stress, thereby reducing the degradation caused by electrical stress. The positive charges of the oxide layer generated by radiation neutralize part of the tunneling electrons caused by electrical stress, and consume some of the electrons that react with the H bond, resulting in weaker degradation. In addition, the positive charges in shallow trench isolation (STI) generated by radiation create parasitic leakage paths at the interfaces of STI/Si, which increase the leakage current and reduce the positive shift of the threshold voltage. The parasitic effect generated by the positive charges of STI makes the threshold voltage of the narrow-channel device degrade more, and due to the gate edge effect, the threshold voltage of short-channel devices degrades more. Full article