Search Results (34)

Aluminum nitride (AlN) thin films were deposited on SiO₂ substrates by RF-magnetron sputtering at varying powers (110–140 W) and subsequently subjected to thermal annealing at 450 °C under nitrogen atmosphere. A comprehensive multi-technique investigation—including X-ray reflectometry (XRR), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), optical profilometry, spectroscopic ellipsometry (SE), and electrical measurements—was performed to explore the physical structure, morphology, and optical and electrical properties of the films. The analysis of the film structure by XRR revealed that increasing sputtering power resulted in thicker, denser AlN layers, while thermal treatment promoted densification by reducing density gradients but also induced surface roughening and the formation of island-like morphologies. Optical studies confirmed excellent transparency (>80% transmittance in the near-infrared region) and demonstrated the tunability of the refractive index with sputtering power, critical for optoelectronic applications. The electrical characterization of Au/AlN/Al sandwich structures revealed a transition from Ohmic to trap-controlled space charge limited current (SCLC) behavior under forward bias—a transport mechanism frequently present in a material with very low mobility, such as AlN—while Schottky conduction dominated under reverse bias. The systematic correlation between deposition parameters, thermal treatment, and the resulting physical properties offers valuable pathways to engineer AlN thin films for next-generation optoelectronic and high-frequency device applications. Full article

Nickel (Ni) ultrathin films exhibit phase-dependent electrical, magnetic, and optical characteristics that are significantly influenced by deposition methods. However, these films are inherently prone to rapid oxidation, with the oxidation rate dependent on substrate, temperature, and deposition parameters. The focus of this research is to investigate the temporal oxidation of RF-sputtered Ni ultrathin films on Corning glass under ambient atmospheric conditions and its impact on their structural, surface, and optical characteristics. Controlled film thicknesses were achieved through precise manipulation of deposition parameters, enabling the analysis of oxidation-induced modifications. Atomic force microscopy (AFM) revealed that films with high structural integrity and surface uniformity are exhibiting roughness values (Rq) from 0.679 to 4.379 nm of corresponding thicknesses ranging from 4 to 85 nm. Scanning electron microscopy (SEM) validated the formation of Ni grains interspersed with NiO phases, facilitating SPR-like effects. UV-visible spectroscopy is demonstrating thickness-dependent spectral (plasmonic peak) shifts. Finite Difference Time Domain (FDTD) simulations corroborate the observed thickness-dependent optical absorbance and the resultant shifts in the absorbance-induced plasmonic peak position and bandgap. Increased NiO presence primarily drives the enhancement of electromagnetic (EM) field localization and the direct impact on power absorption efficiency, which are modulated by the tunability of the plasmonic peak position. Our work demonstrates that controlled fabrication conditions and optimal film thickness selection allow for accurate manipulation of the Ni oxidation process, significantly altering their optical properties. This enables the tailoring of these Ni films for applications in transparent conductive electrodes (TCEs), magneto-optic (MO) devices, spintronics, wear-resistant coatings, microelectronics, and photonics. Full article

This study presents the fabrication and characterization of ZnO-MoS₂ heterostructure-based ultra-broadband photodetectors capable of operating across the ultraviolet (UV) to mid-infrared (MIR) spectral range (365 nm–10 μm). The p-n heterojunction was synthesized via RF magnetron sputtering and spin coating, followed by annealing. Structural and optical analyses confirmed their enhanced light absorption, efficient charge separation, and strong built-in electric field. The photodetectors exhibited light-controlled hysteresis in their I-V characteristics, attributed to charge trapping and interfacial effects, which could enable applications in optical memory and neuromorphic computing. The devices operated self-powered, with a peak responsivity at 940 nm, which increased significantly under an applied bias. The response and recovery times were measured at approximately 100 ms, demonstrating their fast operation. Density functional theory (DFT) simulations confirmed the type II band alignment, with a tunable bandgap that was reduced to 0.20 eV with Mo vacancies, extending the detection range. The ZnO-MoS₂ heterostructure’s broad spectral response, fast operation, and defect-engineered bandgap tunability highlight its potential for imaging, environmental monitoring, and IoT sensing. This work provides a cost-effective strategy for developing high-performance, ultra-broadband, flexible photodetectors, paving the way for advancements in optoelectronics and sensing technologies. Full article

This paper presents an integrated tunable hybrid multi-laser module designed to simultaneously generate multiple radiofrequency (RF) local oscillator (LO) signals through optical heterodyning. The device consists of five hybrid InP/Si₃N₄ integrated lasers, each incorporating an intracavity wavelength-selective optical filter formed by two micro-ring resonators. Through beating the wavelengths generated from three of these lasers, we demonstrate the simultaneous generation of two LO signals within bands crucial for satellite communications (SatCom): one in the Ka-band and the other in the V-band. The device provides an extensive wavelength tuning range across the entire C-band and exhibits exceptionally narrow optical linewidths, below 40 kHz in free-running mode. This results in ultra-wideband tunable RF signals with narrow electrical linewidths below 100 kHz. The system is compact and highly scalable, with the potential to generate up to 10 simultaneous LO signals, being a promising solution for advanced RF signal generation in high throughput satellite payloads. Full article

Gallium oxide (Ga₂O₃) has gained considerable attention due to its wide bandgap, the availability of native substrates, and its excellent properties for solar-blind photodetectors, transparent electronics, and next-generation power devices. However, the expensive Ga₂O₃ native substrates have restricted its widespread adoption. To reduce costs and further the development of β-Ga₂O₃-based devices, there is a need for bandgap-tunable oxide films with high crystal quality for deep-ultraviolet (DUV) photodetectors and high-breakdown-field power devices. This study introduces a Thermal Interdiffusion Alloying method to address these requirements. It focuses on developing deep ultraviolet (DUV) photodetectors using β-Ga₂O₃ thin films on sapphire substrates by promoting the diffusion of aluminum (Al) atoms from the substrate into the film, resulting in the formation of aluminum gallium oxide (β-(Al_xGa_1−x)₂O₃). The aluminum content is controlled by adjusting the process temperature, allowing for tunable detection wavelengths and enhanced DUV sensing capabilities. Radio frequency (RF) sputtering optimizes the film’s quality by adjusting the sputtering power and the argon/oxygen (Ar/O₂) flow ratio. Material analysis indicates that this method expands the optical bandgap and shifts the response wavelength to 210 nm, significantly boosting the performance of the fabricated photodetectors. This research presents considerable potential for advancing DUV photodetectors across various disinfection applications. Full article

This study presents the fabrication and characterization of a dual-functional Pt/Ga₂O₃/Pt optoelectronic synaptic device, capable of operating as both a memristor and a memcapacitor. We detail the optimized radio frequency (RF) sputtering parameters, including a base pressure of 8.7 × 10⁻⁷ Torr, RF power of 100 W, working pressure of 3 mTorr, and the use of high-purity Ga₂O₃ and Pt targets. These precisely controlled conditions facilitated the formation of an amorphous Ga₂O₃ thin film, as confirmed by XRD and AFM analyses, which demonstrated notable optical and electrical properties, including light absorption properties in the visible spectrum. The device demonstrated distinct resistive and capacitive switching behaviors, with memory characteristics highly dependent on the wavelength of the applied light. Ultraviolet (365 nm) exposure facilitated long-term memory retention, while visible light (660 nm) supported short-term memory behavior. Paired-pulse facilitation (PPF) measurements revealed that capacitance showed slower decay rates than EPSC, suggesting a more stable memory performance due to the dynamics of carrier trapping and detrapping at the insulator interface. Learning simulations further highlighted the efficiency of these devices, with improved memory retention upon repeated exposure to UV light pulses. Visual encoding simulations on a 3 × 3 pixel array also demonstrated effective multi-level memory storage using varying light intensities. These findings suggest that Ga₂O₃-based memristor and memcapacitor devices have significant potential for neuromorphic applications, offering tunable memory performance across various wavelengths from ultraviolet to red. Full article

The demand for reconfigurable devices for emerging RF and microwave applications has been growing in recent years, with additive manufacturing and photonic thermal treatment presenting new possibilities to supplement conventional fabrication processes to meet this demand. In this paper, we present the realization and analysis of barium–strontium–titanate-(Ba_0.5Sr_0.5TiO₃)-based ferroelectric variable capacitors (varactors), which are additively deposited on top of conventionally fabricated interdigitated capacitors and enhanced by photonic thermal processing. The ferroelectric solution with suspended BST nanoparticles is deposited on the device using an ambient spray pyrolysis method and is sintered at low temperatures using photonic thermal processing by leveraging the high surface-to-volume ratio of the BST nanoparticles. The deposited film is qualitatively characterized using SEM imaging and XRD measurements, while the varactor devices are quantitatively characterized by using high-frequency RF measurements from 300 MHz to 10 GHz under an applied DC bias voltage ranging from 0 V to 50 V. We observe a maximum tunability of 60.6% at 1 GHz under an applied electric field of 25 kV/mm (25 V/μm). These results show promise for the implementation of photonic thermal processing and additive manufacturing as a means to integrate reconfigurable ferroelectric varactors in flexible electronics or tightly packaged on-chip applications, where a limited thermal budget hinders the conventional thermal processing. Full article

The proliferation of Internet of Things (IoT) devices, such as trackers and sensors, necessitates a delicate balance between device miniaturization and performance. This extends to the antenna system, which must be both efficient and multiband operational while fitting within space-constrained electronic enclosures. Traditional antennas, however, struggle to meet these miniaturization demands. Reconfigurable antennas have emerged as a promising solution for adapting their frequency, radiation pattern, or polarization in response to changing requirements, making them ideal for IoT applications. Among various reconfiguration techniques (electrical, mechanical, optical, and material-based), electrical reconfiguration reigns supreme for IoT applications. Its suitability for compact devices, cost-effectiveness, and relative simplicity make it the preferred choice. This paper reviews various approaches to realizing IoT reconfigurable antennas, with a focus on electrical reconfiguration techniques. It categorizes these techniques based on their implementation, including PIN diodes, digital tunable capacitors (DTCs), varactor diodes, and RF switches. It also explores the challenges associated with the development and characterization of IoT reconfigurable antennas, evaluates the strengths and limitations of existing methods, and identifies open challenges for future research. Importantly, the growing trend towards smaller IoT devices has led to the development of antenna boosters. These components, combined with advanced reconfiguration techniques, offer new opportunities for enhancing antenna performance while maintaining a compact footprint. Full article

We demonstrate a low latency delay of a radio frequency (RF)–linear frequency-modulated (LFM) pulse by modulating it onto optical carriers from a Kerr comb and sending the signal through a concatenation of off-the-shelf linearly chirped fiber Bragg gratings (LC-FBGs) and chirped-and-sampled FBG (CS-FBG). We characterize the frequency response and latency of the LC-FBG and CS-FBG. Then, experimentally, the LFM pulse performance is characterized by measuring the peak sidelobe level (PSL) at the output of the tunable delay system. The experiment, performed with an LFM pulse of 1 GHz bandwidth at a 10 GHz center frequency, shows a PSL better than 34.4 dB, attesting to the high quality of the buffer RF transfer function. Thus, the proposed optical memory buffer architecture, utilizing compact devices based on a Kerr comb and FBGs, offers several benefits for delaying LFM pulses, including (i) a larger tunable delay range, (ii) low latency, (iii) wide bandwidth, and (iv) high PSL. Full article

This study presents the design and simulation of an RF MEMS variable capacitor with a high tuning ratio and high linearity factor of capacitance–voltage response. An electrostatic torsion actuator with planar and non-planar structures is presented to obtain the high tuning ratio by avoiding the occurrence of pull-in point. In the proposed design, the capacitor plate is connected to the electrostatic actuators by using the s-shaped beam. The proposed design shows a 138% tuning ratio with the planar structure of the actuator and 167% tuning ratio by implementing the non-planar structure. A linearity factor of 99% is attained by adjusting the rates at which the capacitor plate rises as the actuation voltage increases and the rate at which the capacitance decreases as the plate rises. Parametric optimization of the design is performed by utilizing the finite element method (FEM) analysis and high-frequency structural simulator (HFSS) analysis to obtain an optimized high-tuning ratio RF MEMS varactor at low actuation voltage. S-parameters of the design are presented on HFSS, with a 50 ohm coplanar waveguide (CPW) serving as the transmission line. The proposed RF MEMS varactor can be utilized in tunable RF devices. Full article

This paper presents a frequency-reconfigurable dual-band radio frequency (RF) crossover based on quarter-wavelength coupled lines (CLs) and open stubs. Initially, an even–odd-mode analysis was conducted for the design, and closed-form equations were found. Then an advanced design system (ADS) was utilized to support and further optimize the theoretical analysis. Afterwards, high-frequency simulation software (HFSS) was used to simulate the proposed design. The proposed device is printed on a 1.524 mm RO4003C printed-circuit board (${\epsilon }_r=3.55)$. The frequency tunability is achieved by employing two varactor diodes connected to the open stubs. When the biasing voltage is altered, the capacitance of the SMV1405 varactor can change from 2.67 pF to 0.63 pF. Accordingly, the two operating frequencies can be continuously tuned from 2.06 GHz to 2.40 GHz and from 5.44 GHz to 5.84 GHz. For the low-frequency range, return loss and isolation are above 15 dB, and the insertion loss is less than 1.1 dB. As for the high-frequency range, the return loss is greater than 20 dB, the isolation is better than 15 dB, and the insertion loss is lower than 1.6 dB. The measurement results agreed well with the simulation results, and the crossover overall size is 45.5 mm $\times$ 29.4 mm. The proposed device can be utilized for various application areas, such as 5G smartphone applications and satellite communication. Full article

Electro-optic modulators (EOMs) are crucial devices for modern communication enabling high bandwidth optical communication links. Traveling wave electrodes are used to obtain high-speed modulation in these EOMs. We present the electrode design and analysis along with the study of effects of changing orientation on device performance for a thin-film lithium niobate tunable Mach–Zehnder interferometer (MZI) that offers sub-THz bandwidth operations. High velocity and impedance matching with low RF attenuation, high third-order SFDR (∼121 dB/Hz^2/3) and a low half-wave voltage length product (1.74 V.cm) have been achieved for a bandwidth of 136 GHz. High-speed digital modulation using multi-level signal formats (PAM-2, QAM-4 and QAM-16) with low BER for 400 Gbps data has been demonstrated to assess the digital performance of the device. Full article

Radio frequency energy harvesting (RFEH) is one form of renewable energy harvesting currently seeing widespread popularity because many wireless electronic devices can coordinate their communications via RFEH, especially in CMOS technology. For RFEH, the sensitivity of detecting low-power ambient RF signals is the utmost priority. The voltage boosting mechanisms at the input of the RFEH are typically applied to enhance its sensitivity. However, the bandwidth in which its sensitivity is maintained is very poor. This work implements a tunable voltage boosting (TVB) mechanism fully on-chip in a 3-stage cross-coupled differential drive rectifier (CCDD). The TVB is designed with an interleaved transformer architecture where the primary winding is implemented to the rectifier, while the secondary winding is connected to a MOSFET switch that tunes the inductance of the network. The TVB enables the sensitivity of the rectifier to be maintained at 1V DC output voltage with a minimum deviation of −2 dBm across a wide bandwidth of 3 to 6 GHz of 5G New Radio frequency (5GNR) bands. A DC output voltage of 1 V and a peak PCE of 83% at 3 GHz for −23 dBm input power are achieved. A PCE of more than 50% can be maintained at the sensitivity point of 1 V with the aid of TVB. The proposed CCDD-TVB mechanism enables the CMOS RFEH to be operated for wideband applications with optimum sensitivity, DC output voltage, and efficiency. Full article

Based on a dual-polarization dual-parallel Mach–Zehnder modulator (DP-DPMZM), an all-optical frequency divider is proposed and experimentally demonstrated. Two radio frequency (RF) signals are modulated on an optical carrier to work as a dual-beam master laser (ML). The optical signals of the ML are injected into a distributed feedback (DFB) laser to initiate the period-two (P2) state oscillation. By beating the output of the slave laser (SL) via circulator in a photodetector, a frequency divider with tunable factors can be achieved. The innovation of the scheme lies in having a simple structure and only requires optical devices, which is operated in wide RF frequency range without any electrical amplifiers before the photodetector to increase the conversion gain. Experiment results also demonstrate that the frequency division factors can be adjusted. Full article

U-shaped microwave resonators implemented by RF MEMS switches can be considered the result of a novel design approach for obtaining small-footprint tunable resonators, owing to the bent shape of the resonator and the microsystem solution for changing the frequency of resonance. In this paper, we discuss the design approach for potential configurations of U-shaped structures combined with ohmic RF MEMS switches. Owing to their prospective application in RADAR and satellite systems, the devices were assessed for K-Band operation, specifically for 15 GHz, 20 GHz, and 26 GHz. The ON-OFF states determined by an electrostatic actuation of metal beams composing the RF MEMS ohmic switches allow for selecting different path lengths corresponding to different frequencies. In this contribution, initial configurations were designed and manufactured as a proof-of-concept. The advantages and critical aspects of the designs are discussed in detail. Full article