Search Results (46)

The compatibility of low infrared emission and wideband microwave absorption has drawn extensive attention, both theoretically and practically. In this paper, an infrared–radar-compatible stealth metasurface is designed using transparent conductive materials, namely indium tin oxide (ITO) and poly methacrylimide (PMI). The designed structure is a combination of a radar-absorbing layer (RAL) and a low-infrared-emission layer (IRSL), with an overall thickness of about 1.7 mm. It consists of three layers, a top-layer patch-type ITO frequency-selective surface, an intermediate layer of a four-fold rotationally symmetric ITO patterned structure, and a bottom reflective surface. The layers are separated by PMI. Simulation results show that the structure achieves over 90% broadband absorption in the microwave band from 7 to 58 GHz and low emissivity of 0.36 in the infrared band. In addition, due to the four-fold rotationally symmetric design, the structure also exhibits polarization insensitivity and excellent angular stability. Therefore, the designed structure possesses ultra-broadband radar absorption performance, low infrared emissivity, and polarization-insensitive properties at a thin thickness, and has a promising application in the field of multi-band-compatible stealth technology. Full article

The ruins of the Imperial City of the Minyue Kingdom were an important site of the Minyue Kingdom during the Han Dynasty. Characteristic bronze arrowheads unearthed from the East Gate, with their exquisite craftsmanship, provide important physical evidence for studying ancient bronze casting technology and the military activities of that time. However, there is still a lack of systematic research on the alloy composition, casting process, and chemical stability of these arrowheads in long-term burial environments. The bronze arrowheads that were found in the East Gate warehouse are the subject of this study. Metallographic analysis, scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS) were used to carefully examine their composition and microstructure, as well as the casting process characteristics. The findings reveal the following: (1) The East Gate bronze arrowheads primarily consist of copper–tin binary alloys, and certain samples exhibit a lead (Pb) content of up to 11.19%, potentially due to element addition during casting or element migration in the burial environment. (2) The metallographic structure shows that the sample matrix has a typical α-dendrite structure, indicating that a high-temperature casting process was used, and then a certain surface treatment was performed to enhance corrosion resistance. (3) Under a scanning electron microscope, it was observed that a three-layer structure was formed on the surface of the arrowhead, including a fully mineralized layer, an intermediate transition layer, and the original core tissue. (4) The detection of molybdenum (Mo) in some samples suggests a close relationship between the complexity of the buried soil environment and human activities. (5) By comparing the microstructure and corrosion degree of the longitudinal section and the cross-section, it was found that the longitudinal section has a stronger corrosion resistance due to its denser structure. Comprehensive analysis shows that the technical details of the bronze arrowheads unearthed from the Minyue Imperial City in terms of material selection, casting process, and later use reflect the outstanding achievements of the Minyue Kingdom in the field of bronze manufacturing in the Han Dynasty. Full article

A new approach for the thermal reduction of tin dioxide (SnO₂) in the carbon/sodium sulfite (Na₂SO₃) system is demonstrated. The process of tin smelting was experimentally optimized by adjusting the smelting temperature and amounts of the chemical components used for the thermal reduction of SnO₂. The numbers obtained are consistent with the thermodynamic characteristics of the system and molar fractions of reactants derived from the proposed mechanism of the SnO₂ thermal reduction process. They reveal that the maximum yield of tin is obtained if masses of C, Na₂SO₃ and SnO₂ are approximately in the ratio 1:2:3 and the temperature is set to 1050 °C. The key role in the suggested mechanism is the thermal decomposition of Na₂SO₃. It was deduced from the available experimental data that the produced sulfur dioxide undergoes carbothermic reduction to carbonyl sulfide—an intermediate product involved in the bulk reduction of SnO₂. Replacing sodium sulfite with sodium sulfate, sodium sulfide and even elemental sulfur practically terminated the production of metallic tin. The kinetic analysis was focused on the determination of the reaction orders for the two crucial reactants involved in the smelting process. Full article

Aftermarket additives are used to enhance the performance of internal combustion engines in specific aspects such as reducing wear, increasing power, and improving fuel economy. Despite their advantages, they can sometimes cause corrosion-related problems. This research evaluated the corrosiveness of four aftermarket additives on the corrosion of a high-leaded tin bronze alloy over 28 days at 80 °C in immersion tests. Among the evaluated products, three showed corrosive effects ranging from intermediate to severe. Notably, the visual appearance of the surfaces often did not indicate the underlying corrosive damage. Therefore, the assessment of corrosiveness was based on chemical characterizations conducted on both the drained oils and the bronze surfaces. The study found minimal oil degradation under the testing conditions, indicating that the primary cause of corrosion was the interaction between the specific additives and the metal elements of the alloy, rather than oil degradation itself. A direct correlation was observed between the dissolution of lead and copper and the adsorption of S and Cl-containing additives on the surfaces, respectively. The corrosive impact of Cl-containing additives in aftermarket formulations was significantly reduced when mixed with engine oil SAE 10W-30 (at a 25:1 ratio), suggesting a mitigated effect in combined formulations, which is the recommended usage for engines. Full article

Vertical Schottky barrier diodes based on an ion beam sputter (IBS)-deposited β-Ga₂O₃ film on a single-crystalline ($\overline{2}$01) unintentionally doped (UID) β-Ga₂O₃ with a Ni contact were developed. To form ohmic Ti/Ni contacts, the IBS-Ga₂O₃/UID β-Ga₂O₃ structures were wet-etched, and an indium tin oxide (ITO) intermediate semiconductor layer (ISL) was deposited on the opposite surface of the UID β-Ga₂O₃. The IBS-deposited Ga₂O₃ layer was polycrystalline and semi-insulating. Low leakage currents, rectification ratios of 3.9 × 10⁸ arb. un. and 3.4 × 10⁶ arb. un., ideality factors of 1.43 and 1.24, Schottky barrier heights of 1.80 eV and 1.67 eV as well as breakdown voltages of 134 V and 180 V were achieved for diodes without and with ITO-ISL, respectively. The surface area of the IBS-Ga₂O₃ film acted as a thin dielectric layer and, together with the preliminary wet etching, provided low leakage currents and relatively high Schottky barrier heights. Diodes with a Schottky barrier based on a Ni/IBS-deposited Ga₂O₃ film contact were demonstrated for the first time. Full article

This study intended to fabricate a novel Fenton-like catalyst by supporting the rod-like MIL-88A and the magnetic tin ferrite nanoparticles (SnFe₂O₄) on the MXene sheets (MIL-88A/SnFe₂O₄@MXene). The well fabrication and determination of the MIL-88A/SnFe₂O₄@MXene properties were investigated using SEM, XPS, VSM, Zeta potential, XRD, and FTIR tools. The Fenton-like degradation reaction of CR by MIL-88A/SnFe₂O₄@MXene was thoroughly studied to identify the optimal proportions of the catalyst components, the impact of CR and H₂O₂ concentrations, as well as the effect of raising the temperature and the pH medium of the catalytic system and the catalyst dosage. Kinetics studies were executed to analyze the decomposition of CR and H₂O₂ using First-order and Second-order models. Furthermore, the degradation mechanism was proposed based on the scavenging test that proceeded in the presence of chloroform and t-butanol, in addition to the XPS analysis that clarified the participation of the containing metal species: Fe, Sn, and Ti, and the formation of a continual redox cycle. The obtained intermediates during the CR degradation were defined by GC–MS. A recyclability test was performed on MIL-88A/SnFe₂O₄@MXene during five runs of the Fenton-like degradation of CR molecules. Finally, the novel MIL-88A/SnFe₂O₄@MXene Fenton-like catalyst could be recommended as a propitious heterogeneous catalyst with a continuous redox cycle and a recyclability merit. Full article

Replacing expensive platinum oxygen reduction reaction (ORR) catalysts with atomically dispersed single-atom catalysts is an effective way to improve the energy conversion efficiency of fuel cells. Herein, a series of single-atom catalysts, TM-N₂O₂C_x (TM=Sc-Zn) with TM-N₂O₂ active units, were designed, and their catalytic performance for electrocatalytic O₂ reduction was investigated based on density functional theory. The results show that TM-N₂O₂C_x exhibits excellent catalytic activity and stability in acidic media. The eight catalysts (TM=Sc, Ti, V, Cr, Mn, Fe, Co, and Ni) are all 4e⁻ reaction paths, among which Sc-N₂O₂C_x, Ti-N₂O₂C_x, and V-N₂O₂C_x follow dissociative mechanisms and the rest are consistent with associative mechanisms. In particular, Co-N₂O₂C_x and Ni-N₂O₂C_x enable a smooth reduction in O₂ at small overpotentials (0.44 V and 0.49 V, respectively). Furthermore, a linear relationship between the adsorption free energies of the ORR oxygen-containing intermediates was evident, leading to the development of a volcano plot for the purpose of screening exceptional catalysts for ORR. This research will offer a novel strategy for the design and fabrication of exceptionally efficient non-precious metal catalysts on an atomic scale. Full article

Quasi-equilibrium directional crystallization was performed on a melt composition (at. %): 18.50 Cu, 32.50 Fe, 48.73 S, 0.03 Pt, Pd, Ag, Au, Te, As, Bi, Sb, and Sn, which closely resembles the Cu-rich massive ores found in the platinum-copper-nickel deposits of Norilsk. Base metal sulfides (BMS) such as pyrrhotite solid solution (Fe,Cu)S_1±δ (Poss), non-stoichiometric cubanite Cu_1.1Fe_1.9S₃ (Cbn*), and intermediate solid solution Cu_1.0Fe_1.2S_2.0 (Iss) are progressively precipitated from the melt during the crystallization process. The content of noble metals and semimetals in the structure of BMS is below the detection limit of SEM-EDS analysis. Only tin exhibits significant solubility in Cbn* and Iss, meanwhile Pt, Pd, Au, Ag, As, Bi, Sb, and Te are present as discrete composite inclusions, comprising up to 11 individual phases, within their matrices. These microphases correspond to native Au, native Bi, hessite Ag₂Te, sperrylite Pt(As,S)₂, hedleyite Bi₂Te, michenerite PdTeBi, froodite PdBi₂, a solid solution of sudburite-sobolevskite-kotulskite Pd(Sb, Bi)_xTe_1−x, geversite PtSb₂, and a multicomponent solid solution based on geversite Me(TABS)₂, where Me = Σ(Pt, Pd, Fe, Cu) and TABS = Σ(Te, As, Bi, Sb, Sn). Most of the inclusions occur as thin layers between BMS grain boundaries or appear drop-shaped and subhedral to isometric grains within the sulfide matrix. Only a small fraction of the trace elements form mineral inclusions of sizes ≤ 0.5 μm in Poss, most likely including PtAs₂ and (Pt,Pd)S. It is likely that the simultaneous presence of noble metals (Pt, Pd, Au, Ag) and semimetals (As, Te, Bi, Sb) in the sulfide melt leads to the appearance of liquid droplets in the parent sulfide melt after pyrrhotite crystallization. The solidification of droplets during the early stages of Cbn* crystallization may occur simultaneously with the cooling of later fractions of the sulfide melt, resulting in the formation of Iss. In addition, abundant gas voids containing micro-inclusions were observed in Cbn* and Iss. These inclusions showed similar chemical and mineral compositions to those in BMS matrices, i.e., the presence of gas bubbles did not affect the main features of noble metal fractionation and evolution. Therefore, it is reasonable to assume that ore particles suspended in the melt are either trapped by defects at the crystallization front or transported towards gas bubbles via the Marangoni effect. Full article

Yttrium oxide (Y₂O₃) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage forming process. The effect of current compliance on the Y₂O₃ RRAM devices was investigated, and the results revealed that the resistance values gradually decreased with increasing set current compliance values. By regulating these values, the formation of pure Ag conductive filament could be restricted. The dominant oxygen ion diffusion and migration within Y₂O₃ leads to the formation of oxygen vacancies and Ag metal-mixed conductive filaments between the two electrodes. The filament composition changes from pure Ag metal to Ag metal mixed with oxygen vacancies, which is crucial for realizing multilevel cell (MLC) switching. Consequently, intermediate resistance values were obtained, which were suitable for MLC switching. The fabricated Y₂O₃ RRAM devices could function as a MLC with a capacity of two bits in one cell, utilizing three low-resistance states and one common high-resistance state. The potential of the Y₂O₃ RRAM devices for neural networks was further explored through numerical simulations. Hardware neural networks based on the Y₂O₃ RRAM devices demonstrated effective digit image classification with a high accuracy rate of approximately 88%, comparable to the ideal software-based classification (~92%). This indicates that the proposed RRAM can be utilized as a memory component in practical neuromorphic systems. Full article

The interface models of diamond-coated WC-Co cemented carbide (DCCC) were constructed without intermediate layers and with different interface terminals, such as intermediate layers of TiC, TiN, CrN, and SiC. The adhesion work of the interface model was calculated based on the first principle. The results show that the adhesion work of the interface was increased after adding four intermediate layers. Their effect on improving the interface adhesion performance of cemented carbide coated with diamond was ranked in descending order as follows: SiC > CrN > TiC > TiN. The charge density difference and the density of states were further analyzed. After adding the intermediate layer, the charge distribution at the interface junction was changed, and the electron cloud at the interface junction overlapped to form a more stable chemical bond. Additionally, after adding the intermediate layer, the density of states of the atoms at the interface increased in the energy overlapping area. The formant formed between the electronic orbitals enhances the bond strength. Thus, the interface bonding performance of DCCC was enhanced. Among them, the most obvious was the interatomic electron cloud overlapping at the diamond/SiC_C-Si/WC-Co interface, its bond length was the shortest (1.62 Å), the energy region forming the resonance peak was the largest (−5–20 eV), and the bonding was the strongest. The interatomic bond length at the diamond/TiN_Ti/WC-Co interface was the longest (4.11 Å), the energy region forming the resonance peak was the smallest (−5–16 eV), and the bonding was the weakest. Comprehensively considering four kinds of intermediate layers, the best intermediate layer for improving the interface bonding performance of DCCC was SiC, and the worst was TiN. Full article

SiO₂ films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO₂ films. On the top of the graphene layer, either continuous HfO₂ or SiO₂ films were grown by plasma-assisted atomic layer deposition or by electron beam evaporation, respectively. Micro-Raman spectroscopy confirmed the integrity of the graphene after the deposition processes of both the HfO₂ and SiO₂. Stacked nanostructures with graphene layers intermediating the SiO₂ and either the SiO₂ or HfO₂ insulator layers were devised as the resistive switching media between the top Ti and bottom TiN electrodes. The behavior of the devices was studied comparatively with and without graphene interlayers. The switching processes were attained in the devices supplied with graphene interlayers, whereas in the media consisting of the SiO₂-HfO₂ double layers only, the switching effect was not observed. In addition, the endurance characteristics were improved after the insertion of graphene between the wide band gap dielectric layers. Pre-annealing the Si/TiN/SiO₂ substrates before transferring the graphene further improved the performance. Full article

Nonstoichiometric GeSi_xO_y glass films and many-layer structures based on them were obtained by high-vacuum electron beam vapor deposition (EBVD). Using EBVD, the GeO₂, SiO, SiO₂, or Ge powders were co-evaporated and deposited onto a cold (100 °C) p⁺-Si(001) substrate with resistivity ρ = 0.0016 ± 0.0001 Ohm·cm. The as-deposited samples were studied by Fourier-transformed infrared spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. A transparent indium–tin–oxide (ITO) contact was deposited as the top electrode, and memristor metal–insulator–semiconductor (MIS) structures were fabricated. The current–voltage characteristics (I–V), as well as the resistive switching cycles of the MIS, have been studied. Reversible resistive switching (memristor effect) was observed for one-layer GeSi_0.9O_2.8, two-layer GeSi_0.9O_1.8/GeSi_0.9O_2.8 and GeSi_0.9O_1.8/SiO, and three-layer SiO₂/a–Ge/GeSi_0.9O_2.8 MIS structures. For a one-layer MIS structure, the number of rewriting cycles reached several thousand, while the memory window (the ratio of currents in the ON and OFF states) remained at 1–2 orders of magnitude. Intermediate resistance states were observed in many-layer structures. These states may be promising for use in multi-bit memristors and for simulating neural networks. In the three-layer MIS structure, resistive switching took place quite smoothly, and hysteresis was observed in the I–V characteristics; such a structure can be used as an “analog” memristor. Full article

Iron oxide and silica nanoparticles were individually incorporated in tin-based Babbitt alloy and combined to prepare a novel class of nanocomposites for bearing material applications. The route of liquid metallurgy in combination with the stirring technique was adopted to manufacture nanocomposites. Microstructural evolution and mechanical property evaluation were performed by optical and electron microscopy, EDS, hardness, compression, and wear tests. The morphology of the Cu₆Sn₅ phase was changed from elongated to spherical in the microstructures of nanocomposites. The solitary addition of 0.5 wt% iron oxide nanoparticles improved the hardness and compressive strength but adversely affected the wear properties by increasing the weight loss and friction coefficient value. In contrast, the addition of 0.5 wt% silica nanoparticles could not significantly increase the hardness and compressive strength but it could improve the tribological properties by reducing the weight loss and friction coefficient value. Tin-based Babbitt alloy showed a compressive strength of 89.22 ± 0.50 MPa after the addition of 0.5 wt% iron oxide showing a rise of ~11%. The combined effect of the addition of both types of nanoparticles showed considerable results, i.e., a rise of ~7.9% (86.75 ± 0.68 MPa). The balanced approach of incorporating dual reinforcements of 0.25 wt% iron oxide and 0.25 wt% silica nanoparticles intermediately improved the hardness, compressive strength, and decreased weight loss. Full article

Li-F granites from the Kester deposit (Yana Plateau in Yakutia, Russia) are proved to be connected with a rare-metal complex of accessory minerals: montebrasite, columbite-(Mn), columbite-(Fe), tantalite-(Mn), Ta-bearing cassiterite, U-bearing microlite, W-bearing ixiolite, niobian ferberite, U–Hf-rich zircon, and Ta-bearing rutile. Accessory wodginite was discovered at depths of up to 150 m in association with tantalite-(Mn), columbite-(Mn), and cassiterite. According to the content of WO₃ (1.23%–3.33%) and the values of Mn/(Mn + Fe_t) and Ta/(Ta + Nb), Yakut wodginite is an intermediate mineral between wodginite and a hypothetical mineral of the wodginite group—”wolframowodginite”. The discovery of tungsten-bearing wodginite at the Kester deposit confirms the widespread presence of tungstic and tungsten-bearing accessory minerals in Li-F granites in the Russian Far East. It also serves as an indicator of rare-metal tin-tantalum-bearing granites and pegmatites. Full article

Herein, we report the structural characterization and vibrational and physical properties of Cu₂ZnSn_1−xSi_xSe₄ solid solutions synthesized using the ceramic method. X-ray diffraction analysis and Rietveld analysis of the samples indicated that by increasing the x value from 0 to 0.8, the volume of the unit cell decreased because the ionic radius of silicon is smaller than that of tin. Simultaneously, a phase transition between stannite and wurtz-stannite was observed. The Raman peaks were analyzed by fitting the spectra to identify the vibrational modes by comparison with the experimental data from Cu₂ZnSnSe₄ and Cu₂ZnSiSe₄. The spectra of Cu₂Zn(Sn_1−xSi_x)Se₄ (x = 0.2 and 0.3) show two dominant peaks at approximately 172 and 195 cm⁻¹, which are assigned to the A1 mode of the stannite structure. The optical band gaps for Cu₂Zn(Sn_0.8Si_0.2)Se₄ and Cu₂Zn(Sn_0.2Si_0.8)Se₄ were 1.30 and 1.74 eV, respectively. These values were intermediate to those of the end members. Electrical properties of Cu₂Zn(Sn_0.8Si_0.2)Se₄ revealed p-type conductivity behavior with a carrier concentration of approximately ~+3.50 × 10⁻¹⁹ cm⁻³ and electrical mobility of 2.64 cm²/V·s. Full article