Search Results (159)

Group III-nitride semiconductors (GaN, AlN, InN) serve as foundational materials for modern optoelectronics, high-frequency microelectronics, and next-generation energy harvesting devices. However, traditional high-temperature epitaxy (>700 °C) introduces severe thermal stress, high dislocation densities, and fundamental incompatibility with flexible substrates or CMOS back-end-of-line (BEOL) processes. Plasma-enhanced atomic layer deposition (PEALD) provides a disruptive, ultra-low thermal budget (<300 °C) pathway for atomic-scale precision growth and conformal coating. This review systematically summarizes recent frontiers in PEALD-synthesized Group III-nitrides and 2D/3D polar heterostructures. First, we dissect the microscopic nucleation kinetics, surface bond reconstruction, and impurity suppression mechanisms across diverse substrates, including Si, sapphire, quartz, metals, and flexible polymers. Next, we highlight 2D template-assisted van der Waals epitaxy on graphene and MoS2, and elucidate polarization-driven dipole interactions and band alignment engineering at 2D/3D polar interfaces (e.g., α-In₂Se₃, Janus MoSSe). Furthermore, we comprehensively discuss innovative applications in advanced photovoltaics (as electron transport and passivation layers in perovskite and quantum dot-sensitized solar cells), silicon-based microcavity lasers, high-electron-mobility transistors (HEMTs), and flexible multimodal sensors. Finally, key technological challenges—including the low-thermal-budget paradox, wafer-scale uniformity, and deposition throughput—are addressed alongside future perspectives in area-selective ALD and neuromorphic computing, presenting a cohesive blueprint from underlying physics to macroscopic system integration. Full article

This article reviews the reactive magnetron sputtering of piezoelectric Aluminium Nitride (AlN) thin films, with a focus on process parameter optimisation and system-level deposition challenges. AlN is a leading material for MEMS and RF applications owing to its c-axis (002) orientation, high acoustic velocity, wide bandgap (∼6.2 eV), and CMOS compatibility. We review the influence of sputtering power, nitrogen flow ratio, substrate temperature, and target-to-substrate distance on crystallographic quality and document practical hardware challenges, including vacuum leakage, grounding faults, target erosion, and mass flow controller drift, that critically affect reproducibility but are systematically underreported in the literature. A perspective is provided on emerging application domains where optimised AlN films address current performance gaps, including next-generation RF/telecom systems towards 6G and Future Networks, harsh environment sensing and actuation, biomedical ultrasound, and IoT energy harvesting. The complementarity between AlN and Silicon Carbide (SiC) is discussed for high-temperature, high-power, and radiation-hard MEMS, where AlN/SiC heterostructures combine the piezoelectric activity of AlN with the mechanical and chemical robustness of SiC. It also incorporates a discussion of dopant- and heteroepitaxy-based AlN engineering, AlN deposition on a wider range of substrates, the role of seed and electrode underlayers, and pulsed-DC sputtering as a third power supply mode alongside RF and conventional DC. Full article

This study explores the direct growth of boron-doped diamond films on biocompatible silicon nitride (Si₃N₄) ceramic substrates using hot-filament chemical vapor deposition (HFCVD), with a view toward their use in implantable electrochemical biosensors. The focus of this work is the establishment of process–structure–property relationships relevant to biosensor performance, including microstructure, surface chemistry, wettability, and electrical behaviour. The effects of key deposition parameters, namely methane concentration, deposition pressure, and sample holder configuration, were analysed in relation to film microstructure, crystallographic orientation, surface chemistry, wettability, and electrical performance. Under low CH₄/H₂ ratios, microcrystalline diamond films with a pronounced (111) preferential orientation were obtained, enabling improved boron incorporation and electrical resistivity values within the range required for biosensor operation (≈1–10 kΩ). Surface analyses revealed partially hydrogen-terminated diamond layers enriched with oxygen-containing functional groups (C–O and C–O–C), which enhance surface wettability and are suitable for enzyme immobilization. Among the studied conditions, films deposited at 150 mbar and low methane flow displayed the most balanced combination of electrical conductivity, surface wettability, and microstructural stability. Overall, the results highlight the potential of boron-doped CVD diamond grown directly on Si₃N₄ as a robust and biocompatible material platform for future implantable biosensors, particularly for glucose monitoring applications. Full article

The integration of advanced semiconductor architectures strictly mandates process thermal budgets below 200 °C, positioning low-temperature PECVD of silicon nitride (SiN_x) film as a critical layer. However, SiN_x film deposited at sub-200 °C inherently exhibits sluggish deposition kinetics and degraded spatial uniformity. To overcome these bottlenecks, this study systematically investigates the regulatory mechanisms of the NH₃ precursor within SiH₄/N₂-based plasmas under varying chamber pressures and substrate temperatures. The results show that the introduction of NH₃ at 2.1 Torr, leveraging its facile plasma dissociation, drastically enhances the deposition rate from 18.2 to 39.1 Å/s and improves thickness uniformity by 1.07%. Meanwhile, NH₃ supplies abundant highly reactive radicals that elevate the refractive index and reinforce compressive stress. Furthermore, film properties exhibit a higher sensitivity to pressure than to temperature, primarily due to the pronounced influence of pressure on plasma dynamics and collision frequencies, whereas the effect of temperature remains comparatively minor. This phenomenon is clearly demonstrated by the Si–H and N–H content. This study validates that operating at low chamber pressures maximizes the collision-free travel distance of SiN_x radicals, providing an optimized and quantified process window for high-volume manufacturing of low-temperature SiN_x film. Full article

An Al₂O₃/AlN stack deposited via Atomic Layer Deposition (ALD) methods as a gate insulator for silicon carbide (4H-SiC) has been investigated, focusing on the effects of different Al₂O₃ deposition processes on the nitride layer. In particular, dielectric stacks, consisting of a 10 nm AlN interface (001)-oriented layer directly grown on a 4H–SiC substrate and in 20 nm of additional amorphous Al₂O₃ layers were synthesized in sequential deposition runs by thermal ALD (T-ALD) or plasma-enhanced ALD (PEALD) methods. The evolution of the phenomena occurring at the Al₂O₃/AlN interfaces has been established by in situ ellipsometry measurements. Strong effects of the oxygen plasma because of the O-Al-N bond formation have been clearly observed and corroborated by ex situ structural and electrical characterizations, especially in the case of the plasma-enhanced Al₂O₃ process. In particular, the Al₂O₃/AlN bilayer grown by the Al₂O₃ T-ALD method exhibited good insulating behavior and an 8.7-high dielectric constant was measured. By contrast, the Al₂O₃/AlN bilayer grown by the Al₂O₃ PEALD method demonstrated poor insulating properties. Full article

Conventional photodetectors and image sensors deliver high-fidelity digital outputs but face a growing data-movement bottleneck: the energy and latency cost of transferring raw pixel streams to off-chip memory and processors increasingly dominates over both sensing and computation in modern machine-vision pipelines. An emerging response is the neuromorphic photodetector, a class of optoelectronic device that converts incident light into an electrical signal while simultaneously storing, modulating, and pre-processing that signal in a manner inspired by biological synapses and retinas. Over the past decade, demonstrations have spanned at least eight material platforms—organic semiconductors, organic–carbon-nanotube hybrids, perovskite and perovskite hybrids, metal oxides (including ultra-wide-bandgap and printable variants), wide-bandgap III-nitrides and 4H-SiC, two-dimensional materials, photo-memristors, and silicon CMOS in-sensor compute architectures—and have been realised through four distinct architectural families: phototransistor synapses, photo-memristors, heterojunction in-sensor compute, and linear photovoltaic neural networks. Here, we provide a quantitative cross-platform benchmark across forty in-scope articles, identify persistent photoconductivity as a near-universal device-physical substrate underlying synaptic functionality, characterise the responsivity–speed–energy trade-off structure observed across platforms, and present a critical assessment of energy-reporting practice in the field. We further identify three best-practice exemplars from three independent material platforms that converge on operating biases of 0.01–0.1 V and energies of 0.07–0.8 fJ per event, and we propose a unified reporting framework to enable meaningful cross-platform benchmarking of next-generation neuromorphic photodetectors. Full article

Sintering additives play a decisive role in the densification behavior, mechanical properties, and thermal conductivity of silicon nitride ceramics. In this study, Mg₂Si and YH₂ were used as sintering additives for gas pressure sintering of silicon nitride based on the synergistic mechanism of “silicide silicon extraction-hydride dehydrogenation”. The regulation rules of the additives on ceramic densification, mechanical properties, and thermal conductivity were systematically investigated. Two optimization strategies were proposed for the technical route of replacing traditional oxide additives with non-oxide systems. (i) Rare-earth hydride YH₂ was used to replace traditional rare-earth oxides. It reacts with SiO₂ to achieve strong deoxidation and precisely regulate the liquid phase composition. (ii) Metal silicide Mg₂Si was used to replace metal oxides. It promotes the preferred growth of β-Si₃N₄ grains, consumes oxygen in the system, and reduces lattice defects. Mg₂Si introduces Si into the liquid phase, increasing the Si/O ratio, which lowers lattice oxygen content and supports higher thermal conductivity. YH₂ consumes SiO₂ on the Si₃N₄ surface, which reduces liquid phase oxygen content and inhibits lattice oxygen incorporation, promoting a liquid phase with a high N/O ratio. Compared with traditional Y₂O₃, YH₂ increases the Y₂O₃/SiO₂ ratio in the liquid phase. It promotes grain growth, reduces SiO₂ activity, and further improves the thermal conductivity of ceramics. Silicon nitride ceramics prepared by gas pressure sintering at 1750 °C with 3 wt.% Mg₂Si and 4 wt.% YH₂ composite additives exhibit the highest thermal conductivity of 87 W/(m·K), with a Vickers hardness of 14.36 GPa and a flexural strength of 643.15 MPa. This study provides an innovative idea for the preparation of high-performance silicon nitride heat dissipation substrates. Full article

With the growing need for high-power density, high-efficiency power electronics, wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), have been widely used in recent years. With high switching speed, stray inductance induced by packaging would cause voltage overshooting and oscillation during the switching transient, which should be mitigated at all costs. In this paper, a power module design based on a multilayer insulated metal substrate (MIMS) structure was proposed to effectively address the stray inductance concern based on the mutual-inductance cancelling effect. Fabrication process flow with high feasibility was also designed. Electrical and thermal simulations were conducted based on a power module with a nominal rating of 1200 V and 500 A. Compared to the planar module, the proposed design possessed much lower stray inductance (3.47 nH vs. 14.85 nH). In the transient thermal simulation, the proposed module exhibited a time constant 141.7% higher than that of the hybrid module with a ceramic substrate on the bottom but MIMS on the top, making it suitable for applications with high-constant power output requirements. Full article

To address the lack of suitable glass systems for silicon nitride (Si₃N₄) surface metallization, which requires high wettability and thermal stability, and robust bonding between the copper layer and the ceramic substrate, a novel Bi₂O₃-TeO₂-B₂O₃-CuO glass system was developed. This study systematically investigated the influence of Bi₂O₃ concentration, glass properties, optimized paste composition, and brazing mechanism using phase analysis, microstructural characterization, particle size statistics, thermal analysis, and tensile testing. An optimal glass composition containing 20 mol% Bi₂O₃ was identified, exhibiting high thermal stability (ΔT = 224 °C) and a coefficient of thermal expansion of 9.63 × 10⁻⁶ °C⁻¹. At a brazing temperature of 750 °C, the glass demonstrated excellent wettability with a contact angle of 27°. A conductive paste comprising 94 wt% Cu and 6 wt% glass yielded a thick film with a minimum resistivity of 6.25 μΩ·cm and a maximum tensile strength of 25.2 MPa. Mechanism analysis revealed that the superior wettability drives the liquid glass phase to form a thin intermediate layer that significantly reinforces adhesion. These findings contribute to the research and development of subsequent novel glass systems with superior performance. Full article

Laser powder bed fusion has attracted increasing attention for the production of metallic substrates intended for surface functionalization by advanced physical vapor deposition coatings. This study investigates the influence of the substrate manufacturing route on the performance of titanium–aluminum–silicon nitride-coated AISI 316L stainless steel, with particular emphasis on substrates produced by laser powder bed fusion. Conventionally manufactured and additively manufactured AISI 316L substrates were coated with a titanium–aluminum–silicon nitride layer using high-power impulse magnetron sputtering. The substrates were characterized by tensile testing and microhardness measurements, while coating thickness and uniformity were evaluated using the crater ball method. The mechanical integrity of the coating–substrate system was assessed by progressive load scratch testing. The additively manufactured substrate exhibited a significantly higher yield strength (411 MPa) compared to the conventionally manufactured material (257 MPa), together with increased microhardness. The titanium–aluminum–silicon nitride coating showed a uniform thickness of 4.47 µm and a well-defined coating–substrate interface. Scratch tests revealed a delayed onset of coating damage on additively manufactured substrates, with the transition to severe adhesive failure occurring at higher normal loads compared to the conventionally manufactured substrate. These results demonstrate that AISI 316L stainless steel produced by laser powder bed fusion provides a mechanically robust substrate for titanium–aluminum–silicon nitride coatings deposited by high-power impulse magnetron sputtering, with favorable coating response under progressive loading conditions. Full article

This work investigates the reciprocal adhesion of Polybenzoxazole (PBO) and silicon nitride (SiN) with a focus on the combined effects of surface chemistry and environmental conditions, i.e., temperature (T) and relative humidity (RH). A set of six samples, including standard and silicon-rich SiN substrates treated with oxygen (O₂) or carbon tetrafluoride (CF₄) plasma, was fabricated and characterized by AFM, XPS, and TEM/EDX to quantify surface roughness and interfacial chemical modifications. Adhesion with PBO was then assessed through nanoindentation both in situ, during ambient control, and ex situ, after aging in a climatic chamber. Compared to PBO adhesion with as-deposited standard and silicon-rich SiN, O₂ plasma treatment was shown to improve adhesion by 13% and 24%, respectively, whereas CF₄ plasma treatment was still beneficial but more limited, improving adhesion by 8% for both substrates. The different effects were ascribed to the formation of a surface oxide layer after O₂ plasma, enhancing chemical affinity and substantially equalizing the adhesion on the two SiN substrates, while CF₄ plasma was impacting adhesion by reducing the substrates’ activity and, thus, increasing the efficiency of the PBO curing procedure. Notably, the adhesion loss with increasing dew point of the ambient (dependent on temperature and relative humidity) was observed across all samples regardless of surface treatment, reinforcing the critical role of absorbed moisture on polymeric film adhesion. However, this trend was observed for all samples only for in situ testing, with a loss of 25% in the critical load of delamination for the most critical environment, while ex situ tests showed a marked recovery of adhesion properties, leading to measurements no longer reflecting the actual state of the samples inside the altered environment. The results presented in this paper highlight the effect of substrate preparation on the adhesion of an organic compound and a substantial difference in environmental control methods for adhesion testing, providing an alternative approach to classical aging treatments and subsequent characterization for qualifying polymer/inorganic interfaces exposed to stressful operational conditions. Full article

This study investigates the deposition of amorphous silicon carbon nitride (a-SiCN) films using a microwave sheath–voltage combination plasma (MVP) source under duty-cycle-controlled deposition conditions. Duty ratios of 10, 30, 50, and 70% resulted in substrate temperatures of 180, 600, 980, and 1040 °C, respectively. The deposition rate reached a maximum of approximately 208 μm/h at a duty ratio of 30%. The atomic ratios of C, N, and Si remained nearly constant for duty ratios from 30% to 70%. X-ray diffraction confirmed that all films were amorphous. Raman spectra revealed features characteristic of amorphous carbon (a-C) for duty ratios of 30% or higher, suggesting the incorporation of a-C-like structures into the a-SiCN matrix. The film hardness increased as the duty-cycle-controlled deposition conditions shifted from 10% to 50% (180 to 980 °C), reaching a maximum of 22.65 ± 6.78 GPa at a duty ratio of 50%, and then decreased at 70% (1040 °C). These variations in hardness are suggested to be associated with coupled changes in hydrogen incorporation, C–N bonding, and the evolution of sp²-rich carbon clustering (graphite-like short-range ordering) under elevated temperature and ion-bombardment conditions. Full article

Stainless-steel nitride thin films were deposited onto silicon substrates at different temperatures ranging from 150 to 600 °C using reactive magnetron sputtering. The influence of substrate temperature on nitrogen incorporation, surface roughness, microstructure, and mechanical properties was systematically investigated. X-ray photoelectron spectroscopy (XPS) analysis showed that the nitrogen content increased with substrate temperature, reaching a maximum value of 34 wt.% at 350 °C, while at higher substrate temperatures (450–600 °C), the nitrogen content decreased. X-ray diffraction analysis revealed that the coating structure strongly depends on the substrate temperature. At temperatures above 450 °C, the films comprise a multiphase structure consisting of CrN, bcc-Fe, and Ni. In contrast, films deposited below 450 °C are dominated by the S-phase, corresponding to a nitrogen-supersaturated fcc structure. Scanning electron microscopy (SEM) analyses confirmed microstructural evolution with substrate temperature, showing fine, compact grains at lower temperatures and coarser structures at higher temperatures. Surface roughness measured by a profilometer exhibited a minimum at 350 °C. The mechanical performance of the films was evaluated using micro-Knoop hardness measurements, together with the calculated elastic strain indicator (H/E) and resistance to the plastic deformation parameter (H³/E²). The results showed that hardness and these mechanical indicators reached their maximum values at a substrate temperature of 350 °C. These findings provide valuable insight into the deposition–structure–property relationships of stainless-steel nitride thin films for wear-resistant and protective coating applications. Full article

Dislocation reduction in gallium nitride (GaN) epitaxial layers remains a critical challenge for high-performance GaN-based electronic devices. In this study, GaN epitaxial growth on newly-developed 4H-Silicon Carbide (SiC) meta-substrates was systematically investigated to elucidate the role of surface pattern geometry in modulating dislocation propagation. A series of truncated-hexagonal-pyramid meta-structures with a fixed array period and varying pattern ratios (R) were designed and fabricated to enable controlled tuning of the effective surface morphology. Atomic force microscopy confirmed comparable surface flatness for all samples after epitaxial growth. Cathodoluminescence analysis revealed a non-monotonic dependence of defect density on R, indicating the existence of an optimal pattern geometry. Among all configurations, the outstanding sample exhibited the lowest defect density, achieving a 54.96% reduction in threading dislocations (edge + mixed) compared with a planar reference. Cross-sectional transmission electron microscopy further confirmed a substantially reduced dislocation density and clear evidence of dislocation bending and termination near the meta-structured regions. These results demonstrate that geometry-engineered 4H-SiC meta-substrates provide an effective and scalable strategy for dislocation modulation in GaN epitaxy on SiC meta-substrates, offering a promising pathway toward advanced GaN power and RF devices. Full article

We investigated the radio frequency (RF) performance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on silicon carbide substrates, featuring two distinct T-shaped gate structures. A comparative analysis between a silicon nitride (SiN_x)-passivated T-gate and a floating T-gate design reveals significant differences in parasitic capacitance and high-frequency behavior. The floating gate structure effectively reduces fringe capacitance, resulting in improved cut-off frequency (f_T) and maximum oscillation frequency (f_max), achieving f_T = 82.7 GHz and f_max = 80.2 GHz, respectively. These enhancements underscore the critical importance of optimizing gate structures to advance GaN-based HEMTs for high-speed and high-power applications. The findings provide valuable insights for the design of future RF and millimeter-wave (mm-wave) devices. Full article