- Article
Enhanced Readout Reliability in Phase Change Memory with a Dual-Sensing-Margin Offset-Compensated Sense Amplifier
- Qingyu Wu,
- Chenchen Xie,
- Sannian Song,
- Xing Ding,
- Xi Li and
- Zhitang Song
Phase change memory (PCM) is considered one of the most promising candidates for next-generation non-volatile memory, owing to its scalability, durability, and cost-effectiveness. However, with the shrinking of device sizes and the reduction in suppl...