Search Results (25)

Highly (0002)-oriented Al_1−xSc_xN thin films with different Sc doping concentrations (x = 0, 0.2, 0.25, 0.3, and 0.43) were prepared via a magnetron sputtering system. The effects of Sc doping on the crystal structure and electrical property of the as-prepared thin films were investigated experimentally. The results of synchrotron radiation grazing-incidence wide-angle X-ray scattering (GIWAXS) and X-ray diffraction (XRD) demonstrated that the Sc³⁺ substitution for Al³⁺ induced asymmetric lattice distortion: the a-axis exhibited monotonic expansion (reaching 3.46 Å at x = 0.43) due to the larger atomic radius of Sc (~0.87 Å), while the c-axis attained a maximum value of 5.14 Å at x = 0.2 and subsequently contracted as the bond angle reduction became dominant. The dielectric constant increased to 34.67 (225% enhancement) at x = 0.43, attributed to the enhanced polarization of Sc-N bonds and interfacial charge accumulation effects. Simultaneously, the dielectric loss increased from 0.15% (x = 0) to 6.7% (x = 0.43). Leakage current studies revealed that high Sc doping (x = 0.43) elevated the leakage current density to 10⁻⁶ A/cm² under an electric field of 0.2 MV/cm, accompanied by a transition from Ohmic conduction to space-charge-limited current (SCLC) at a low electric field strength (<0.072 MV/cm). Full article

In recent years, implantable medical devices (IMDs) have introduced groundbreaking solutions for managing various health conditions. However, traditional implanted batteries necessitate periodic surgical replacement and tend to be relatively bulky, posing significant inconvenience to patients. To overcome these limitations, researchers have investigated various wireless power transfer (WPT) techniques, among which the ultrasonic wireless power transmission (UWPT) technique has distinct advantages. However, limited research has been conducted on ultrasonic power transfer at lower operating frequencies. Therefore, this study explores wireless power transfer using scandium-doped aluminum nitride (AlScN) piezoelectric micro-electromechanical transducers (PMUTs) in deionized (DI) water. Experimental results indicate that at an operating frequency of 14.075 kHz, the power transfer efficiency (PTE) can reach up to 2.68% under optimal load resistance conditions. Furthermore, a low-frequency UWPT system based on a AlScN PMUT has been developed, delivering a stable 3.3 V output for implantable medical devices and contributing to the advancement of a full-spectrum UWPT framework. Full article

An innovative design of a hydrophone based on a piezoelectric composite film of $AlN/S{c}_{0.2}A{l}_{0.8}N$ is presented. By designing a non-uniform composite sensitive layer, the dielectric loss and defect density are significantly reduced, while the high-voltage electrical characteristics of scandium-doped aluminum nitride are retained. X-ray diffraction analysis shows that the sensitive films have excellent crystal quality (FWHM is 0.34°). According to the standard underwater acoustic calibration test, the device exhibits full directivity with a minimum deviation of ±0.5 dB at 1 kHz frequency, sound pressure sensitivity of −162.9 dB (re: 1 V/$\mathsf{\mu }$Pa) and equivalent noise density of 46.1 dB (re: 1 $\mathsf{\mu }$Pa/√Hz). The experimental results show that the comprehensive performance of the piezoelectric heterostructure hydrophone meets the standard of commercial high-end hydrophones while maintaining mechanical stability, and provides a new solution for underwater acoustic sensing. Full article

PMUTs have been widely studied in recent years, particularly those based on the SOI (silicon-on-insulator) process, which have been partially commercialized and are extensively used in advanced applications such as ultrasonic ranging and spatial positioning. However, there has been little research on their high-temperature reliability, a critical area for their use in extreme environmental conditions. In this study, we investigate the high-temperature characteristics of air-coupled PMUTs based on SOI under various structural conditions, employing both finite element analysis (FEA) and experimental validation. We assess the performance of PMUTs at elevated temperatures by examining key parameters such as resonant frequency, the electromechanical coupling coefficient, mechanical amplitude, and warpage, all analyzed as functions of temperature. The experimental results show that temperature-induced drift becomes more significant as the back cavity size increases and the top silicon layer thickness decreases. These findings are consistent with the trends observed in the finite element analysis. Specifically, a PMUT with a back cavity diameter of 1000 $\mathsf{\mu }$m and a top silicon thickness of 4 $\mathsf{\mu }$m exhibits a temperature drift rate of up to 47.3% when the operating temperature rises from room temperature to 200 °C. Furthermore, at elevated temperatures, the maximum electromechanical coupling coefficient improves by 68.6%, and the mechanical amplitude increases by 66.1%. Heating experiments using a 3D profiler reveal that warpage increases from 0.3 $\mathsf{\mu }$m to 2.15 $\mathsf{\mu }$m as the temperature reaches 150 °C. These findings offer important theoretical insights into the temperature-induced drift behavior of PMUTs under high-temperature conditions. This study provides a comprehensive understanding of the performance variations of PMUTs, including changes in electromechanical coupling, mechanical amplitude, and structural warpage, which are critical for their reliable operation in extreme environments. The results presented here can serve as a foundation for the design and optimization of PMUTs in applications that require high-temperature stability, ensuring their enhanced reliability and performance in such demanding conditions. Full article

Piezoelectric micromachined ultrasonic transducers (PMUTs) have been widely applied in distance sensing applications. However, the rapid movement of miniature robots in complex environments necessitates higher ranging capabilities from sensors, making the enhancement of PMUT sensing distance critically important. In this paper, a scandium-doped aluminum nitride (ScAlN) PMUT based on a flexurally suspended membrane is proposed. Unlike the traditional fully clamped design, the PMUT incorporates a partially clamped membrane, thereby extending the vibration displacement and enhancing the output sound pressure. Experimental results demonstrate that at a resonant frequency of 78 kHz, a single PMUT generates a sound pressure level (SPL) of 112.2 dB at a distance of 10 mm and achieves a high receiving sensitivity of 12.3 mV/Pa. Distance testing reveals that a single PMUT equipped with a horn can achieve a record-breaking distance sensing range of 11.2 m when used alongside a device capable of simultaneously transmitting and receiving ultrasound signals. This achievement is significant for miniaturized and integrated applications that utilize ultrasound for long-range target detection. Full article

Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing techniques. On the occasion of the 100th anniversary of the birth of ferroelectricity, scandium-doped aluminum nitride, which is a different wurtzite structure, was reported to be ferroelectric with a larger coercive, remanent polarization, curie temperature, and a more stable ferroelectric phase. The inherent advantages have attracted widespread attention, promising better performance when used as data storage materials and better meeting the needs of the development of the information age. In this paper, we start from the characteristics and development history of ferroelectric materials, mainly focusing on the characteristics, preparation, and applications in memory devices of ferroelectric wurtzite AlScN. It compares and analyzes the unique advantages of AlScN-based memory devices, aiming to lay a theoretical foundation for the development of advanced memory devices in the future. Full article

Ultrasonic wireless power transfer technology (UWPT) represents a key technology employed for energizing implantable medical devices (IMDs). In recent years, aluminum nitride (AlN) has gained significant attention due to its biocompatibility and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. In the meantime, the integration of scandium-doped aluminum nitride (Al_90.4%Sc_9.6%N) is an effective solution to address the sensitivity limitations of AlN material for both receiving and transmission capabilities. This study focuses on developing a miniaturized UWPT receiver device based on AlScN piezoelectric micro-electromechanical transducers (PMUTs). The proposed receiver features a PMUT array of 2.8 × 2.8 mm² comprising 13 × 13 square elements. An acoustic matching gel is applied to address acoustic impedance mismatch when operating in liquid environments. Experimental evaluations in deionized water demonstrated that the power transfer efficiency (PTE) is up to 2.33%. The back-end signal processing circuitry includes voltage-doubling rectification, energy storage, and voltage regulation conversion sections, which effectively transform the generated AC signal into a stable 3.3 V DC voltage output and successfully light a commercial LED. This research extends the scope of wireless charging applications and paves the way for further device miniaturization by integrating all system components into a single chip in future implementations. Full article

Film bulk acoustic-wave resonators (FBARs) are widely utilized in the field of radio frequency (RF) filters due to their excellent performance, such as high operation frequency and high quality. In this paper, we present the design, fabrication, and characterization of an FBAR filter for the 3.0 GHz–3.2 GHz S-band. Using a scandium-doped aluminum nitride (Sc_0.2Al_0.8N) film, the filter is designed through a combined acoustic–electromagnetic simulation method, and the FBAR and filter are fabricated using an eight-step lithographic process. The measured FBAR presents an effective electromechanical coupling coefficient ($k_{eff}^2$) value up to 13.3%, and the measured filter demonstrates a −3 dB bandwidth of 115 MHz (from 3.013 GHz to 3.128 GHz), a low insertion loss of −2.4 dB, and good out-of-band rejection of −30 dB. The measured 1 dB compression point of the fabricated filter is 30.5 dBm, and the first series resonator burns out first as the input power increases. This work paves the way for research on high-power RF filters in mobile communication. Full article

In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated for the construction of the selector-free memory array application. The 10 nm Al_0.7Sc_0.3N film deposited on an 8-inch silicon wafer with sputtering technology exhibits a large remnant polarization exceeding 100 µC/cm² and a tight distribution of the coercive field, which is characterized by the positive-up-negative-down (PUND) method. As a result, the devices with lateral dimension of only 1.5 μm show a large memory window of over 250% and a low power consumption of ~40 pJ while maintaining a low disturbance rate of <2%. Additionally, the devices demonstrate stable multistate memory characteristics with a dedicated operation scheme. The back-end-of-line (BEOL)-compatible fabrication process, along with all these device performances, shows the potential of AlScN-based capacitors for the implementation of the high-density selector-free memory array. Full article

Ferroelectric scandium-doped aluminum nitride (Al_1-xSc_xN) is of considerable research interest because of its superior ferroelectricity. Studies indicate that Al_1-xSc_xN may suffer from a high leakage current, which can hinder further thickness scaling and long-term reliability. In this work, we systematically investigate the origin of the leakage current in Al_0.7Sc_0.3N films via experiments and theoretical calculations. The results reveal that the leakage may originate from the nitrogen vacancies with positively charged states and fits well with the trap-assisted Poole-Frenkel (P-F) emission. Moreover, we examine the cycling behavior of ferroelectric Al_0.7Sc_0.3N-based FeRAM devices. We observe that the leakage current substantially increases when the device undergoes bipolar cycling with a pulse amplitude larger than the coercive electric field. Our analysis shows that the increased leakage current in bipolar cycling is caused by the monotonously reduced trap energy level by monitoring the direct current (DC) leakage under different temperatures and the P-F emission fitting. Full article

This paper presents a novel piezoelectric micromachined ultrasonic transducer (PMUT) with theoretical simulation, fabrication, and testing. Conventional methods using a PCB or an external horn to adjust the PMUT acoustic field angle are limited by the need for transducer size. To address this limitation, the stepped-tube (expanded tube) backside cavity PMUT has been proposed. The stepped-tube PMUT and the tube PMUT devices have the same membrane structure, and the acoustic impedance matching of the PMUT is optimized by modifying the boundary conditions of the back cavity structure. The acoustic comparison experiments show that the average output sound pressure of the stepped-tube backside cavity PMUT has increased by 17%, the half-power-beam-width (θ_-3db) has been reduced from 55° to 30° with a reduction of 45%, and the side lobe level signal is reduced from 147 mV to 66 mV. In addition, this work is fabricated on an eight-inch wafer. The process is compatible with standard complementary metal oxide semiconductor (CMOS), conditions are stable, and the cost is controllable, plus it facilitates the batch process. These conclusions suggest that the stepped-tube backside cavity PMUT will bring new, effective, and reliable solutions to ranging applications. Full article

This paper presents a Piezoelectric micromechanical ultrasonic transducer (PMUT) based on a Pt/ScAlN/Mo/SiO₂/Si/SiO₂/Si multilayer structure with a circular suspension film of scandium doped aluminum nitride (ScAlN). Multiphysics modeling using the finite element method and analysis of the effect of different Sc doping concentrations on the resonant frequency, the effective electromechanical coupling coefficient ($k_{\mathrm{e}\mathrm{f}\mathrm{f}}^2$) and the station sensitivity of the PMUT cell are performed. The calculation results show that the resonant frequency of the ScAlN-based PMUT can be above 20 MHz and its $k_{\mathrm{e}\mathrm{f}\mathrm{f}}^2$ monotonically rise with the increasing doping concentrations in ScAlN. In comparison to the pure AlN thin film-based PMUT, the static receiving sensitivity of the PMUT based on ScAlN thin film with 35% Sc doping concentration is up to 1.61 mV/kPa. Meanwhile, the static transmitting sensitivity of the PMUT is improved by 152.95 pm/V. Furthermore, the relative pulse-echo sensitivity level of the 2 × 2 PMUT array based on the Sc doping concentration of 35% AlN film is improved by 16 dB compared with that of the cell with the same Sc concentration. The investigation results demonstrate that the performance of PMUT on the proposed structure can be tunable and enhanced by a reasonable choice of the Sc doping concentration in ScAlN films and structure optimization, which provides important guidelines for the design of PMUT for practical applications. Full article

In this paper, a high-sensitivity microelectromechanical system (MEMS) piezoelectric accelerometer based on a Scandium-doped Aluminum Nitride (ScAlN) thin film is proposed. The primary structure of this accelerometer is a silicon proof mass fixed by four piezoelectric cantilever beams. In order to enhance the sensitivity of the accelerometer, the Sc_0.2Al_0.8N piezoelectric film is used in the device. The transverse piezoelectric coefficient d₃₁ of the Sc_0.2Al_0.8N piezoelectric film is measured by the cantilever beam method and found to be −4.7661 pC/N, which is approximately two to three times greater than that of a pure AlN film. To further enhance the sensitivity of the accelerometer, the top electrodes are divided into inner and outer electrodes; then, the four piezoelectric cantilever beams can achieve a series connection by these inner and outer electrodes. Subsequently, theoretical and finite element models are established to analyze the effectiveness of the above structure. After fabricating the device, the measurement results demonstrate that the resonant frequency of the device is 7.24 kHz and the operating frequency is 56 Hz to 2360 Hz. At a frequency of 480 Hz, the sensitivity, minimum detectable acceleration, and resolution of the device are 2.448 mV/g, 1 mg, and 1 mg, respectively. The linearity of the accelerometer is good for accelerations less than 2 g. The proposed piezoelectric MEMS accelerometer has demonstrated high sensitivity and linearity, making it suitable for accurately detecting low-frequency vibrations. Full article

Piezoelectric micromechanical ultrasonic transducers (pMUTs) are new types of distance sensors with great potential for applications in automotive, unmanned aerial vehicle, robotics, and smart homes. However, previously reported pMUTs are limited by a short sensing distance due to lower output sound pressure. In this work, a pMUT with a special dual-ring structure based on scandium-doped aluminum nitride (ScAlN) is proposed. The combination of a dual-ring structure with pinned boundary conditions and a high piezoelectric performance ScAlN film allows the pMUT to achieve a large dynamic displacement of 2.87 μm/V and a high electromechanical coupling coefficient ($k_t^2$) of 8.92%. The results of ranging experiments show that a single pMUT achieves a distance sensing of 6 m at a resonant frequency of 91 kHz, the farthest distance sensing registered to date. This pMUT provides surprisingly fertile ground for various distance sensing applications. Full article

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made ${\mathrm{Sc}}_{\mathrm{x}}{\mathrm{Al}}_{1-\mathrm{x}}\mathrm{N}$ a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating ${\mathrm{Sc}}_{\mathrm{x}}{\mathrm{Al}}_{1-\mathrm{x}}\mathrm{N}$ devices is its difficulty in etching, specifically with higher scandium concentration. In this work, we have developed an experimental approach with high temperature annealing followed by a wet etching process using tetramethyl ammonium hydroxide (TMAH), which maintains etching uniformity across various Sc compositions. The experimental results of etching approximately 730 nm of ${\mathrm{Sc}}_{\mathrm{x}}{\mathrm{Al}}_{1-\mathrm{x}}\mathrm{N}$ (x = 0.125, 0.20, 0.40) thin films show that the etch rate decreases with increasing scandium content. Nevertheless, sidewall verticality of 85°~90° (±0.2°) was maintained for all Sc compositions. Based on these experimental outcomes, it is anticipated that this etching procedure will be advantageous in the fabrication of acoustic, photonic, and piezoelectric devices. Full article