Search Results (1,474)

As one of the polymorphs of the gallium oxide family, ε gallium oxide (ε-Ga₂O₃) demonstrates promising potential in high-power electronic devices and solar-blind photodetection applications. However, the synthesis of pure-phase ε-Ga₂O₃ remains challenging through low-energy consumption methods, due to its metastable phase of gallium oxide. In this study, we have fabricated pure-phase and highly oriented ε-Ga₂O₃ thin films on c-plane sapphire substrates via thermal atomic layer deposition (ALD) at a low temperature of 400 °C, utilizing low-reactive trimethylgallium (TMG) as the gallium precursor and ozone (O₃) as the oxygen source. X-ray diffraction (XRD) results revealed that the in situ-grown ε-Ga₂O₃ films exhibit a preferred orientation parallel to the (002) crystallographic plane, and the pure ε phase remains stable following a post-annealing up to 800 °C, but it completely transforms into β-Ga₂O₃ once the thermal treatment temperature reaches 900 °C. Notably, post-annealing at 800 °C significantly enhanced the crystalline quality of ε-Ga₂O₃. To evaluate the optoelectronic characteristics, metal–semiconductor–metal (MSM)-structured solar-blind photodetectors were fabricated using the ε-Ga₂O₃ films. The devices have an extremely low dark current (<1 pA), a high photo-to-dark current ratio (>10⁶), a maximum responsivity (>1 A/W), and the optoelectronic properties maintained stability under varying illumination intensities. This work provides valuable insights into the low-temperature synthesis of high-quality ε-Ga₂O₃ films and the development of ε-Ga₂O₃-based solar-blind photodetectors for practical applications. Full article

Wide-bandgap diamond photodetectors face a fundamental trade-off between dark current suppression and photocurrent collection due to high Schottky barriers. Here, a photo-modulation strategy is demonstrated by integrating monolayer graphene as transparent electrodes on oxygen-terminated single-crystal diamond. The atomically thin graphene (87.3% UV transmittance at 220 nm) allows photons to penetrate and dynamically reduce Schottky barriers through photoinduced electric fields, while maintaining high barriers (~2.3 eV) under dark conditions for ultralow leakage current. Compared with conventional 100 nm Au electrodes, graphene-based devices exhibit a 4.9-fold responsivity improvement (0.158 A/W at 220 nm) and a 5.2-fold detectivity increase (8.35 × 10¹³ cm·Hz^1/2/W), while preserving ultralow dark current (~10⁻¹² A at ±100 V). XPS measurements confirm a minimal Fermi level shift (0.06 eV) upon graphene integration, demonstrating robust surface state pinning by oxygen termination. Transient photoresponse reveals a 27% faster rise time (30 ns vs. 41 ns) with bi-exponential decay governed by band-to-band recombination (τ1 ≈ 75 ns) and trap-assisted recombination (τ2 ≈ 411 ns). The devices maintain stable performance after one month of ambient exposure and successfully demonstrate UV optical communication capability. This transparent electrode approach offers a versatile strategy for enhancing wide-bandgap semiconductor photodetectors for secure communications, environmental monitoring, and industrial sensing applications. Full article

Coating Brownian thermal noise is a major limitation to the sensitivity of gravitational-wave detectors. To reduce it, future detectors are planned to operate at cryogenic temperatures. This implies a change of their mirror coating materials and the use of a longer laser wavelength, such as 1550 nm. A stack of amorphous silicon and silicon nitride layers has previously been proposed as a promising combination of low- and high-refractive index materials to realize low-noise highly-reflective coatings. An essential step towards such coatings is the production of both materials via ion-beam sputtering. In this paper, for the first time, we present a study of the optical properties at 1550 nm of silicon nitride thin films deposited via ion beam sputtering. The refractive index and optical absorption as a function of post-deposition heat treatment temperature are investigated using a spectrophotometer and a photo-thermal common-path interferometer. Finally, we discuss the prospect of combining this material with amorphous silicon. Full article

The implementation of photoelectric conversion in photoelectric integrated systems requires the design of photodetectors (PDs) with quick response times and low power consumption. In this work, the self-powered photodetector was prepared by antimony selenide (Sb₂Se₃) microwires (MW)/Se microtube (MT) heterojunction by coating Ag nanowires (NW). The incorporation of Ag-NW involves dual enhancement mechanisms. First, the surface plasmon resonance (SPR) effect amplifies the light absorption across UV–vis–NIR spectra, and the conductive networks facilitate the rapid carrier transport. Second, the type-II band alignment between Sb₂Se₃ and Se synergistically separates photogenerated carriers, while the Ag-NW further suppress the recombination through built-in electric field modulation. The optimized device achieves remarkable responsivity of 122 mA W⁻¹ at 368 nm under zero bias, with a response/recovery time of 8/10 ms, outperforming most reported Sb₂Se₃-based detectors. The heterostructure provides an effective strategy for developing self-powered photodetectors with broadband spectral adaptability. The switching ratio, responsivity, and detectivity of the Sb₂Se₃-MW/Se-MT/Ag-NW device increased by 260%, 810%, and 849% at 368 nm over the Sb₂Se₃-MW/Se-MT device, respectively. These results show that the addition of Ag-NW effectively improves the photoelectric performance of the Sb₂Se₃-MW/Se-MT heterojunction, providing new possibilities for the application of self-powered optoelectronic devices. Full article

Hexagonal boron nitride (hBN) is a promising material for vacuum ultraviolet (VUV) photodetection, owing to its ultra-wide bandgap and cost-effective synthesis. In this work, 2-inch high-quality hBN films were successfully deposited by magnetron sputtering, and 16×1 linear photodetector arrays were fabricated using a patterned electrode process. The fabricated devices exhibit excellent uniformity, achieving a dark current below 2 pA, a responsivity of 2.665 mA/W, a specific detectivity of 4.831 × 10⁹ Jones, and rise/decay times of 91.31 and 147.25 ms, respectively. Furthermore, clear VUV images were obtained by using the photodetector array as the imaging unit of the imaging system. These results provide a convenient way to construct high-performance linear VUV photodetector arrays based on hBN films, and thus may push forward their future applications. Full article

Single-pixel imaging (SPI), generally based on computational imaging, has the advantages of a wide bandwidth and imaging objects beyond the visual field. However, for general SPI, to obtain a picture with few shadows by one photodetector is a great challenge. To reduce shadows in SPI, this paper proposes a coaxial SPI to reduce shadows in reconstructed images effectively with a simple structure. Unlike the general shadow reduction method in SPI based on image post-processing, the method proposed in this paper is without the need of additional image post-processing. Shadows can be reduced effectively by single view of only one photodetector. The experiments show that the reconstructed image in the coaxial structure is free from shadows, while the picture reconstructed by the non-coaxial structure contains lots of shadows. Moreover, the coaxial structure shows good applicability for the imaging of the end face in a deep hole. The proposed coaxial SPI has provided a potential direction for the applications of the SPI in information extraction and image quality improvement since the shadows in the reconstructed images have been reduced effectively. Full article

Silicon nanowires (SiNWs) fabricated by Ag-assisted metal-assisted chemical etching (MACE) exhibit excellent light-trapping performance, yet their fragile high-aspect-ratio morphology severely limits reliable metallization in photovoltaic devices. Conventional electrode deposition methods often fail on dense SiNW arrays due to poor mechanical stability of the nanowire tips, leading to delamination, inhomogeneous coverage, and high contact resistance. In this work, we introduce a maskless laser-based truncation technique that selectively shortens MACE-derived SiNWs to controlled residual heights of 300–500 nm exclusively within the regions intended for electrode formation, while preserving the full nanowire morphology in active areas. A detailed parametric study of laser power, scanning speed, and pulse repetition frequency allowed the identification of an optimal processing window enabling controlled tip melting without damaging the nanowire roots or the crystalline silicon substrate. High-resolution SEM imaging confirms uniform planarization, well-preserved structural integrity, and the absence of subsurface defects in the laser-processed tracks. Optical reflectance measurements further demonstrate that introducing 2% and 5% truncated surface fractions—corresponding to the minimum and maximum metallized front-grid coverage in industrial Si solar cells—results in only a minimal reflectance increase, preserving the advantageous the light-trapping behavior of the SiNW texture. The proposed laser truncation approach provides a clean, scalable, and industrially compatible route toward creating electrode-ready surfaces on nanostructured silicon, enabling reliable metallization while maintaining optical performance. This method offers strong potential for integration into silicon photovoltaics, photodetectors, and nanoscale electronic and sensing devices. Full article

Future space detectors for Ultra High Energy neutrinos and cosmic rays will utilize Cherenkov telescopes to detect forward-beamed Cherenkov light produced by charged particles in Extensive Air Showers (EASs). A Cherenkov detector can be equipped with an array of Silicon Photo-Multiplier (SiPM) pixels, which offer several advantages over traditional Photo-Multiplier Tubes (PMTs). SiPMs are compact and lightweight and operate at lower voltages, making them well-suited for space-based experiments. The SiSMUV (SiPM-based Space Monitor for UV-light) is developing a SiPM-based Cherenkov camera for PBR (POEMMA Baloon with Radio) at INFN Napoli. To understand the response of such an instrument, a comprehensive simulation of the response of individual SiPM pixels to incident light is needed. For the accurate simulation of a threshold trigger, this simulation must reproduce the current produced by a SiPM pixel as a function of time. Since a SiPM pixel is made of many individual Avalanche Photo-Diodes (APDs), saturation and pileup in APDs must also be simulated. A Gaussian mixture fit to ADC count spectrum of a SiPM pixel exposed to low levels of laser light at INFN Napoli shows a significant amount of samples between the expected PE (Photo Electron) peaks. Thus, noise sources such as dark counts and afterpulses, which result in partially integrated APD pulses, must be accounted for. With static, reasonable values for noise rates, the simulation chain presented in this work uses the characteristics of individual APDs to produce the aggregate current produced by a SiPM pixel. When many such pulses are simulated and integrated, the ADC spectra generated by low levels of laser light at the INFN Napoli SiSMUV test setup can be accurately reproduced. Full article

Tellurium–selenium alloy films exhibit excellent performance in short-wave infrared photodetection due to their adjustable bandgap, high carrier mobility, low fabrication temperature, and compatibility with CMOS technologies. Owing to their distinctive one-dimensional chain-like architecture, they can form van der Waals heterojunctions with materials such as silicon, III–V compound semiconductors, and metal oxides. This enables the construction of high-performance short-wave infrared photodetectors. This research examines the latest advancements in heterojunction photodetectors utilizing Te_xSe_1−x alloy sheets. First, the backdrop and justification of this review are outlined followed by discussing the fundamental aspects of Te_xSe_1−x alloy films including their appearance, electrical functionality, optoelectronic performance, fabrication methods and figures of merit for photodetectors. Subsequently, we examine recent advancements in heterojunction photodetectors based on Te_xSe_1−x alloy films and discuss methods to enhance device performance through interface engineering and structural design. Finally, we consolidate the findings and discuss potential future developments and challenges we may encounter. Full article

In this study, we explore the integration of a cost-effective triboelectric nanogenerator (TENG) with an large silicon PIN detector (diameter: 12 mm) for intelligent wireless recognition applications. Wireless communication eliminates the need for physical connections, enabling greater flexibility and scalability in deployment. It allows for seamless integration of AI systems into a wide range of environments without the constraints of wiring, reducing installation complexity and enhancing mobility. Additionally, we demonstrate the TENG’s functionality as an autonomous communication unit. The TENG is employed to convert various environmentally triggered signals into digital formats and to autonomously power optoelectronic devices, thus eliminating the need for an external power supply. By integrating optoelectronic components within the self-powered sensing system, the TENG can identify specific trigger information and reduce extraneous noise, thereby improving the accuracy of information transmission. Moreover wireless technology facilitates real-time data transmission and processing. This setup not only enhances the overall efficiency and adaptability of the system but also supports continuous operation in diverse and dynamic settings. This paper introduces a novel convolutional neural network-long short-term memory (CNN-LSTM) fusion neural network model. Utilizing the sensing system in combination with the CNN-LSTM neural network enables the collection and identification of variations in the flicker frequency and luminosity of optoelectronic devices. This capability allows for the recognition of environmental trigger signals generated by the TENG. The classification and recognition results of human body trigger signals indicate a recognition accuracy of 92.94%. Full article

We report a high-performance photomultiplication-type organic photodetector (OPD) based on a poly[2-methoxy-5-(3,7-dimethyloctyloxy)-1,4-phenylenevinylene]:[6,6]-phenyl-C₆₁-butyric acid methyl ester (MDMO-PPV:PC₆₁BM) active layer operating in the ultrastrong coupling regime. Systematic optimization of the PC₆₁BM ratio in reference non-cavity devices confirms that trap-assisted hole injection from the Ag contact enables external quantum efficiencies (EQEs) exceeding 2000% and fast transient responses under 521 nm illumination, close to the absorption peak of MDMO-PPV. Incorporation of the optimized PC₆₁BM ratio into a λ/2 microcavity produces well-resolved lower (LP) and upper (UP) polariton branches with a pronounced Rabi splitting of approximately 0.9 eV, confirming the establishment of ultrastrong light–matter coupling. The resulting cavity OPD exhibits a distinct wavelength-dependent response compared with its non-cavity counterpart, achieving maximum EQEs of 838% at 450 nm (near the UP mode) and 445% at 628 nm (corresponding to the LP mode). These spectral responses are attributed to cavity-induced field modulation, which enhances exciton generation beyond the primary absorption band of MDMO-PPV. Overall, this work demonstrates that combining photomultiplication mechanisms with cavity-field engineering provides an effective strategy for realizing narrowband, high-gain polaritonic photodetectors that surpass the spectral response limitations of conventional organic semiconductors. Full article

A photovoltaic-integrated broadband photodetector based on vertically-stacked lateral-aligned III–V nanowire arrays is proposed and investigated. The staggered arrangement configuration drastically reduces the competition between solar cell and photodetector that is difficult to avoid in vertically-stacked planar structures, which enables broadband strong absorption. The lower GaAs nanowires (NWs) act as Mie scattering centers, which scatter the incident light passing through the gaps back to the upper layer, enhancing the absorption of InAs NWs over a wide wavelength range from the ultraviolet to the infrared. Meanwhile, the light trapping effect of the upper InAs nanowires improves the absorption of lower GaAs NWs. At a near-infrared wavelength of 1400 nm, the photovoltaic-integrated InAs nanowire photodetector exhibits a photocurrent density of 168.83 mA/cm² and responsivity of 0.168 A/W, 90% and 93% higher than the single layer InAs nanowires. The conversion efficiency of the GaAs nanowire solar cell is also improved after integration. This work may pave the way for the development of self-powered miniaturized broadband photodetectors. Full article

Reducing the Schottky barrier at the metal–semiconductor interface and achieving Ohmic contact is crucial for the development of high-performance Schottky field-effect transistors. This paper investigates the stability, interface interactions, interlayer charge transfer, and types of Schottky contacts in the graphene/ZnSe heterostructure structure using first-principles methods. It employs biaxial strain as a control mechanism. The results indicate that applying compressive strain increases the barrier and band gap while maintaining n-type contact; whereas tensile strain reduces the n-type barrier to negative values, inducing Ohmic contact and decreasing the band gap. The findings of this study will provide theoretical references for the design and fabrication of field-effect transistors, photodetectors, and other optoelectronic devices. Full article

This work presents the results of a theoretical investigation of the electronic and optical properties of van der Waals Janus nanoheterostructures MoS₂/SeMoS and MoSe₂/SMoSe, carried out within the framework of density functional theory (DFT) using the generalized gradient approximation (GGA-PBE) together with the Grimme-D3 dispersion correction. The calculated band structures show that both heterostructures possess an indirect bandgap whose magnitude is highly sensitive to an external electric field. In the MoS₂–SeMoS system, increasing the applied field leads to a gradual narrowing of the bandgap and a transition to a metallic state at approximately 75 V, whereas in MoSe₂–SMoSe, the bandgap first increases (up to 20 V) and then decreases, indicating a nonlinear field-dependent behavior. Analysis of the dielectric function reveals an enhancement of the static dielectric permittivity and a red shift in the absorption spectra with increasing field strength, which can be attributed to charge redistribution and an increased contribution from ionic polarizability. These results demonstrate the possibility of effectively controlling the bandgap width, polarizability, and optical response of Janus nanoheterostructures using an external electric field. This opens up promising prospects for their application in tunable photodetectors, light modulators, valleytronic components, and next-generation optoelectronic systems. Full article

In this work, we present a novel compact particle identification (PID) detector concept based on Silicon Photomultipliers (SiPMs) optimized to perform combined Ring-Imaging Cherenkov (RICH) and Time-of-Flight (TOF) measurements using a common photodetector layer. The system consists of a Cherenkov radiator layer separated from a photosensitive surface equipped with SiPMs by an expansion gap. A thin glass slab, acting as a second Cherenkov radiator, is coupled to the SiPMs to perform Cherenkov-based charged particle timing measurements. We assembled a small-scale prototype instrumented with various Hamamatsu SiPM array sensors with pixel pitches ranging from 2 to 3 mm and coupled with 1 mm thick fused silica window. The RICH radiator consisted of a 2 cm thick aerogel tile with a refractive index of 1.03 at 400 nm. The prototype was successfully tested in beam test campaigns at the CERN PS T10 beam line with pions and protons. We measured a single-hit angular resolution of about 4 mrad at the Cherenkov angle saturation value and a time resolution better than 50 ps RMS for charged particles with Z = 1. The present technology makes the proposed SiPM-based PID system particularly attractive for space applications due to the limited detector volumes available. In this work, we present beam test results obtained with the detector prototype and we discuss possible configurations optimized for the identification of ions in space applications. Full article