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Keywords = oxide-based thin film transistor (TFT)

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13 pages, 3688 KiB  
Article
Layer-by-Layer Engineered Zinc–Tin Oxide/Single-Walled Carbon Nanotube (ZTO/SWNT) Hybrid Films for Thin-Film Transistor Applications
by Yong-Jae Kim, Young-Jik Lee, Yeon-Hee Kim, Byung Seong Bae and Woon-Seop Choi
Micromachines 2025, 16(7), 825; https://doi.org/10.3390/mi16070825 - 20 Jul 2025
Viewed by 507
Abstract
Indium-based oxide semiconductors have been commercialized because of their excellent electrical properties, but the high cost, limited availability, and environmental toxicity of indium necessitate the development of alternative materials. Among the most promising candidates, zinc–tin oxide (ZTO) is an indium-free oxide semiconductor with [...] Read more.
Indium-based oxide semiconductors have been commercialized because of their excellent electrical properties, but the high cost, limited availability, and environmental toxicity of indium necessitate the development of alternative materials. Among the most promising candidates, zinc–tin oxide (ZTO) is an indium-free oxide semiconductor with considerable potential, but its relatively low carrier mobility and inherent limitations in thin-film quality demand further performance enhancements. This paper proposes a new approach to overcome these challenges by incorporating single-walled carbon nanotubes (SWNTs) as conductive fillers into the ZTO matrix and using a layer-by-layer multiple coating process to construct nanocomposite thin films. As a result, ZTO/SWNTs (0.07 wt.%) thin-film transistors (TFTs) fabricated with three coating cycles exhibited a high saturation mobility of 18.72 cm2/V·s, a threshold voltage of 0.84 V, and a subthreshold swing of 0.51 V/dec. These values represent an approximately four-fold improvement in mobility compared to ZTO TFT, showing that the multiple-coating-based nanocomposite strategy can effectively overcome the fundamental limitations. This study confirms the feasibility of achieving high-performance oxide semiconductor transistors without indium, providing a sustainable pathway for next-generation flexible electronics and display technologies. Full article
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12 pages, 14936 KiB  
Article
Relation Between Thickness and TFTs Properties of HfO2 Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition
by Qizhen Chen, Wanqiang Fu, Jing Han, Xiaoying Zhang and Shui-Yang Lien
Nanomaterials 2025, 15(10), 719; https://doi.org/10.3390/nano15100719 - 10 May 2025
Viewed by 641
Abstract
The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density. Amorphous indium gallium zinc oxide (a-IGZO) TFTs are promising candidates to meet these requirements. However, conventional silicon dioxide gate insulators [...] Read more.
The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density. Amorphous indium gallium zinc oxide (a-IGZO) TFTs are promising candidates to meet these requirements. However, conventional silicon dioxide gate insulators provide limited channel modulation due to their low dielectric constant, while alternative high-k dielectrics often suffer from high leakage currents and poor surface quality. Plasma-enhanced atomic layer deposition (PEALD) enables the atomic-level control of film thickness, resulting in high-quality films with superior conformality and uniformity. In this work, a systematic investigation was conducted on the properties of HfO2 films and the electrical characteristics of a-IGZO TFTs with different HfO2 thicknesses. A Vth of −0.9 V, μsat of 6.76 cm2/Vs, SS of 0.084 V/decade, and Ion/Ioff of 1.35 × 109 are obtained for IGZO TFTs with 40 nm HfO2. It is believed that the IGZO TFTs based on a HfO2 gate insulating layer and prepared by PEALD can improve electrical performance. Full article
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11 pages, 8235 KiB  
Article
Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode
by Wanqiang Fu, Qizhen Chen, Peng Gao, Linqin Jiang, Yu Qiu, Dong-Sing Wuu, Ray-Hua Horng and Shui-Yang Lien
Energies 2025, 18(9), 2331; https://doi.org/10.3390/en18092331 - 2 May 2025
Viewed by 581
Abstract
The surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO-TFTs fabricated with varying MXene concentrations. [...] Read more.
The surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO-TFTs fabricated with varying MXene concentrations. As the MXene concentration increases, both the sheet resistance and porosity of the electrodes decrease. VC-IGZO-TFTs based on a 3.0 mg/mL MXene concentration exhibit optimal electrical performance, with a threshold voltage (Vth) of 0.16 V, a subthreshold swing (SS) of 0.20 V/decade, and an on/off current ratio (Ion/Ioff) of 4.90 × 105. Meanwhile, the VC-IGZO-TFTs exhibit excellent electrical reliability and mechanical stability. This work provides a way to analyze the influence of sheet resistance and porosity on the performance of VC-IGZO-TFTs, offering a viable approach for enhancing device efficiency through porous MXene electrode engineering. Full article
(This article belongs to the Special Issue Advanced Technologies of Solar Cells: 2nd Edition)
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17 pages, 2937 KiB  
Review
Recent Advancements in P-Type Inorganic Semiconductor Thin-Film Transistors: A Review
by Narendranaik Mude, Jongsu Lee and Sungwoon Cho
Crystals 2025, 15(4), 341; https://doi.org/10.3390/cryst15040341 - 3 Apr 2025
Viewed by 1020
Abstract
The continuous growth of energy-efficient electronic devices and compact systems has motivated researchers to develop TFTs based on p-type semiconductors. This review examines the developments in p-type thin-film transistors (TFTs) processed using solution methods to achieve integration with complementary metal–oxide–semiconductor technology. Improving organic [...] Read more.
The continuous growth of energy-efficient electronic devices and compact systems has motivated researchers to develop TFTs based on p-type semiconductors. This review examines the developments in p-type thin-film transistors (TFTs) processed using solution methods to achieve integration with complementary metal–oxide–semiconductor technology. Improving organic p-type materials is critical for achieving advanced mobility and stability characteristics with suitable process integration. Scientists study these materials for use in wearable devices which display mechanical strength when fitted onto a curve. This review presents an exclusive discussion about the wide spectrum of applications which involve flexible displays and sensors, together with upcoming technologies such as artificial skin and flexible integrated circuits. The article examines present material challenges, along with device reliability and large-scale production methods, to give a thorough analysis of solution-processed p-type TFTs toward their broad implementation in upcoming electronic devices. By summarizing the developments and most recent studies in the field, this review aims to provide useful information regarding current research into and future trends of p-type TFTs. Full article
(This article belongs to the Special Issue Solution Processing and Properties of Oxide Films and Nanostructures)
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22 pages, 2821 KiB  
Review
Pixel Circuit Designs for Active Matrix Displays
by Dan-Mei Wei, Hua Zheng, Chun-Hua Tan, Shenghao Zhang, Hua-Dan Li, Lv Zhou, Yuanrui Chen, Chenchen Wei, Miao Xu, Lei Wang, Wei-Jing Wu, Honglong Ning and Baohua Jia
Appl. Syst. Innov. 2025, 8(2), 46; https://doi.org/10.3390/asi8020046 - 31 Mar 2025
Cited by 1 | Viewed by 2929
Abstract
Pixel circuits are key components of flat panel displays, including liquid crystal displays (LCDs), organic light-emitting diode displays (OLEDs), and micro light-emitting diode displays (micro-LEDs). Depending on the active layer material of the thin film transistor (TFT), pixel circuits are categorised into amorphous [...] Read more.
Pixel circuits are key components of flat panel displays, including liquid crystal displays (LCDs), organic light-emitting diode displays (OLEDs), and micro light-emitting diode displays (micro-LEDs). Depending on the active layer material of the thin film transistor (TFT), pixel circuits are categorised into amorphous silicon (a-Si) technology, low-temperature polycrystalline silicon (LTPS) technology, metal oxide (MO) technology, and low-temperature polycrystalline silicon and oxide (LTPO) technology. In this review, we outline the fundamental display principles and four major TFT technologies, covering conventional single-gated TFTs to novel two-gated TFTs. We focus on novel pixel circuits for three glass-based display technologies with additional mention of pixel circuits for silicon-based OLED and silicon-based micro-LED. Full article
(This article belongs to the Section Control and Systems Engineering)
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11 pages, 5202 KiB  
Article
Fabrication of Sol Gel Solution-Based Zinc–Tin Oxide/Carbon Nanotube Hybrid Thin-Film for Thin-Film Transistors
by Yong-Jae Kim and Woon-Seop Choi
Micromachines 2025, 16(4), 411; https://doi.org/10.3390/mi16040411 - 30 Mar 2025
Cited by 1 | Viewed by 489
Abstract
Solution-processed oxide thin-film transistors (TFTs) can lead to a significant cost-effective process and suitable for large-scale fabrication. However, they often face limitations, such as lower field-effect mobility, the use of indium which is toxic and rare, and degradation compared to vacuum-based technologies. The [...] Read more.
Solution-processed oxide thin-film transistors (TFTs) can lead to a significant cost-effective process and suitable for large-scale fabrication. However, they often face limitations, such as lower field-effect mobility, the use of indium which is toxic and rare, and degradation compared to vacuum-based technologies. The single-walled carbon nanotubes (SWNTs) were incorporated with zinc–tin oxide (ZTO) precursor solution without dispersants for the device’s active layer. Sol–gel solution-based ZTO/single-wall carbon nanotube (ZTO/SWNT) (TFTs) with various SWNT concentrations were fabricated to improve the performance of ZTO TFTs. ZTO TFTs containing SWNTs exhibited better electrical performance than those without SWNTs. Among the samples, the ZTO TFT with an SWNT concentration of 0.07 wt.% showed a field-effect mobility (μsat) of 13.12 cm2/Vs (increased by a factor of 3) and an Ion/Ioff current ratio of 7.66 × 107 with a lower threshold voltage. SWNTs in the ZTO/SWNTs acted as carrier transfer rods, playing a crucial role in controlling the electrical performance of ZTO TFTs. The proposed fabrication of a sol–gel solution-based process is highly compatible with existing processes because it brings ZTO/SWNT hybrid TFTs closer to practical application, opening up the possibilities for next-generation electronics in flexible devices and low-cost manufacturing. Full article
(This article belongs to the Special Issue Multifunctional Transistors: Outlooks and Challenges)
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22 pages, 5992 KiB  
Review
IGZO-Based Electronic Device Application: Advancements in Gas Sensor, Logic Circuit, Biosensor, Neuromorphic Device, and Photodetector Technologies
by Youngmin Han, Juhyung Seo, Dong Hyun Lee and Hocheon Yoo
Micromachines 2025, 16(2), 118; https://doi.org/10.3390/mi16020118 - 21 Jan 2025
Cited by 1 | Viewed by 3628
Abstract
Metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have attracted significant attention from researchers in the fields of liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) for decades. This interest is driven by their high electron mobility of over ~10 [...] Read more.
Metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have attracted significant attention from researchers in the fields of liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) for decades. This interest is driven by their high electron mobility of over ~10 cm2/V·s and excellent transmittance of more than ~80%. Amorphous IGZO (a-IGZO) offers additional advantages, including compatibility with various processes and flexibility making it suitable for applications in flexible and wearable devices. Furthermore, IGZO-based thin-film transistors (TFTs) exhibit high uniformity and high-speed switching behavior, resulting in low power consumption due to their low leakage current. These advantages position IGZO not only as a key material in display technologies but also as a candidate for various next-generation electronic devices. This review paper provides a comprehensive overview of IGZO-based electronics, including applications in gas sensors, biosensors, and photosensors. Additionally, it emphasizes the potential of IGZO for implementing logic gates. Finally, the paper discusses IGZO-based neuromorphic devices and their promise in overcoming the limitations of the conventional von Neumann computing architecture. Full article
(This article belongs to the Special Issue Semiconductor and Energy Materials and Processing Technology)
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14 pages, 5762 KiB  
Article
Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors
by Jun Liu, Xin Xiong, Han Li, Xiangchen Huang, Yajun Wang, Yifa Sheng, Zhihao Liang, Rihui Yao, Honglong Ning and Xiaoqin Wei
Micromachines 2024, 15(12), 1465; https://doi.org/10.3390/mi15121465 - 30 Nov 2024
Cited by 3 | Viewed by 1831
Abstract
High-k metal oxides are gradually replacing the traditional SiO2 dielectric layer in the new generation of electronic devices. In this paper, we report the production of five-element high entropy metal oxides (HEMOs) dielectric films by solution method and analyzed the role of [...] Read more.
High-k metal oxides are gradually replacing the traditional SiO2 dielectric layer in the new generation of electronic devices. In this paper, we report the production of five-element high entropy metal oxides (HEMOs) dielectric films by solution method and analyzed the role of each metal oxide in the system by characterizing the film properties. On this basis, we found optimal combination of (AlGaTiYZr)Ox with the best dielectric properties, exhibiting a low leakage current of 1.2 × 10−8 A/cm2 @1 MV/cm and a high dielectric constant, while the film’s visible transmittance is more than 90%. Based on the results of factor analysis, we increased the dielectric constant up to 52.74 by increasing the proportion of TiO2 in the HEMOs and maintained a large optical bandgap (>5 eV). We prepared thin film transistors (TFTs) based on an (AlGaTiYZr)Ox dielectric layer and an InGaZnOx (IGZO) active layer, and the devices exhibit a mobility of 18.2 cm2/Vs, a threshold voltage (Vth) of −0.203 V, and an subthreshold swing (SS) of 0.288 V/dec, along with a minimal hysteresis, which suggests a good prospect of applying HEMOs to TFTs. It can be seen that the HEMOs dielectric films prepared based on the solution method can combine the advantages of various high-k dielectrics to obtain better film properties. Moreover, HEMOs dielectric films have the advantages of simple processing, low-temperature preparation, and low cost, which are expected to be widely used as dielectric layers in new flexible, transparent, and high-performance electronic devices in the future. Full article
(This article belongs to the Special Issue Thin Film Microelectronic Devices and Circuits)
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10 pages, 2127 KiB  
Article
Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors
by Zhao Li, Jenner H. L. Ngai and Jianfu Ding
Nanomaterials 2024, 14(18), 1477; https://doi.org/10.3390/nano14181477 - 11 Sep 2024
Viewed by 1164
Abstract
The control of the performance of single-walled carbon nanotube (SWCNT) random network-based transistors is of critical importance for their applications in electronic devices, such as complementary metal oxide semiconducting (CMOS)-based logics. In ambient conditions, SWCNTs are heavily p-doped by the H2O/O [...] Read more.
The control of the performance of single-walled carbon nanotube (SWCNT) random network-based transistors is of critical importance for their applications in electronic devices, such as complementary metal oxide semiconducting (CMOS)-based logics. In ambient conditions, SWCNTs are heavily p-doped by the H2O/O2 redox couple, and most doping processes have to counteract this effect, which usually leads to broadened hysteresis and poor stability. In this work, we coated an SWCNT network with various common polymers and compared their thin-film transistors’ (TFTs’) performance in a nitrogen-filled glove box. It was found that all polymer coatings will decrease the hysteresis of these transistors due to the partial removal of charge trapping sites and also provide the stable control of the doping level of the SWCNT network. Counter-intuitively, polymers with electron-withdrawing functional groups lead to a dramatically enhanced n-branch in their transfer curve. Specifically, SWCNT TFTs with poly (vinylidene fluoride) coating show an n-type mobility up to 61 cm2/Vs, with a decent on/off ratio and small hysteresis. The inverters constructed by connecting two ambipolar TFTs demonstrate high gain but with certain voltage loss. P-type or n-type doping from polymer coating layers could suppress unnecessary n- or p-branches, shift the threshold voltage and optimize the performance of these inverters to realize rail-to-rail switching. Similar devices also demonstrate interesting antiambipolar performance with tunable on and off voltage when tested in a different configuration. Full article
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15 pages, 3126 KiB  
Article
Enhancing the Stability and Mobility of TFTs via Indium–Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient
by Seong-Hwan Lim, Dong-Gyun Mah and Won-Ju Cho
Nanomaterials 2024, 14(15), 1252; https://doi.org/10.3390/nano14151252 - 26 Jul 2024
Cited by 5 | Viewed by 2171
Abstract
This study demonstrates a significant enhancement in the performance of thin-film transistors (TFTs) in terms of stability and mobility by combining indium–tungsten oxide (IWO) and zinc oxide (ZnO). IWO/ZnO heterojunction structures were fabricated with different channel thickness ratios and annealing environments. The IWO [...] Read more.
This study demonstrates a significant enhancement in the performance of thin-film transistors (TFTs) in terms of stability and mobility by combining indium–tungsten oxide (IWO) and zinc oxide (ZnO). IWO/ZnO heterojunction structures were fabricated with different channel thickness ratios and annealing environments. The IWO (5 nm)/ZnO (45 nm) TFT, annealed in O2 ambient, exhibited a high mobility of 26.28 cm2/V·s and a maximum drain current of 1.54 μA at a drain voltage of 10 V, outperforming the single-channel ZnO TFT, with values of 3.8 cm2/V·s and 28.08 nA. This mobility enhancement is attributed to the formation of potential wells at the IWO/ZnO junction, resulting in charge accumulation and improved percolation conduction. The engineered heterojunction channel demonstrated superior stability under positive and negative gate bias stresses compared to the single ZnO channel. The analysis of O 1s spectra showed OI, OII, and OIII peaks, confirming the theoretical mechanism. A bias temperature stress test revealed superior charge-trapping time characteristics at temperatures of 25, 55, and 85 °C compared with the single ZnO channel. The proposed IWO/ZnO heterojunction channel overcomes the limitations of the single ZnO channel and presents an attractive approach for developing TFT-based devices having excellent stability and enhanced mobility. Full article
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10 pages, 3346 KiB  
Article
Correlation between CO2 Sensitivity and Channel-Layer Thickness in In2O3 Thin-Film Transistor Gas Sensors
by Ayumu Nodera, Ryota Kobayashi, Tsubasa Kobayashi and Shinya Aikawa
Electronics 2024, 13(10), 1947; https://doi.org/10.3390/electronics13101947 - 16 May 2024
Cited by 1 | Viewed by 1916
Abstract
CO2 monitoring is important for achieving net-zero emissions. Here, we report on a CO2 gas sensor based on an In2O3 thin-film transistor (TFT), which is expected to realize both low-temperature operation and high sensitivity. The effect of channel [...] Read more.
CO2 monitoring is important for achieving net-zero emissions. Here, we report on a CO2 gas sensor based on an In2O3 thin-film transistor (TFT), which is expected to realize both low-temperature operation and high sensitivity. The effect of channel thickness on TFT performance is well known; however, its effect on CO2 sensitivity has not been fully investigated. We fabricated In2O3 TFTs of various thicknesses to evaluate the effect of channel thickness on CO2 sensitivity. Consequently, TFT gas sensors with thinner channels exhibited higher CO2 sensitivity. This is because the surface effect is more prominent for a thinner film, suggesting that charge transfer between gas molecules and the channel surface through gas adsorption has a significant impact on changes in the TFT parameters in the subthreshold region. The results showed that the In2O3 TFT in thin channels is a promising candidate for CO2-sensitive TFT gas sensors and is useful for understanding an effect of gas adsorption in oxide TFTs with a very thin channel as well. Full article
(This article belongs to the Special Issue Feature Papers in Semiconductor Devices)
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12 pages, 3623 KiB  
Article
Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors
by Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim and Jin-Hyuk Bae
Nanomaterials 2024, 14(5), 466; https://doi.org/10.3390/nano14050466 - 4 Mar 2024
Cited by 4 | Viewed by 2799
Abstract
The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (VTH) and its origin [...] Read more.
The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (VTH) and its origin were analyzed by understanding the roles of slow and fast traps in solution-processed oxide TFTs. To control the initial VTH of oxide TFTs, the indium oxide (InOx) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor. The concentration of oxygen vacancies decreased as the Al doping concentration increased, causing a positive VTH shift in the InOx TFTs. The VTH shift (∆VTH) caused by PBS increased exponentially when VTH was increased, and a distinct tendency was observed as the gate bias stress increased due to a high vertical electric field in the oxide dielectric. In addition, the recovery behavior was analyzed to reveal the influence of fast and slow traps on ∆VTH by PBS. Results revealed that the effect of the slow trap increased as the VTH moved in the positive direction; this occured because the main electron trap location moved away from the interface as the Fermi level approached the conduction band minimum. Understanding the correlation between VTH and PBS instability can contribute to optimizing the fabrication of oxide TFT-based circuits for electronic applications. Full article
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11 pages, 2452 KiB  
Article
Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability
by Xuan Zhang and Sung-Woon Cho
Micromachines 2024, 15(2), 193; https://doi.org/10.3390/mi15020193 - 27 Jan 2024
Viewed by 2188
Abstract
To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is [...] Read more.
To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thickness engineering of InZnO semiconductors was easily performed via repeated solution coating and annealing. The thickness-controlled InZnO films were then applied as channel regions, which were fabricated with almost identical film quality, gate dielectric/channel interface, and back-channel conditions. However, excellent operational stability and electrical performance suitable for oxide TFT backplane was only achieved using an 8 nm thick InZnO film. In contrast, the ultrathin and thicker films exhibited electrical performances that were either very resistive (high positive VTh and low on-current) or excessively conductive (high negative VTh and high off-current). This investigation confirmed that the quality of semiconductor materials, solution process design, and structural parameters, including the dimensions of the channel layer, must be carefully designed to realize high-performance and high-stability oxide TFTs. Full article
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11 pages, 5555 KiB  
Article
355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors
by Sang Yeon Park, Younggon Choi, Yong Hyeok Seo, Hojun Kim, Dong Hyun Lee, Phuoc Loc Truong, Yongmin Jeon, Hocheon Yoo, Sang Jik Kwon, Daeho Lee and Eou-Sik Cho
Micromachines 2024, 15(1), 103; https://doi.org/10.3390/mi15010103 - 5 Jan 2024
Cited by 5 | Viewed by 3285
Abstract
Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various [...] Read more.
Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various laser powers. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser powers ranging from 54 to 120 mW. The energy band gap and work function of a-IGZO extracted from the transmittance and ultraviolet photoelectron spectroscopy (UPS) measurement data confirm that different energy band structures for the ITO electrode/a-IGZO channel were established depending on the laser annealing conditions. Based on these observations, the electron injection mechanism from ITO electrodes to a-IGZO channels was analyzed. The results show that the selective laser annealing process can improve the electrical performance of the a-IGZO TFTs without any thermal damage to the substrate. Full article
(This article belongs to the Special Issue Wearable Organic Electronics and Applications)
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21 pages, 8312 KiB  
Review
Active-Matrix Array Based on Thin-Film Transistors Using Emerging Materials for Application: From Lab to Industry
by Seongjae Kim and Hocheon Yoo
Electronics 2024, 13(1), 241; https://doi.org/10.3390/electronics13010241 - 4 Jan 2024
Cited by 4 | Viewed by 5345
Abstract
The active-matrix technology incorporates a transistor to exert precise control over each pixel within a pixel array, eliminating the issue of crosstalk between neighboring pixels that is prevalent in the passive-matrix approach. Consequently, the active-matrix method facilitates the realization of high-resolution arrays, and [...] Read more.
The active-matrix technology incorporates a transistor to exert precise control over each pixel within a pixel array, eliminating the issue of crosstalk between neighboring pixels that is prevalent in the passive-matrix approach. Consequently, the active-matrix method facilitates the realization of high-resolution arrays, and this inherent advantage has propelled its widespread adoption, not only in display applications but also in diverse sensor arrays from lab to industry. In this comprehensive review, we delve into instances of active-matrix arrays utilizing thin-film transistors (TFTs) that leverage emerging materials such as organic semiconductors, metal oxide semiconductors, two-dimensional materials, and carbon nanotubes (CNTs). Our examination encompasses a broad classification of active-matrix research into two main categories: (i) displays and (ii) sensors. We not only assess the performance of TFTs based on emerging materials within the active-matrix framework, but also explore the evolving trends and directions in active-matrix-based displays and sensors. Full article
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