Search Results (8)

Modern biomedicine frequently contextualizes disease around isolated molecular or organ-specific mechanisms, but numerous chronic diseases, including Alzheimer’s disease, multiple sclerosis, depression, diabetes, and sepsis, share common trajectories of systemic destabilization. An increasing body of evidence indicates that health is not a property of single organs but the emergent property of interdependent feedback networks linking the microbiome, endocannabinoidome, neuroimmune system, and metabolic regulators. We propose the Endocannabinoid–Microbiota–Neuroimmune Super-System (EMN-S) as an evolutionarily conserved conceptual model that describes how these fields of influence reciprocally interact through feedback control. The microbial communities constituting the EMN-S encode environmental and dietary inputs, endocannabinoid signaling serves as an integrative regulator that synchronizes neural and immune activity, and neuroimmune circuits effectuate adaptive behaviors that alter microbiotal and lipid ecosystems. This review formalizes the EMN-S, contending that it is a unitary and cohesive model of physiological resilience, as well as offering a framework for precision feedback therapeutics. We describe how three mechanisms—encoder drift, integrator detuning, and executor overutilization—convert stabilizing negative feedback into runaway feedback cascades that underlie chronic, recurrent, and multisystemic disease. We then specify the EMN-S signature—integrated microbiome, lipidomic, and immune readouts—as an early indicator of resilience collapse and prospective preclinical state. Finally, we recapitulate the potential of AI-driven digital twins to illuminate feedback collapse, predict tipping points, and direct closed-loop intervention and treatments to restore dynamic equilibrium. By anchoring complexity in concrete and measurable feedback principles, the EMN-S shifts focus to investigate pathophysiology as opposed to reductionist lesion models of systemic derangements and embraces a systemic, empirically testable theory of stability. Full article

This paper reviews various design approaches for sensing schemes that utilize silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs) for pH-sensing applications. SiNW ISFETs offer advantageous characteristics, including a high surface-to-volume ratio, fast response time, and suitability for integration with complementary metal oxide semiconductor (CMOS) technology. This review focuses on SiNW ISFET-based biosensors in three key aspects: (1) major fabrication processes and device structures; (2) theoretical analysis of key performance parameters in readout circuits such as sensitivity, linearity, noise immunity, and output range in different system configurations; and (3) an overview of existing readout circuits with quantitative evaluations of N-type and P-type current-mirror-based circuits, highlighting their strengths and limitations. Finally, this paper proposes a modified N-type readout scheme integrating an operational amplifier with a negative feedback network to overcome the low sensitivity of conventional N-type circuits. This design enhances gain control, linearity, and noise immunity while maintaining stability. These advancements are expected to contribute to the advancement of the current state-of-the-art SiNW ISFET-based readout circuits. Full article

In recent advancements, the traditional von Neumann architecture has been challenged by the computational needs of AI. This is due to its high power and data transfer costs. As a solution, the computing-in-memory (CIM) architecture, which combines storage and computation, has gained attention for its superior computational power and energy efficiency. Within CIM, using resistive random access memory (RRAM) arrays, the readout circuit, which converts analog outputs from multiply–accumulate operations into digital signals, faces limitations due to its area and power consumption. There are mainly two types of CIM readout circuits for analog types: the traditional ADC type and the non-traditional type. This paper presents two types of readout circuit designs. The first is a low-power, compact successive approximation register (SAR) analog-to-digital converter (ADC) readout circuit. The core circuit is an 8-bit SAR ADC operating at 70 MS/s. It incorporates a linearity-improved bootstrapped switch to minimize leakage and enhance linearity, whose spurious-free dynamic range (SFDR) has been improved by 10.1 dB from 76.78 dB to 86.88 dB, and whose signal-to-noise and distortion ratio (SNDR) has increased by 4.56 dB from 75.13 dB to 79.69 dB. The delay of a transconductance-enhanced dynamic comparator is reduced from 184 ps to 149 ps, presenting a performance improvement of approximately 20%. Concurrently, the energy consumption decreased from 178 μm to 132 μm, attaining an improvement of roughly 26%. A “sandwich” capacitor structure is used that reduces the overall area of the layout. After layout and post-simulation, this circuit occupies only 49.6 μm × 51.5 μm, consumes 553 μW power, has a SINAD of 46.22 dB, and has an SFDR of 57.21 dB. The second is a current controlled oscillator (CCO)-type readout circuit, which comprises a CCO oscillator with low process-sensitivity. The readout circuit also utilizes an op-amp and current mirrors for a negative feedback loop, ensuring a constant voltage across the RRAM arrays. The frequency generated through the CCO is controlled by the current, and quantified by a counter, supporting different weights quantification per ReRAM column without additional digital weighting. This circuit achieves 95-level resolution, 5.2 μs delay, and an average consumption of 183.1 μW. A comparative analysis highlights that traditional ADC readout circuits offer high resolution and speed but are limited by their high power and area costs, often overshadowing CIM arrays’ benefits. Thus, for applications with more lenient resolution and speed requirements, non-traditional readout circuits present considerable advantages. Full article

Magnetoelectric (ME) sensors cannot effectively detect broadband magnetic field signals due to their narrow bandwidth, and existing readout circuits are unable to vary the bandwidth of the sensors. To expand the bandwidth, this paper introduces a negative-feedback readout circuit, fabricated by introducing a negative-feedback compensation circuit based on the direct readout circuit of the ME sensor. The negative-feedback compensation circuit contains a current amplifier, a feedback resistor, and a feedback coil. For this purpose, a Metglas/PVDF/Metglas ME sensor was prepared. Experimental measurements show that there is a six-fold difference between the maximum and minimum values of the ME voltage coefficients in the 6–39 kHz frequency band for the ME sensor without the negative-feedback compensation circuit when the sensor operates at the optimal bias magnetic field. However, the ME voltage coefficient in this band remains stable, at 900 V/T, after the charge amplification of the direct-reading circuit and the negative-feedback circuit. In addition, experimental results show that this negative-feedback readout circuit does not increase the equivalent magnetic noise of the sensor, with a noise level of 240 pT/√Hz in the frequency band lower than 25 kHz, 63 pT/√Hz around the resonance frequency of 30 kHz, and 620 pT/√Hz at 39 kHz. This paper proposes a negative-feedback readout circuit based on the direct readout circuit, which greatly increases the bandwidth of ME sensors and promotes the widespread application of ME sensors in the fields of broadband weak magnetic signal detection and DBS electrode positioning. Full article

This paper presents a low-noise potentiostat readout circuit with a chopper fully differential difference amplifier (FDDA) for glucose monitoring. Glucose monitoring is necessary for the early diagnosis of diabetes complications and for health management. Ammeter electrochemical sensors are widely used for glucose detection, and in general, a three-electrode structure of a reference electrode (RE), a counter electrode (CE), and a working electrode (WE) is implemented with a potentiostat structure. A low-noise characteristic of the readout circuit is essential for highly accurate glucose monitoring. The chopping technique can reduce low-frequency noises such as 1/f noise and can achieve the required low-noise characteristic. The proposed potentiostat readout circuit is based on a low-noise chopper FDDA with a class-AB output stage. The implementation of the chopper FDDA scheme of the potentiostat readout circuit can decrease the number of amplifiers in the control part of the potentiostat, with reduced power consumption and a wide dynamic output range. The negative feedback loop of the inverting amplifier scheme with the FDDA maintains the voltage between the WE and RE constants. The negative feedback loop tracks the reference voltage of the RE with an input voltage of the WE. The proposed potentiostat readout circuit is designed in the standard 0.18 µm CMOS process, and the simulated current consumption is 48.54 μA with a 1.8 V power supply. The simulated input-referred noise level was 8.53 pArms. Full article

This paper presents a high-linearity high-resolution time-of-flight (ToF) linear-array digital image sensor using a time-domain negative feedback technique. A coarse ToF measurement loop uses a 5-bit digital-to-time converter (DTC) and a delayed gating-pulse generator for time-domain feedback to find the zero of the difference between ToF and the digital estimate of the gating-pulse delay while maintaining a constant operating point of the analog readout circuits. A fine ToF measurement uses a delta-sigma modulation (DSM) loop using the time-domain feedback with a bit-stream signal form. Because of the self-contained property of the DSM for low distortion and noise exploited by the oversampling signal processing, the proposed technique provides high-linearity and high-range resolution in the fine ToF measurement. A prototype ToF sensor of 16.8 × 16.8 μm² two-tap pixels and fabricated in a 0.11 μm (1P4M) CMOS image sensors (CIS) process achieves +0.9%/−0.47% maximum nonlinearity error and a resolution of 0.24 mm (median) for the measurement range of 0–1.05 m. The ToF sensor produces an 11-bit fully digital output with a ToF measurement time of 22.4 ms. Full article

With one operational amplifier (op-amp) in negative feedback, the traditional zero potential circuit could access one element in the two-dimensional (2-D) resistive sensor array with the shared row-column fashion but it suffered from the crosstalk problem for the non-scanned elements’ bypass currents, which were injected into array’s non-scanned electrodes from zero potential. Firstly, for suppressing the crosstalk problem, we designed a novel improved zero potential circuit with one more op-amp in negative feedback to sample the total bypass current and calculate the precision resistance of the element being tested (EBT) with it. The improved setting non-scanned-electrode zero potential circuit (S-NSE-ZPC) was given as an example for analyzing and verifying the performance of the improved zero potential circuit. Secondly, in the S-NSE-ZPC and the improved S-NSE-ZPC, the effects of different parameters of the resistive sensor arrays and their readout circuits on the EBT’s measurement accuracy were simulated with the NI Multisim 12. Thirdly, part features of the improved circuit were verified with the experiments of a prototype circuit. Followed, the results were discussed and the conclusions were given. The experiment results show that the improved circuit, though it requires one more op-amp, one more resistor and one more sampling channel, can access the EBT in the 2-D resistive sensor array more accurately. Full article

For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e^- for the simple integration CMS and 75 dB and 2.2 e^- for the folding integration CMS, respectively, are obtained. Full article