Search Results (28)

Due to high responsivity and wide spectral sensitivity, metal halide perovskite photodiodes have a wide range of applications in the fields of visible light and near-infrared photodetection. Specific detectivity is an important quality factor for high-performance perovskite-based photodiodes, while one of the keys to achieving high detectivity is to reduce dark current. Here, 3-fluoro phenethylammonium iodide (3F-PEAI) was used to passivate the perovskite surface and form the two-dimensional (2D) perovskite on the three-dimensional (3D) perovskite surface. The as-fabricated passivated perovskite photodiodes with 2D/3D hybrid-dimensional perovskite heterojunctions showed two orders of magnitude smaller dark current, larger open circuit voltage and faster photoresponse, when compared to the control perovskite photodiodes. Meanwhile, it maintained almost identical photocurrent, achieving a high specific detectivity up to 2.4 × 10¹² Jones and over the visible-near-infrared broadband photodetection. Notably, the champion photoresponsivity value of 0.45 A W⁻¹ was achieved at 760 nm. It was verified that the 2D capping layers were able to suppress trap states and accelerate photocarrier collection. This work demonstrates strategic passivation of surface iodine vacancies, offering a promising pathway for developing ultrasensitive and low-power consumption photodetectors based on metal halide perovskites. Full article

The near-infrared photodetection of monolayer MoS₂ can be achieved using upconverted nanoparticles (UCNPs). Herein, we demonstrated that gold nanorods (Au NRs) further enhanced the near-infrared photoresponsivity of a hybrid device via the surface plasmon enhancement of the localized field. We synthesized a three-layer device comprising Au NRs, UCNPs (NaYF₄:Yb³⁺, Er³⁺), and monolayer MoS₂, and examined its photoelectric characteristics using laser irradiation with varying power densities at 980 nm, the excitation wavelength of UCNPs. Compared with a device without Au NRs, the photoelectric response of the three-layer device was greatly improved at 5 V bias, and photoresponsivity was increased at visible wavelengths (450, 532, and 635 nm). This study contributes to the knowledge of two-dimensional materials for the development of hybrid photoelectronic devices. Full article

Photodetectors converting light into electrical signals are crucial in various applications. The pursuit of high-performance photodetectors with high sensitivity and broad spectral range simultaneously has always been challenging in conventional semiconductor materials. Graphene, with its zero bandgap and high electron mobility, is an attractive candidate, but its low light absorption coefficient restricts its practical application in light detection. Integrating graphene with light-absorbing materials like PbS quantum dots (QDs) can potentially enhance its photodetection capabilities. Here, this work presents a broadband photodetector with enhanced sensitivity based on a graphene–PbS QD heterostructure. The device leverages the high carrier mobility of graphene and the strong light absorption of PbS QDs, achieving a wide detection range from ultraviolet to near-infrared. Employing a simple spinning method, the heterostructure demonstrates ultrahigh responsivity up to the order of 10⁷ A/W and a specific detectivity on the order of 10¹³ Jones, showcasing significant potential for photoelectric applications. Full article

In recent years, 2D materials and their heterostructures have started to offer an ideal platform for high-performance photodetection devices. In this work, a highly responsive, self-powered photodetector based on PtSe₂/MoS₂ van der Waals heterostructure is demonstrated. The device achieves a noteworthy wide band spectral response from visible (405 nm) range to the near infrared region (980 nm). The remarkable photoresponsivity and external quantum efficiency up to 4.52 A/W, and 1880% are achieved, respectively, at 405 nm illumination with fast response time of 20 ms. In addition, the photodetector exhibits a decent photoresponsivity of 33.4 mA/W at zero bias, revealing the photodetector works well in the self-driven mode. Our work suggests that a PtSe₂/MoS₂ heterostructure could be a potential candidate for the high-performance photodetection applications. Full article

Contactless and label-free detection of urea content in aqueous solutions is of great interest in chemical, biomedical, industrial, and automotive applications. In this work, we demonstrate a compact and low-cost instrumental configuration for label-free, reagent-free, and contactless detection of urea dissolved in water, which exploits the absorption properties of urea in the near-infrared wavelength region. The intensity of the radiation transmitted through the fluid under test, contained in a rectangle hollow glass tubing with an optical pathlength of 1 mm, is detected in two spectral bands. Two low-cost, low-power LEDs with emission spectra centered at λ = 1450 nm and λ = 2350 nm are used as readout sources. The photodetector is positioned on the other side of the tubing, in front of the LEDs. The detection performances of a photodiode and of a thermal optical power detector have been compared, exploiting different approaches for LED driving current modulation and photodetected signal processing. The implemented detection system has been tested on urea–water solutions with urea concentrations from 0 up to 525 mg/mL as well as on two samples of commercial diesel exhaust fluid (“AdBlue™”). Considering the transmitted intensity in presence of the urea–water solution, at λ = 1450 nm and λ = 2350 nm, normalized to the transmitted intensity in presence of water, we demonstrate that their ratio is linearly related to urea concentration on a wide range and with good sensitivity. Full article

Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing industrial needs pose challenges for the fabrication cycle time and fabrication cost. In this work, we proposed an improved fabrication process for ultra-deep mesa-structured silicon APDs for photodetection in the visible and near-infrared wavelengths with improved performance and reduced costs. The improved process reduced the complexity through significantly reduced photolithography steps, e.g., half of the steps of the existing process. Additionally, single ion implantation was performed under low energy (lower than 30 keV) to further reduce the fabrication costs. Based on the improved ultra-concise process, a deep-mesa silicon APD with a 140 V breakdown voltage was obtained. The device exhibited a low capacitance of 500 fF, the measured rise time was 2.7 ns, and the reverse bias voltage was 55 V. Moreover, a high responsivity of 103 A/W@870 nm at 120 V was achieved, as well as a low dark current of 1 nA at punch-through voltage and a maximum gain exceeding 1000. Full article

The excellent performance of semiconductor nanocrystals as sensitizers for photothermal therapy (PTT) has attracted the attention of many researchers; however, they are hindered by limited bandwidth and complex synthesis. To overcome these limitations, starting with an initial determination of photothermal conductivity, we synthesized and designed molybdenum and Cys-MoO_3−x nanoparticles (NPs) for use in the minimally invasive treatment of papillary thyroid carcinoma (PTC), as the NPs are coated only with cysteine molecules. The obtained Cys-MoO₂ NPs were used as a PTT reaction drug for topical application to PTC cells. The use of near-infrared photoconductive PTT in combination with low-toxicity biological chemotherapy reached a 90% efficacy for cancer treatment in vitro. The conducted experiments intuitively demonstrate that non-toxic Cys-MoO₂ NPs are lethal to the cancer cells under visual (VL, 405 nm) and near-infrared (NIR, 808 nm) laser irradiation and can be precisely controlled. Therefore, this study provides a powerful, safe, and easily modified NP platform for photo-triggered PTC elimination with broad application prospects. Assessment of the ideal damage range indicates a high degree of controllability, allowing the tumor to be precisely targeted while minimizing damage to the surrounding healthy tissue. In conclusion, this study provides a convenient, safe, and powerful NP platform for the near-infrared photo-controlled PTT of PTC cells, which has broad application prospects for the elimination of PTC and other types of cancer. Full article

Tin monoselenide (SnSe), which belongs to group IV–VI monochalcogenides, has obtained significant attention in the field of photodetection owing to its ultrahigh carrier mobilities. However, the great challenges of preparing high-quality films and high-performance devices still need to be conquered. Herein, high-density continuous SnSe films were deposited on a Si substrate using magnetron sputtering technology, and a self-driven photovoltaic-type broadband photodetector from the visible light range (VIS) to the near-infrared (NIR) range based on SnSe/Si heterojunction was constructed. Owing to its high carrier mobility, narrow band gap structure, and strong internal electric field, the SnSe/Si heterojunction device exhibits an ultrafast response and high responsivity (R), which achieves a wide spectral response of 405–980 nm. Under zero bias voltage, the greatest R and detectivity (D*) of the heterojunction were 704.6 mA/W and 3.36 × ${10}^{11}$ Jones at 405 nm. Furthermore, the device had a fast response time (rise time) of 20.4 μs at 980 nm of illumination. This work provides a new strategy for the fabrication of high-performance, low-cost, and self-driven photodetectors. Full article

We report on the near-infrared (NIR) photoresponse of a micropatterned Ge/Si quantum dot (QD) pin photodiode at different angles of radiation incidence. The photon-trapping hole array was etched through the n+-type top contact layer to reach the buried QDs. The normal-incidence responsivity was observed to be resonantly increased at wavelengths of 1.4, 1.7, and 1.9 $\mathsf{\mu }$m by factors of 40, 33, and 30, respectively, compared with the reference detector without holes. As the incident angle $\theta$ increases, the resonance peaks are disappeared and at $\theta >{40}^{\circ }$ a new resonance with a $25\times$ enhancement arises at a wavelength of 1.8 $\mathsf{\mu }$m. Simulation of the near-field intensity, Poynting vector distribution and wave polarization showed that at small $\theta$, the strong electric field is primarily localized under the air holes (1.4 $\mathsf{\mu }$m, TM mode) or between the holes (1.7 and 1.9 $\mathsf{\mu }$m, TE modes) inside the region occupied by QDs, resulting in the strong NIR photocurrent. At large $\theta$, the dominant resonance detected at 1.8 $\mathsf{\mu }$m is the result of coupling between the TE and TM modes and formation of a mixed near-field state. Full article

Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS₂/Sb₂Te₃ vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W⁻¹, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction’s band structure. This subsequently shifts the detector’s optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits. Full article

The increasing interest in two-dimensional materials with unique crystal structures and novel band characteristics has provided numerous new strategies and paradigms in the field of photodetection. However, as the demand for wide-spectrum detection increases, the size of integrated systems and the limitations of mission modules pose significant challenges to existing devices. In this paper, we present a van der Waals heterostructure photodetector based on Ta₂NiSe₅/WSe₂, leveraging the inherent characteristics of heterostructures. Our results demonstrate that this detector exhibits excellent broad-spectrum detection ability from the visible to the infrared bands at room temperature, achieving an extremely high on/off ratio, without the need for an external bias voltage. Furthermore, compared to a pure material detector, it exhibits a fast response and low dark currents (~3.6 pA), with rise and fall times of 278 μs and 283 μs for the response rate, respectively. Our findings provide a promising method for wide-spectrum detection and enrich the diversity of room-temperature photoelectric detection. Full article

An oblique angle and polarization insensitive metamaterial absorber (MA) are highly desired for the visible and infrared optical applications like, wave energy harvesting, optical filters, and detecting thermal leaks and electrical defects. In this paper, a multi-layered MA consisting of two layers of tungsten resonators on a silicon dioxide substrate, coated with additional SiO₂ materials is investigated. The unit cell size of the MA is 0.5λ × 0.5λ × 0.8λ, at the lowest wavelength. The proposed MA offers an average absorption of 92% from 400 nm to 2400 nm with stable oblique incident angles up to 45°. The structure also achieves polarization insensitivity at the entire visible and near-infrared spectrum. Moreover, the MA is found highly compatible for solar absorber applications with high y A_AM1.5. The structure is also compatible for filter application in optical communication system by modifying the plasmonic nano structure. The modified structure can block the wavelengths of the visible band (450 nm to 800 nm) and transmit optical communication bands (800 to 1675 nm). These versatile absorption and filtering performance make the proposed design highly potential for solar energy harvesting, photodetection, thermal imaging, photo-trapping, and optical communications applications. Full article

Infrared detection technology has important applications in laser ranging, imaging, night vision, and other fields. Furthermore, recent studies have proven that hot carriers which are generated by surface plasmon decay can be exploited for photodetection to get beyond semiconductors’ bandgap restriction. In this study, silicon nanopillars (NPs) and gold film at the top and bottom of silicon nanopillars were designed to generate surface plasmon resonance and Fabry–Perot resonance to achieve perfect absorption. The absorption was calculated using the Finite Difference Time Domain (FDTD) method, and factors’ effects on resonance wavelength and absorption were examined. Here we demonstrate how this perfect absorber can be used to achieve near-unity optical absorption using ultrathin plasmonic nanostructures with thicknesses of 15 nm, smaller than the hot electron diffusion length. Further study revealed that the resonance wavelength can be redshifted to the mid-infrared band (e.g., 3.75 μm) by increasing the value of the structure parameters. These results demonstrate a success in the study of polarization insensitivity, detection band adjustable, and efficient perfect absorption infrared photodetectors. Full article

Colloidal quantum dots (CQDs) have a unique advantage in realizing near-infrared (NIR) photodetection since their optical properties are readily tuned by the particle size, but CQD-based photodetectors (QPDs) presently show a high dark current density (J_d) and insufficient dynamic characteristics. To overcome these two problems, we synthesized and introduced two types of conjugated polymers (CPs) by replacing the p-type CQD layer in the QPDs. The low dielectric constant and insulating properties of CPs under dark conditions effectively suppressed the J_d in the QPDs. In addition, the energy-level alignment and high-hole mobility of the CPs facilitated hole transport. Therefore, both the responsivity and specific detectivity were highly enhanced in the CP-based QPDs. Notably, the dynamic characteristics of the QPDs, such as the −3 dB cut-off frequency and rising/falling response times, were significantly improved in the CP-based QPDs owing to the sizable molecular ordering and fast hole transport of the CP in the film state as well as the low trap density, well-aligned energy levels, and good interfacial contact in the CP-based devices. Full article

Narrow-bandgap germanium–tin (GeSn) is employed to fabricate metal–semiconductor–metal (MSM) near-infrared photodetectors with low-dark currents and high responsivity. To reduce the dark current, the SiO₂ layer is inserted in between the metal and semiconductor to increase the barrier height, albeit at the expense of photocurrent reduction. To couple more incident light into the absorption layer to enhance the responsivity, the distributed Bragg reflectors (DBRs) are deposited at the bottom of the GeSn substrate while placing the anti-reflection layer on the surface of the absorption layer. With the interdigital electrode spacing and width, both set at 5 µm and with 1 V bias applied, it is found the responsivities of the generic MSM control sample detector, the MSM with DBR, and the MSM with AR layer are 0.644 A/W, 0.716 A/W, and 1.30 A/W, respectively. The corresponding specific detectivities are 8.77 × 10¹⁰, 1.11 × 10¹¹, and 1.77 × 10¹¹ cm·Hz^1/2/W, respectively. The measurement data show that these designs effectively enhance the photocurrent and responsivity. At 1 V bias voltage, normalized responsivity evinces that the photodetection range has been extended from 1550 nm to over 2000 nm, covering the entire telecommunication band. Incorporating GeSn as a sensing layer offers one of the new alternative avenues for IR photodetection. Full article