Search Results (11)

We demonstrate substrate-emitting resonant cavity interband cascade light emitting diodes (RCICLEDs) based on a single distributed Bragg reflector (DBR). These devices operate in continuous wave mode at room temperature. Compared to standard ICLEDs without a cavity, we achieved an 89% reduction in the emission spectrum width, as indicated by the Full Width Half Maximum (FWHM) of 70 nm. Furthermore, we observed far-field narrowing and improved thermal stability. A single DBR configuration allows the cavity length to be adjusted by adding refractive index-matched material to the top of the epitaxial structure after epitaxial growth. This modification effectively shifts the cavity response towards longer wavelengths. We fabricated emitters comprising two cavities of different lengths, resulting in the emission of two distinct spectral lines that can be independently controlled. This dual-color capability enables one of the emission lines to serve as a built-in reference channel, making these LEDs highly suitable for cost-effective gas-sensing applications. Full article

InAsPSb is an emerging material used as an efficient barrier in quantum well structures, and the resulting devices can be employed in the mid-infrared region of the electromagnetic spectrum. This study investigates the photoreflectance spectra of two InAsPSb/InGaAs multi-quantum well light-emitting diodes with 6 and 15 quantum well periods. The photoreflectance of the samples was analyzed at various temperatures and excitation powers. By examining the Franz-Keldysh oscillations in the spectra, we explored the influence of the number of well layers on the electric field strength in the junction. The results showed that the number of quantum wells can influence the electric field at the junction, potentially impacting the overall performance of the devices. The simulation of the electric field strength aligns with the results of the photoreflectance analysis. This suggests that the field extracted from Franz-Keldysh oscillations characterizes the field inside the multi-quantum wells, offering potential reasons for the observed effects on the number of multi-quantum wells in the field. Full article

SCAM has been expected to be a suitable substrate for GaN blue-light-emitting-diodes (LEDs) and high-power high electron mobility transistors (HEMTs) because of its lower lattice mismatch to GaN than that of the widely used sapphire. Considering both potential device applications, the crystal lattice and optical properties of SCAM substrates were investigated on selected high quality samples. As lattice parameters, the thermal expansion coefficient as well as the lattice constant were extrapolated from room temperature to 2000 °C by using a high temperature X-ray diffraction (XRD) system with the heating unit on a sample stage. The thermal conductance, which is also important for growing bulk SCAM crystals and the operation of devices on the SCAM substrate, was measured. Raman scattering measurements were carried out to better understand crystal lattice characteristics. It was clearly confirmed that prepared SCAM crystals were of high quality. Similar to sapphire, SCAM has the high transparency over the wide wavelength range from ultraviolet to mid-infrared. The refractive index, important for the design of any optical devices, was measured. From these results, it can be said that SCAM is a suitable substrate for nitride devices, especially LEDs and solar cells. Full article

Given the exquisite capability of direct, non-destructive label-free sensing of molecular transitions, IR spectroscopy has become a ubiquitous and versatile analytical tool. IR application scenarios range from industrial manufacturing processes, surveillance tasks and environmental monitoring to elaborate evaluation of (bio)medical samples. Given recent developments in associated fields, IR spectroscopic devices increasingly evolve into reliable and robust tools for quality control purposes, for rapid analysis within at-line, in-line or on-line processes, and even for bed-side monitoring of patient health indicators. With the opportunity to guide light at or within dedicated optical structures, remote sensing as well as high-throughput sensing scenarios are being addressed by appropriate IR methodologies. In the present focused article, selected perspectives on future directions for IR spectroscopic tools and their applications are discussed. These visions are accompanied by a short introduction to the historic development, current trends, and emerging technological opportunities guiding the future path IR spectroscopy may take. Highlighted state-of-the art implementations along with novel concepts enhancing the performance of IR sensors are presented together with cutting-edge developments in related fields that drive IR spectroscopy forward in its role as a versatile analytical technology with a bright past and an even brighter future. Full article

In this paper, we propose a novel, miniaturized non-dispersive infrared (NDIR) CO₂ sensor implemented on a silicon chip. The sensor has a simple structure, consisting of a hollow metallic cylindrical cavity along with access waveguides. A detailed analysis of the proposed sensor is presented. Simulation with 3D ray tracing shows that an integrating cylinder with 4 mm diameter gives an equivalent optical path length of 3.5 cm. The sensor is fabricated using Deep Reactive Ion Etching (DRIE) and wafer bonding. The fabricated sensor was evaluated by performing a CO₂ concentration measurement, showing a limit of detection of ∼100 ppm. The response time of the sensor is only ∼2.8 s, due to its small footprint. The use of DRIE-based waveguide structures enables mass fabrication, as well as the potential co-integration of flip-chip integrated midIR light-emitting diodes (LEDs) and photodetectors, resulting in a compact, low-power, and low-cost NDIR CO₂ sensor. Full article

In this work, performance improvements are described for a low-power consumption non-dispersive infrared (NDIR) methane (CH₄) gas sensor using customised optical thin film bandpass filters (BPFs) centered at 3300 nm. BPFs shape the spectral characteristics of the combined mid-infrared III–V based light emitting diode (LED)/photodiode (PD) light source/detector optopair, enhancing the NDIR CH₄ sensor performance. The BPFs, deposited using a novel microwave plasma-assisted pulsed DC sputter deposition process, provide room temperature deposition directly onto the temperature-sensitive PD heterostructure. BPFs comprise germanium (Ge) and niobium pentoxide (Nb₂O₅) alternating high and low refractive index layers, respectively. Two different optical filter designs are progressed with BPF bandwidths (BWs) of 160 and 300 nm. A comparison of the modelled and measured NDIR sensor performance is described, highlighting the maximised signal-to-noise ratio (SNR) and the minimised cross-talk performance benefits. The BPF spectral stability for various environmental temperature and humidity conditions is demonstrated. Full article

Graphene has impressive features that make it an exceptional material for sophisticated applications in next generation electronics and opto-electronics devices. This peremptory material has attracted researchers’ attention in various fields of recent advancement since its discovery in 2004. Its applied fields are increasing day by day. This two-dimensional material (2D) is using mellifluously for the development in different types of devices in the field of optics, photonics, light emitting diode (LED), medical diagnosis, sensing, and so on. In this review, the relevant optical properties and the applications areas with available results in various fields are discussed. Again, the optical conductivity of strained graphene is reviewed in a wavelength related regime that depends on strain modulus and position with field arrangements. Graphene shows a saturation and reverse saturation process due to the increase of light intensity. In addition, strong absorption is observed from the visible to mid-infrared (MIR) wavelength range. Moreover, the application areas of graphene including optics, photonics, plasmonics, mode-locked laser, optical modulator, etc., and the comparison of various results obtained from different sources are presented. Full article

Optical spectroscopy is increasingly used for cancer diagnostics. Tumor detection feasibility in human kidney samples using mid- and near-infrared (NIR) spectroscopy, fluorescence spectroscopy, and Raman spectroscopy has been reported (Artyushenko et al., Spectral fiber sensors for cancer diagnostics in vitro. In Proceedings of the European Conference on Biomedical Optics, Munich, Germany, 21–25 June 2015). In the present work, a simplification of the NIR spectroscopic analysis for cancer diagnostics was studied. The conventional high-resolution NIR spectroscopic method of kidney tumor diagnostics was replaced by a compact optical sensing device constructively represented by a set of four light-emitting diodes (LEDs) at selected wavelengths and one detecting photodiode. Two sensor prototypes were tested using 14 in vitro clinical samples of 7 different patients. Statistical data evaluation using principal component analysis (PCA) and partial least-squares discriminant analysis (PLS-DA) confirmed the general applicability of the LED-based sensing approach to kidney tumor detection. An additional validation of the results was performed by means of sample permutation. Full article

GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples) or dopant ionization (p-type samples). In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at ~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to ~1 µm at n ~ 10²⁰ cm⁻³ doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1–10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 10¹⁸ cm⁻³ are highly transparent with the absorption coefficient below 3 cm⁻¹ at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range. Full article

Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recently, Fabry-Pérot Quantum Cascade Lasers integrated on silicon provided a 4800 nm light source for mid-infrared (MIR) silicon photonic applications. Distributed feedback (DFB) lasers are appealing for many high-sensitivity chemical spectroscopic sensing applications that require a single frequency, narrow-linewidth MIR source. While heterogeneously integrated 1550 nm DFB lasers have been demonstrated by introducing a shallow surface grating on a silicon waveguide within the active region, no mid-infrared DFB laser on silicon has been reported to date. Here we demonstrate quantum cascade DFB lasers heterogeneously integrated with silicon-on-nitride-on-insulator (SONOI) waveguides. These lasers emit over 200 mW of pulsed power at room temperature and operate up to 100 °C. Although the output is not single mode, the DFB grating nonetheless imposes wavelength selectivity with 22 nm of thermal tuning. Full article

This paper describes development of a novel mid-infrared light emitting diode (LED) and photodiode (PD) light source/detector combination and use within a non-dispersive infrared (NDIR) carbon dioxide gas sensor. The LED/PD based NDIR sensor provides fast stabilisation time (time required to turn on the sensor from cold, warm up, take and report a measurement, and power down again ≈1 second), longevity (>15 years), low power consumption and low cost. Described performance is compatible with “fit and forget” wireless deployed sensors in applications such as indoor air quality monitoring/control & energy conservation in buildings, transport systems, horticultural greenhouses and portable deployment for safety, industrial and medical applications. Fast stabilisation time, low intrinsic power consumption and cycled operation offer typical energy consumption per measurement of mJ’s, providing extended operation using battery and/or energy harvesting strategies (measurement interval of ≈ 2 minutes provides >10 years operation from one AA battery). Specific performance data is provided in relation to measurement accuracy and noise, temperature performance, cross sensitivity, measurement range (two pathlength variants are described covering ambient through to 100% gas concentration), comparison with NDIR utilizing thermal source/pyroelectric light source/detector combination and compatibility with energy harvesting. Semiconductor based LED/PD processing together with injection moulded reflective optics and simple assembly provide a route to low cost high volume manufacturing. Full article