Search Results (143)

The photon spin Hall effect (PSHE) arises from the spin–orbit interaction of light. Metasurfaces enable precise control over the PSHE through their influence. Using electromagnetic simulations as its foundation, this work engineers a metal–insulator–metal (MIM) metasurface for generating vortex beams in the near-infrared band, targeting enhanced modulation of the PSHE. Electromagnetic simulations embed vanadium dioxide (VO₂)—a thermally responsive phase-change material—within the MIM metasurface architecture. Numerical evidence confirms that harnessing VO₂’s insulator–metal-transition-mediated optical switching dynamically tailors spin-dependent splitting in the illuminated MIM-VO₂ hybrid, thereby achieving a significant amplification of the PSHE displacement. Electromagnetic simulations determine the reflection coefficients for both VO₂ phase states in the MIM-VO₂ structure. Computed spin displacements under vortex beam incidence reveal that VO₂’s phase transition couples to the MIM’s top metal and dielectric layers, modifying reflection coefficients and producing phase-dependent PSHE displacements. The simulation results show that the displacement change of the PSHE before and after the phase transition of VO₂ reaches 954.7 µm, achieving a significant improvement compared with the traditional layered structure. The dynamic modulation mechanism of the PSHE based on the thermal–optical effect has been successfully verified. Full article

In this research work, two distinct types of three-dimensional (3D) capacitors were successfully fabricated, each with its own unique features and advantages. The first type of capacitor is centered around a 3D nanoporous structure. This structure is formed on a nickel substrate through anodic oxidation. After undergoing high-temperature thermal oxidation, a monolithic Ni-NiO-Pt metal–insulator–metal (MIM) capacitor with a nanoporous dielectric architecture is achieved. Structurally, this innovative design brings about several remarkable benefits. Due to the nanoporous structure, it has a significantly increased surface area, which can effectively store more charges. As a result, it exhibits an equivalent capacitance density of 69.95 nF/cm², which is approximately 18 times higher than that of its planar, non-porous counterpart. This high capacitance density enables it to store more electrical energy in a given volume, making it highly suitable for applications where miniaturization and high energy storage in a small space is crucial. The second type of capacitor makes use of Through-Glass Via (TGV) technology. This technology is employed to create an interdigitated blind-via array within a glass substrate, attaining an impressively high aspect ratio of 22.5:1 (with a via diameter of 20 μm and a depth of 450 μm). By integrating atomic layer deposition (ALD), a conformal interdigital electrode structure is realized. Glass, as a key material in this capacitor, has outstanding insulating properties. This characteristic endows the capacitor with a high breakdown field strength exceeding 8.2 MV/cm, corresponding to a withstand voltage of 5000 V. High breakdown field strength and withstand voltage mean that the capacitor can handle high-voltage applications without breaking down easily, which is essential for power-intensive systems like high-voltage power supplies and some high-power pulse-generating equipment. Moreover, due to the low-loss property of glass, the capacitor can achieve an energy conversion efficiency of up to 95%. Such a high energy conversion efficiency ensures that less energy is wasted during the charge–discharge process, which is highly beneficial for energy-saving applications and systems that require high-efficiency energy utilization. Full article

In this study, we analyzed the electrical characteristics of metal–insulator–metal (MIM) capacitors fabricated with reference to insulator (Si_xN_y) thickness and deposition condition. Si_xN_y thicknesses of 650 Å, 500 Å, and 400 Å were used with four different conditions designated as MIM (N content 1.49), NEWMIM (N content 28.1), DAMANIT (N content 1.43), and NIT (N content 0.30), deposited by controlling gas flow and RF power as a function of N content. Capacitor characteristics were evaluated mainly in terms of the relationship between leakage current and breakdown voltage (BV). Current–voltage (I–V) characterizations revealed that a higher N–H/Si–H ratio effectively suppressed trap-assisted leakage conduction and enhanced dielectric robustness under high-field stress. Among the tested conditions, the NEWMIM process demonstrated the most favorable electrical performance with highest N contents. The MIM and NEWMIM conditions proved most effective among the evaluated processes, achieving sufficient BV values (>20 V) for reliable MIM capacitor operation and proposing a process optimization framework for integrating medium-density Si_xN_y–based MIM capacitors (2 fF/µm²) with sufficiently high BV values in the future. Full article

Dynamic random-access memory (DRAM) is a vital component in modern computing systems. Enhancing memory performance requires maximizing capacitor capacitance within DRAM cells, which is achieved using high-k dielectric materials deposited as thin, uniform films via atomic layer deposition (ALD). Precise film deposition that minimizes electronic defects caused by charged vacancies is essential for reducing leakage current and ensuring high dielectric strength. In this study, we fabricated metal–insulator–metal (MIM) capacitors in high-aspect-ratio trench structures using remote plasma ALD (RP-ALD) and direct plasma ALD (DP-ALD). The trenches, etched into silicon, featured a 7:1 aspect ratio, 76 nm pitch, and 38 nm critical dimension. We evaluated the electrical characteristics of HfO₂-based capacitors with TiN top and bottom electrodes, focusing on leakage current density and equivalent oxide thickness. Capacitance–voltage analysis and X-ray photoelectron spectroscopy (XPS) revealed that RP-ALD effectively suppressed plasma-induced damage, reducing defect density and leakage current. While DP-ALD offered excellent film properties, it suffered from degraded lateral uniformity due to direct plasma exposure. Given its superior lateral uniformity, lower leakage, and defect suppression, RP-ALD shows strong potential for improving DRAM capacitor performance and serves as a promising alternative to the currently adopted thermal ALD process. Full article

This paper presents an in situ time-based sensor designed to provide process authentication. The proposed sensor leverages the inherent metal routing within the chip to measure the RC time-constants of interconnects. However, since the routing metal is typically designed to minimize resistance and capacitance, the resulting small RC time-constants pose a challenge for direct measurement. To overcome this challenge, a “three-configuration” measurement approach is introduced, incorporating two auxiliary components—poly resistor and metal-insulator-metal (MIM) capacitor—to generate three amplified RC time-constants and, subsequently, deduce the routing time-constant. Compared to directly measuring the routing time-constants, this approach reduces measurement error by over 82% while incurring only a 25% area penalty. A straightforward analytical model is presented, taking into account the impact of parasitic capacitances within the discharge path. This analytical model exhibits an excellent concurrence with simulated results, with a maximum difference of only 2.6% observed across all three configurations and a 3.2% variation in the derived routing time-constant. A set of five variants of the time-based sensor are realized using a 130 nm CMOS process. Each variant consists of 44 samples distributed across 11 dies on two wafers. To verify the precision of the proposed sensor, identical resistors and capacitors are fabricated alongside them, forming a direct measurement array (DMA) that is measured using external equipment. After adjusting the routing resistance and capacitance values in the simulations to correspond to the mean values obtained from the DMA measurements, the proposed sensor’s measured results demonstrate a close alignment with simulations, exhibiting a maximum error of only 6.1%. Full article

This paper proposes a refractive index sensor with high sensitivity, which operates based on the Fano resonance phenomenon. The sensor is constructed using a metal–insulator–metal (MIM) waveguide integrated with a double square ring (DSR) configuration, enabling enhanced performance in refractive index detection. The propagation characteristics of the proposed structure are systematically investigated using the finite element method (FEM). Using a control variable method, this study systematically investigates the impact of refractive index changes and specific geometric parameters of the DSR structure on the sensor’s performance. Through the careful optimization of structural parameters, the sensor achieves a peak sensitivity (S) of 2700 nm/RIU along with a figure of merit (FOM) as high as 54. Owing to its simple configuration and high sensitivity, the proposed sensor holds significant potential for applications in temperature sensing and related fields. Full article

We designed and investigated a plasmonic nanosensor with ultra-high sensitivity and tunability, which is composed of a metal–insulator–metal (MIM) waveguide integrated with a side-coupled resonator (SR) and metal baffle. Its high performance is derived from Fano resonance, which is generated by the interaction between the modes of the SR and the baffle, and it can be precisely tuned by adjusting the parameters of the SR. Further investigation based on the incorporation of a side-coupled rectangular-ring resonator (SRR) generates three distinct Fano resonances, and the Fano resonance can be accurately tuned by manipulating the parameters of the resonators within the system. Our proposed plasmonic system can serve as a highly sensitive refractive index nanosensor, achieving a sensitivity up to 1150 nm/RIU. The plasmonic structures featuring independently tunable triple Fano resonances open new avenues for applications in nanosensing, bandstop filtering, and slow-light devices. Full article

In this work, a non-through metal–insulator–metal (MIM) waveguide capable of exciting three Fano resonances was designed and numerically studied using the finite element method. Fano resonances are achieved through the interaction between the modes of multiple circular split-ring resonator cavities and the waveguide. The effect of coupling between different resonators on the Fano resonance peaks is investigated. Independent tuning of the Fano resonance wavelength and transmission rate is accomplished by modifying the structural rotation angle and geometric parameters. After optimizing these parameters, the structure achieves an optimal refractive index sensitivity of 946.88 nm/RIU and a figure of merit of 99.17. The proposed structure holds potential for guiding the design of nanosensors. Full article

In this paper, a new sensor structure is designed, which consists of a metal–insulator–metal (MIM) waveguide and a circular protrusion and a rectangular triangular cavity (CPRTC). The characterization of nanoscale sensors is considered using an approximate numerical method (finite element method). The simulation results show that the sharp asymmetric resonance generated by the interaction between the discrete narrow-band mode and the continuous wideband mode is called Fano resonance. The performance of the sensor is considerably influenced by CPRTC. The sensor structure has attained a sensitivity of 3060 nm/RIU and a figure of merit (FOM) of 53.68. In addition, the application of this structure to temperature sensors is also investigated; its sensitivity is 1.493 nm/°C. The structure also has potential for other nanosensors. Full article

In this paper, a compact capacitive-loaded quarter-mode substrate integrated waveguide (CL-QMSIW) resonator is proposed and analyzed. This resonator is created by loading a metal–insulator–metal (MIM) capacitor inside the QMSIW resonator. A miniaturized hybrid bandpass filter with deep stopband suppression is designed based on the CL-QMSIW resonator and the stripline resonator. The filter generates a transmission zero (TZ) that can be adjusted flexibly through cross-coupling in its lower stopband, which significantly enhances the filter’s selectivity. To verify the correctness of the proposed filter, a third-order filter was created and produced, utilizing the low-temperature co-fired ceramics (LTCC) technique. The measurement outcomes align with the results from the electromagnetic simulations. The filter is characterized by a center frequency of 7 GHz, while the core size is only $0.33{\lambda }_g\times 0.17{\lambda }_g$, and the lowest insertion loss (IL) within the band is 1.4 dB, achieving a TZ at 5.1 GHz. The proposed filter features a compact dimension, excellent selectivity, and low insertion loss. Full article

Uncooled infrared (IR) sensors, including bolometers, thermopiles, and pyroelectrics, have traditionally dominated the market. Nevertheless, a new innovative technology, dubbed the TMOS sensor, has emerged. It is based on CMOS-SOI-MEMS (complementary-metal-oxide-semiconductor silicon-on-insulator micro-electromechanical systems) fabrication. This pioneering technology utilizes a suspended, micro-machined, thermally insulated transistor to directly convert absorbed infrared radiation into an electrical signal. The miniaturization of IR sensors, including the TMOS, is crucial for seamless integration into wearable and mobile technologies. However, this presents a significant challenge: balancing size reduction with sensor sensitivity. Smaller sensor footprints can often lead to decreased signal capture and, consequently, diminished performance. Metamaterial advancements offer a promising solution to this challenge. These engineered materials exhibit unique electromagnetic properties that can potentially boost sensor sensitivity while enabling miniaturization. The strategic integration of metamaterials into sensor design offers a pathway towards compact, high-sensitivity IR systems with diverse applications. This study explores the impact of electro-optical metal-insulator-metal (MIM) metamaterial absorbers on the thermal and electro-optical characteristics of CMOS-SOI-MEMS sensors in the mid-IR region. We target the key thermal properties critical to IR sensor performance: thermal conductance (Gth), thermal capacitance (Cth), and thermal time constant (τth). This study shows how material selection, layer thickness, and metamaterial geometry fill-factor affect the sensor’s thermal performance. An analytical thermal model is employed alongside 3D finite element software for precise numerical simulations. Full article

Metal–insulator–metal (MIM) waveguide-based plasmonic sensors are significantly important in the domain of advanced sensing technologies due to their exceptional ability to guide and confine light at subwavelength scales. These sensors exploit the unique properties of surface plasmon polaritons (SPPs) that propagate along the metal–insulator interface, facilitating strong field confinement and enhanced light–matter interactions. In this review, several critical aspects of MIM waveguide-based plasmonic sensors are thoroughly examined, including sensor designs, material choices, fabrication methods, and diverse applications. Notably, there exists a substantial gap between the numerical data and the experimental verification of these devices, largely due to the insufficient attention given to the hybrid integration of plasmonic components. This disconnect underscores the need for more focused research on seamless integration techniques. Additionally, innovative light-coupling mechanisms are suggested that could pave the way for the practical realization of these highly promising plasmonic sensors. Full article

Within this manuscript, we provide a novel Fano resonance-driven micro-nanosensor. Its primary structural components are a metal-insulator-metal (MIM) waveguide, a shield with three disks, and a T-shaped cavity (STDTC). The finite element approach was used to study the gadget in theory. It is found that the adjustment of the structure and the change of the dimensions are closely related to the sensitivity (S) and the quality factor (FOM). Different model structural parameters affect the Fano resonance, which in turn changes the transmission characteristics of the resonator. Through in-depth experimental analysis and selection of appropriate parameters, the sensor sensitivity finally reaches 3020 nm/RIU and the quality factor reaches 51.89. Furthermore, the installation of this microrefractive index sensor allows for the quick and sensitive measurement of glucose levels. It is a positive contribution to the field of optical devices and micro-nano sensors and meets the demand for efficient detection when applied in medical and environmental scenarios. Full article

In this study, we analyze metal–insulator–metal (MIM) capacitors with different thicknesses of SixNy film (650 Å, 500 Å, and 400 Å) and varying levels of film quality to improve their capacitance density. SixNy thicknesses of 650 Å, 500 Å, and 400 Å are used with four different conditions, designated as MIM (N content 1.49), NEWMIM (N content 28.1), DAMANIT (N content 1.43), and NIT (N content 0.30). We divide the C–V characteristics into two categories: voltage coefficient of capacitance (VCC) and temperature coefficient of capacitance (TCC). There was an overall increase in the VCC as the thickness of the SixNy film decreased, with some variation depending on the condition. However, the TCC did not vary significantly with thickness, only with condition. At the same thickness, the NIT condition yielded the highest capacitance density, while the MIM condition showed the lowest capacitance density. This difference was due to the actual thickness of the film and the variation in its k-value depending on the condition. The most influential factor for capacitance uniformity was the thickness uniformity of the SixNy film. Full article

The Casimir effect has been exploited in various MEMS (micro-electro-mechanical system) devices, especially to make sensitive force sensors and accelerometers. It has also been used to provide forces for a variety of purposes, for example, for the assembly of considerably small parts. Repulsive forces and torques have been produced using various configurations of media and materials. Just a few electronic devices have been explored that utilize the electrical properties of the Casimir effect. Recently, experimental results were presented that described the operation of an electronic device that employed a Casimir cavity attached to a standard MIM (metal–insulator–metal) structure. The DC (direct current) conductance of the novel MIM device was enhanced by the attached cavity and found to be directly proportional to the capacitance of the attached cavity. The phenomenological model proposed assumed that the cavity reduced the vacuum fluctuations, which resulted in a reduced injection of carriers. The analysis presented here indicates that the optical cavity actually enhances vacuum fluctuations, which would predict a current in the opposite direction from that observed. Further, the vacuum fluctuations near the electrode are shown to be approximately independent of the size of the optical cavity, in disagreement with the experimental data which show a dependence on the size. Thus, the proposed mechanism of operation does not appear correct. A more detailed theoretical analysis of these devices is needed, in particular, one that uses real material parameters and computes the vacuum fluctuations for the entire device. Such an analysis would reveal how these devices operate and might suggest design principles for a new genre of electronic devices that make use of vacuum fluctuations. Full article