Search Results (11)

The multilayers of Ta/Pd/[CoFeB (0.3 nm)/Pd]×5/Pd films were fabricated by ultra-high-vacuum (UHV) magnetron sputtering and subsequently annealed at temperatures (T_A) ranging from 100 °C to 400 °C. The magnetic measurements were performed with the applied field oriented parallel and perpendicular to the film plane to evaluate the out-of-plane magnetic anisotropy (PMA). A maximum effective PMA energy density (K_eff) of ≈7.82 × 10⁵ erg/cc and a small out-of-plane saturation magnetisation (M_s⊥) were achieved at the optimal T_A. The evolution of PMA is associated with interfacial atomic migration and oxidation processes, as confirmed by X-ray photoelectron spectroscopy (XPS). Annealing at 300 °C initiates the formation of TaB and TaOB interfacial phases, whereas annealing at 400 °C promotes the enhanced growth of Ta₂O₅ and TaB, along with additional TaOB formation owing to increased oxygen migration. These thermally stable Ta–boride phases lead to pronounced modifications in the magnetic properties. Consequently, oxygen migration and interfacial reactions at elevated temperatures primarily alter the chemical states of the B 1s, Pd 3d, and Ta 4f orbitals, thereby influencing the PMA. The field-dependent electrical resistance (MR) study demonstrates that annealing at 100–400 °C optimises the anisotropic effect in the [CoFeB/Pd]×5-based multilayers. However, higher temperatures can trigger atomic intermixing, which degrades PMA strength and the resistance response. Moreover, the samples were further characterised by their structural, anomalous Hall effect (AHE) and magnetoresonance (MRO) properties. Overall, controlled T_A-driven oxygen diffusion and interfacial oxidation enable effective tuning of the PMA, MR, and MRO properties of ultrathin [CoFeB/Pd]×5 multilayers, highlighting their strong potential for spin–orbit torque (SOT), Dzyaloshinskii–Moriya interaction (DMI), and magnetic skyrmion-based spintronic devices. Full article

The interfacial Dzyaloshinskii–Moriya interaction (DMI) plays a pivotal role in stabilising and controlling the motion of chiral spin textures, such as Néel-type bubble domains, in ultrathin magnetic films—an essential feature for next-generation spintronic devices. In this work, we investigate domain wall (DW) dynamics in magnetron-sputtered Ta(3 nm)/Pt(3 nm)/Co(1 nm)/RuO₂(1 nm) [Ru(1 nm)]/Pt(3 nm) multilayers, benchmarking their behaviour against control stacks. Vibrating sample magnetometry (VSM) was employed to determine saturation magnetisation and perpendicular magnetic anisotropy (PMA), while polar magneto-optical Kerr effect (P-MOKE) measurements provided coercivity data. Kerr microscopy visualised the expansion of bubble-shaped domains under combined perpendicular and in-plane magnetic fields, enabling the extraction of effective DMI fields. Brillouin light scattering (BLS) spectroscopy quantified the asymmetric propagation of spin waves, and micromagnetic simulations corroborated the experimental findings. The Pt/Co/RuO₂ system exhibits a Dzyaloshinskii–Moriya interaction (DMI) constant of ≈1.08 mJ/m², slightly higher than the Pt/Co/Ru system (≈1.03 mJ/m²) and much higher than the Pt/Co control (≈0.23 mJ/m²). Correspondingly, domain walls in the RuO₂-capped films show pronounced velocity asymmetry under in-plane fields, whereas the symmetric Pt/Co/Pt shows negligible asymmetry. Despite lower depinning fields in the Ru-capped sample, its domain walls move faster than those in the RuO₂-capped sample, indicating reduced pinning. Our results demonstrate that integrating RuO₂ significantly alters interfacial spin–orbit interactions. Full article

Thulium Iron Garnet (TIG), as an emerging hotspot in rare-earth iron garnet systems, possesses a large magnetostriction constant (λ₁₁₁) and a low damping coefficient. Therefore, it is possible to induce perpendicular magnetic anisotropy (PMA) through stress, which makes it more desirable for interfacial magnetic proximity or spin–orbit torque effects than Yttrium Iron Garnet (YIG). For achieving a high-quality TIG thin film and regulating its properties accordingly, understanding the effect of growth parameters on the film properties is essential. Using the Pulsed Laser Deposition (PLD) technique, we prepared TIG film on a Gadolinium Gallium Garnet (GGG) substrate. The correlations of its structural properties to the growth conditions are systematically studied, including the oxygen pressure and laser energy. With the annealing, a ferrimagnetic TIG thin film with PMA is successfully obtained. Our work provides a platform for achieving high-quality TIG thin films by experimentally regulating the growth factors. Full article

The interfacial perpendicular magnetic anisotropy (PMA) observed at ferromagnet/oxide interfaces presents great promise for energy-efficient spintronic technologies. The epitaxial strain induced by the lattice mismatch between films and substrates serves as an effective strategy for the tuning of the material properties. However, the current understanding of the strain effects on interfacial PMA remains insufficient. Here, we present an extensive study of the biaxial strain effects on the interfacial magnetism and interfacial magnetic anisotropy constant ($K_i$) in a slab-based Fe/MgO heterostructure using first-principles density functional theory calculations. Our results reveal a strong correlation between the spin moment of interfacial Fe atoms and the Fe-O bond length in both unstrained and strained systems. The overall $K_i$, which includes contributions from both the Fe/MgO interface and the Fe surface, increases as the compressive strain increases. This is consistent with recent experimental findings that show that the PMA energy increases when the in-plane lattice constant of Fe decreases. In contrast, the overall $K_i$ initially decreases with a small tensile strain of less than 0.4% and shows an increasing trend as the tensile strain increases from 0.4% to 2%. However, beyond 2%, the overall $K_i$ decreases again. These changes in $K_i$ can be explained by the strain-induced variations of Fe 3d orbitals near the Fermi energy. This study provides a comprehensive understanding of the strain effects on magnetic anisotropy in Fe-based heterostructures, offering insights for the further optimization of interfacial magnetic properties. Full article

Mn₄N thin film is one of the potential magnetic mediums for spintronic devices due to its ferrimagnetism with low magnetization, large perpendicular magnetic anisotropy (PMA), thermal stability, and large domain wall velocity. Recent experiments confirmed the existence of tunable magnetic skyrmions in MgO/Mn₄N/Cu_xPt_1−x(x = 0, 0.5, 0.9, 0.95), and density functional theory (DFT) calculation provided a large theoretical value of the interfacial Dzyaloshinskii–Moriya interaction (iDMI) of Mn₄N/Pt, which is consistent with the predicted chemical trend of the DMI in transition metal/Pt films. So far, the measured DMI has not been reported in Mn₄N, which is needed in order to support the predicted large DMI value. This paper reports the average DMI of MgO/Mn₄N(17 nm)/Cu_xPt_1−x(3 nm) extracted from the anomalous Hall effect with various tilted angles, which is based on magnetic droplet theory with DMI effects. The DMI decreases from 0.267 mJ/m² to 0.011 mJ/m² with non-linear tendencies as Cu concentration in the Cu_xPt_1−x capping layer increases from 0 to 1, demonstrating the control of the DMI through the Cu_xPt_1−x capping layer. Furthermore, a solid solution model is developed based on an X-ray photoelectron spectroscopy (XPS) compositional depth profile to analyze the possible effects on the DMI from the mixing layers at the surface of Mn₄N. After taking into account the mixing layers, the large DMI in Mn₄N film with Pt capping is consistent with the predicted DMI. Full article

Magnetic sensors are key elements in many industrial, security, military, and biomedical applications. Heusler alloys are promising materials for magnetic sensor applications due to their high spin polarization and tunable magnetic properties. The dynamic field range of magnetic sensors is strongly related to the perpendicular magnetic anisotropy (PMA). By tuning the PMA, it is possible to modify the sensing direction, sensitivity and even the accuracy of the magnetic sensors. Here, we report the tuning of PMA in a Co₂MnGa Heusler alloy film via argon (Ar) ion irradiation. MgO/Co₂MnGa/Pd films with an initial PMA were irradiated with 30 keV ⁴⁰Ar⁺ ions with fluences (ions·cm⁻²) between 1 × 10¹³ and 1 × 10¹⁵ Ar·cm⁻², which corresponds to displacement per atom values between 0.17 and 17, estimated from Monte-Carlo-based simulations. The magneto optical and magnetization results showed that the effective anisotropy energy (K_eff) decreased from ~153 kJ·m⁻³ for the un-irradiated film to ~14 kJ·m⁻³ for the 1 × 10¹⁴ Ar·cm⁻² irradiated film. The reduced K_eff and PMA are attributed to ion-irradiation-induced interface intermixing that decreased the interfacial anisotropy. These results demonstrate that ion irradiation is a promising technique for shaping the PMA of Co₂MnGa Heusler alloy for magnetic sensor applications. Full article

Spin-pumping-induced damping and interfacial Dzyaloshinskii–Moriya interaction (iDMI) have been studied in Pt/Co₂FeAl/MgO systems grown on Si or MgO substrates as a function of Pt and Co₂FeAl (CFA) thicknesses. For this, we combined vibrating sample magnetometry (VSM), microstrip ferromagnetic resonance (MS-FMR), and Brillouin light scattering (BLS). VSM measurements of the magnetic moment at saturation per unit area revealed the absence of a magnetic dead layer in both systems, with a higher magnetization at saturation obtained for CFA grown on MgO. The key parameters governing the spin-dependent transport through the Pt/CFA interface, including the spin mixing conductance and the spin diffusion length, have been determined from the CFA and the Pt thickness dependence of the damping. BLS has been used to measure the spin wave non-reciprocity via the frequency mismatch between the Stokes and anti-Stokes lines. iDMI has been separated from the contribution of the interface perpendicular anisotropy difference between Pt/CFA and CFA/MgO. Our investigation revealed that both iDMI strength and spin pumping efficiency are higher for CFA-based systems grown on MgO due to its epitaxial growth confirmed by MS-FMR measurements of the in-plane magnetic anisotropy. This suggests that CFA grown on MgO could be a promising material candidate as a spin injection source via spin pumping and for other spintronic applications. Full article

The ability to induce and control the perpendicular magnetic anisotropy (PMA) of ferromagnetic layers has been widely investigated, especially those that offer additional functionalities (e.g., skyrmion stabilization, voltage-based magnetization switching, rapid propagation of domain walls). Out-of-plane magnetized ferromagnetic layers in direct contact with an oxide belong to this class. Nowadays, investigation of this type of system includes antiferromagnetic oxides (AFOs) because of their potential for new approaches to applied spintronics that exploit the exchange bias (EB) coupling between the ferromagnetic and the AFO layer. Here, we investigate PMA and EB effect in NiO/Co/Au and NiO/Co/NiO layered systems. We show that the coercive and EB fields increase significantly when the Co layer is coupled with two NiO layers, instead of one. Surrounding the Co layer only with NiO layers induces a strong PMA resulting in an out-of-plane magnetized system can be obtained without a heavy metal/ferromagnetic interface. The PMA arises from a significant surface contribution (0.74 mJ/m²) that can be enhanced up to 0.99 mJ/m² by annealing at moderate temperatures (~450 K). Using field cooling processes for both systems, we demonstrate a wide-ranging control of the exchange bias field without perturbing other magnetic properties of importance. Full article

Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ) becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM) for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS) circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm) to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues. Full article

Synthetic perpendicular magnetic anisotropy (PMA) ferrimagnets consisting of 30-nm-thick D0₂₂-MnGa and Co₂MnSi (CMS) cubic Heusler alloys with different thicknesses of 1, 3, 5, 10 and 20 nm, buffered and capped with a Cr film, are successfully grown epitaxially on MgO substrate. Two series samples with and without post annealing at 400 °C are fabricated. The (002) peak of the cubic L2₁ structure of CMS films on the MnGa layer is observed, even for the 3-nm-thick CMS film for both un-annealed and annealed samples. The smaller remnant magnetization and larger switching field values of CMS (1–20 nm)/MnGa (30 nm) bilayers compared with 30-nm-thick MnGa indicates antiferromagnetic (AFM) interfacial exchange coupling (J_ex) between MnGa and CMS films for both un-annealed and annealed samples. The critical thickness of the CMS film for observing PMA with AFM coupling in the CMS/MnGa bilayer is less than 10 nm, which is relatively large compared to previous studies. Full article

Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM) has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA) based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA. Full article