Search Results (10)

This paper describes the high-rate (~1.5 μm/min) growth of Si films on Si supporting substrates with (100) crystallographic orientation at 600 °C, 800 °C, and 1000 °C in a vacuum environment of ~1 × 10⁻⁵ mbar using electron beam (e-beam) evaporation. The microstructure, crystallinity, and conductivity of such films were investigated. It was established that fully crystalline (Raman spectroscopy, EBSD) and stress-free epi-Si layers with a thickness of approximately 50 µm can be fabricated at 1000 °C, while at 600 °C and 800 °C, some poly-Si inclusions were observed using Raman spectroscopy. Hall effect measurements showed that epi-Si layers deposited at 1000 °C had resistivity, carrier concentration, and mobility comparable to those obtained for c-Si wafers fabricated through ingot growth and wafering using the same solar grade Si feedstock used for the e-beam depositions. The dislocation densities were determined to be ∼2 × 10⁷ cm⁻² and ∼5 × 10⁶ cm⁻² at 800 and 1000 °C, respectively, using Secco etch. The results highlight the potential of e-beam evaporation as a promising and cost-effective alternative to conventional CVD for the growth of epi-Si layers and, potentially, epi-Si wafers. Some of the remaining technical challenges of this deposition technology are briefly indicated and discussed. Full article

In this study, we present the fabrication and characterization of vertically oriented NiO/β polymorph n-Ga₂O₃/n+ Ga₂O₃ heterojunction rectifiers featuring a substantial area of 1 mm². A dual-layer SiN_X/SiO₂ dielectric field plate edge termination was employed to increase the breakdown voltage (V_B). These heterojunction rectifiers exhibit remarkable simultaneous achievement of high breakdown voltage and substantial conducting currents. In particular, the devices manifest V_B of 7 kV when employing a 15 µm thick drift layer doping concentration of 8.8 × 10¹⁵ cm⁻³, concurrently demonstrating a forward current of 5.5 A. The thick drift layer is crucial in obtaining high V_B since similar devices fabricated on 10 µm thick epilayers had breakdown voltages in the range of 3.6–4.0 kV. Reference devices fabricated on the 15 µm drift layers had V_B of 5 kV. The breakdown is still due to leakage current from tunneling and thermionic emission and not from avalanche breakdown. An evaluation of the power figure-of-merit, represented by V_B²/R_ON, reveals a value of 9.2 GW·cm⁻², where R_ON denotes the on-state resistance, measuring 5.4 mΩ·cm². The Coff was 4 nF/cm², leading to an R_ON × C_off of 34 ps and F_CO of 29 GHz. The turn-on voltage for these rectifiers was ~2 V. This exceptional performance surpasses the theoretical unipolar one-dimensional (1D) limit of both SiC and GaN, underscoring the potential of β-Ga₂O₃ for forthcoming generations of high-power rectification devices. Full article

A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation layer, without the conventional doped thick buffer layer. Compared to the conventional epi-structures on the SiC and Si substrates, the non-buffer epi-AlGaN/GaN structure had a better crystalline quality and surface morphology, with reliable control of growth stress. Hall measurements showed that the novel structure exhibited comparable transport properties to the conventional epi-structure on the SiC substrate, regardless of the buffer layer. Furthermore, almost unchanged carrier distribution from room temperature to 150 °C indicated excellent two-dimensional electron gas (2DEG) confinement due to the pulling effect of the conduction band from the nucleation layer as a back-barrier. High-performance depletion-mode MIS-HEMTs were demonstrated with on-resistance of 5.84 Ω·mm and an output current of 1002 mA/mm. The dynamic characteristics showed a much smaller decrease in the saturation current (only ~7%), with a quiescent drain bias of 40 V, which was strong evidence of less electron trapping owing to the high-quality non-buffer AlGaN/GaN epitaxial growth. Full article

Magnetic perovskite films have promising properties for use in energy-efficient spintronic devices and magnetic refrigeration. Here, an epitaxial ferromagnetic La_0.67Ba_0.33Mn_0.95Ti_0.05O₃ (LBMTO-5) thin film was grown on SrTiO₃(001) single crystal substrate by pulsed laser deposition. High-resolution X-ray diffraction proved the high crystallinity of the film with tetragonal symmetry. The magnetic, magnetocaloric and magnetoresistance properties at different directions of the applied magnetic field with respect to the ab plane of the film were investigated. An in-plane uni-axial magnetic anisotropy was evidenced. The LBMTO-5 epilayer exhibits a second-order ferromagnetic-paramagnetic phase transition around 234 K together with a metal–semiconductor transition close to this Curie temperature (T_C). The magnetic entropy variation under 5 T induction of a magnetic field applied parallel to the film surface reaches a maximum of 17.27 mJ/cm³ K. The relative cooling power is 1400 mJ/cm³ K (53% of the reference value reported for bulk Gd) for the same applied magnetic field. Giant magnetoresistance of about 82% under 5 T is obtained at a temperature close to T_C. Defined as the difference between specific resistivity obtained under 5 T with the current flowing along the magnetic easy axis and the magnetic field oriented transversally to the current, parallel and perpendicular to the sample plane, respectively, the in-plane magneto-resistance anisotropy in 5 T is about 9% near the T_C. Full article

This paper studied an atomic layer etching (ALE) technique with a surface treatment function for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted, and 30 s O₂ + 15 W BCl₃ was chosen as the optimal recipe. The optimal ALE approach exhibited satisfactory etching results, with regard to the etch-stop effect, compared with other techniques. The atomic force microscopy (AFM) results showed an etching per cycle (EPC) value of 0.15 nm/cycle, with a 0.996 fit coefficient and root mean square (RMS) surface roughness of around 0.61 nm (0.71 nm for as-grown sample), which was the lowest in comparison with digital etching (0.69 nm), Cl₂/BCl₃ continuous etching (0.91 nm) and BCl₃ continuous etching (0.89 nm). X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy with energy dispersive X-ray spectroscopy measurements (STEM/EDS) verified the indium clustered phenomena at the bottom apex of V-pit defects in the epi structure of InAlN/GaN high electron mobility transistors (HEMTs) for the first time, in addition to the surface morphology optimization for the ALE under-etching technique used in this work. The resistor hall effect (Hall) and AFM measurements demonstrated that after 4 or 5 ALE cycles, the two-dimensional electron gas (2-DEG) density and RMS roughness were improved by 15% and 11.4%, respectively, while the sheet resistance (R_sh) was reduced by 6.7%, suggesting a good surface treatment function. These findings were important for realizing high-performance InAlN/GaN HEMTs. Full article

In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained. The vertical GaN p-i-n diode showed a low specific on-resistance of 0.85 mΩ-cm² and high breakdown voltage (BV) of 2.98 kV. The high breakdown voltage can be attributed to the thick GaN epi-layer and corresponds to the mesa structure. Improvement of the device characteristics by the mesa structure was investigated using device simulations. We proved that a deeper mesa depth is able to decrease the electric field at the bottom of the mesa structure. Furthermore, a smaller mesa bevel angle will assist the BV up to 2.98 kV at a 60° bevel angle. Our approach demonstrates structural optimization of GaN vertical p-i-n diodes is useful to improve the device performance. Full article

In this work, we grew transfer-free graphene-like thin films (GLTFs) directly on gallium nitride (GaN)/sapphire light-emitting diode (LED) substrates. Their electrical, optical and thermal properties were studied for transparent electrode applications. Ultrathin platinum (2 nm) was used as the catalyst in the plasma-enhanced chemical vapor deposition (PECVD). The growth parameters were adjusted such that the high temperature exposure of GaN wafers was reduced to its minimum (deposition temperature as low as 600 °C) to ensure the intactness of GaN epilayers. In a comparison study of the Pt-GLTF GaN LED devices and Pt-only LED devices, the former was found to be superior in most aspects, including surface sheet resistance, power consumption, and temperature distribution, but not in optical transmission. This confirmed that the as-developed GLTF-based transparent electrodes had good current spreading, current injection and thermal spreading functionalities. Most importantly, the technique presented herein does not involve any material transfer, rendering a scalable, controllable, reproducible and semiconductor industry-compatible solution for transparent electrodes in GaN-based optoelectronic devices. Full article

Drug substance degradation kinetics in solid dosage forms is rarely mechanistically modeled due to several potential micro-environmental and manufacturing related effects that need to be integrated into rate laws. The aim of our work was to construct a model capable of predicting individual degradation product concentrations, taking into account also formulation composition parameters. A comprehensive study was done on active film-coated tablets, manufactured by layering of the drug substance, a primary amine compound saxagliptin, onto inert tablet cores. Formulation variables like polyethylene glycol (PEG) 6000 amount and film-coat polymer composition are incorporated into the model, and are connected to saxagliptin degradation, via formation of reactive impurities. Derived reaction equations are based on mechanisms supported by ab initio calculations of individual reaction activation energies. Alongside temperature, relative humidity, and reactant concentration, the drug substance impurity profile is dependent on micro-environmental pH, altered by formation of acidic PEG degradation products. A consequence of pH lowering, due to formation of formic acid, is lower formation of main saxagliptin degradation product epi-cyclic amidine, a better resistance of formulation to high relative humidity conditions, and satisfactory tablet appearance. Discovered insights enhance the understanding of degradational behavior of similarly composed solid dosage forms on overall drug product quality and may be adopted by pharmaceutical scientists for the design of a stable formulation. Full article

Knowledge of the mechanical behaviors of polymer film in humid environments is of great significance for predicting the long-term performance of emulsion polymer isocyanate (EPI) as a high-performance wood adhesive. A tri-copolymer latex was cross-linked by the general polymeric methylene diisocyanate (p-MDI) and aqueous emulsified isocyanate (EMDI) at different loadings for preparing EPI. Furthermore, a series of uniaxial tension tests under different relative humidity (RH) were carried out on cured EPI samples before and after post-curing treatment, and the corresponding chemical structure, as well as the microstructure of polymers, was investigated in detail. In addition, a constitutive equation was formulated to calculate the viscoelastic characteristics of the adhesive layer. The results indicate that the EPI films reveal various kinds of intrinsic deformation as RH increases, and the tensile rupture stress and stiffness would obviously decrease, even at cross-linker weight ratios of up to 20%. Furthermore, the moisture resistance could be markedly improved by increasing the isocyanate content and post-cure. Importantly, EMDI-cross-linked film not only exhibits much better mechanical properties than that containing p-MDI at 0–80% RH, but is also more sensitive to post-cure. Finally, the derived viscoelastic model could efficiently track moisture-dependent stress-strain curves of EPI films, and the obtained relaxation time further reveals the influence mechanism of isocyanate and post-cure on the mechanical response of the cured polymer under moist conditions. Full article

An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 10¹¹ cm⁻³, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 10¹⁶ to 10¹⁷ cm⁻³, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90 Ω series resistance for a 7.6 mm² anode area. Full article