Search Results (1,998)

We have tested the performance of spectroscopic single-crystal Chemical Vapor-Deposited (sCVD) diamond detectors with radioactive sources and with a pulsed deuterium-tritium neutron generator. The tests demonstrate that the detectors could provide good timing and spectroscopic information at high neutron fluxes. The spectroscopic information can be obtained at a 14 MeV neutron rate as high as 10¹⁰ n/cm²/s, despite some limitations associated with pulse character of the used neutron generator. Monte-Carlo simulations were performed in order to achieve better understanding of neutron interaction with the detector material. Possible applications for the use of the detectors at Soreq Applied Research Accelerator Facility (SARAF) are considered. The detectors could be used as reliable neutron rate monitors in the vicinity of a strong accelerator-based source of energetic neutrons. The detectors could also be utilized as time-of-flight tagging counters in nuclear physics experiments under condition of high neutron fluxes during short beam pulses. In particular, measurement of the ¹²C(n,n′)3α cross-section is discussed. Full article

Highly integrable silicon carbide (SiC) has emerged as a promising platform for photonic integrated circuits (PICs), offering a comprehensive set of material and optical properties that are ideal for the integration of nonlinear devices and solid-state quantum defects. However, despite significant progress in nanofabrication technology, the development of SiC on an insulator (SiCOI)-based photonics faces challenges due to fabrication-induced material optical losses and complex processing steps. An alternative approach to mitigate these fabrication challenges is the direct deposition of amorphous SiC on an insulator (a-SiCOI). However, there is a lack of systematic studies aimed at producing high optical quality a-SiC thin films, and correspondingly, on evaluating and determining their optical properties in the telecom range. To this end, we have studied a single-source precursor, 1,3,5-trisilacyclohexane (TSCH, C₃H₁₂Si₃), and chemical vapor deposition (CVD) processes for the deposition of SiC thin films in a low-temperature range (650–800 °C) on a multitude of different substrates. We have successfully demonstrated the fabrication of smooth, uniform, and stoichiometric a-SiCOI thin films of 20 nm to 600 nm with a highly controlled growth rate of ~0.5 Å/s and minimal surface roughness of ~5 Å. Spectroscopic ellipsometry and resonant micro-photoluminescence excitation spectroscopy and mapping reveal a high index of refraction (~2.7) and a minimal absorption coefficient (<200 cm⁻¹) in the telecom C-band, demonstrating the high optical quality of the films. These findings establish a strong foundation for scalable production of high-quality a-SiCOI thin films, enabling their application in advanced chip-scale telecom PIC technologies. Full article

AlGaN-based high-electron-mobility transistors are critical for next-generation power electronics and radio-frequency applications, yet achieving stable enhancement-mode operation with a high threshold voltage remains a key challenge. In this work, we designed p-AlGaN superlattices with different structures and performed energy band structure simulations using the device simulation software Silvaco. The results demonstrate that thin barrier structures lead to reduced acceptor incorporation, thereby decreasing the number of ionized acceptors, while facilitating vertical hole transport. Superlattice samples with varying periodic thicknesses were grown via metal-organic chemical vapor deposition, and their crystalline quality and electrical properties were characterized. The findings reveal that although gradient-thickness barriers contribute to enhancing hole concentration, the presence of thick barrier layers restricts hole tunneling and induces stronger scattering, ultimately increasing resistivity. In addition, we simulated the structure of the enhancement-mode HEMT with p-AlGaN as the under-gate material. Analysis of its energy band structure and channel carrier concentration indicates that adopting p-AlGaN superlattices as the under-gate material facilitates achieving a higher threshold voltage in enhancement-mode HEMT devices, which is crucial for improving device reliability and reducing power loss in practical applications such as electric vehicles. Full article

Tribological processes in extreme environments pose serious material challenges, requiring coatings that resist both wear and corrosion. This review summarizes recent advances in protective coatings engineered for extreme environments such as high temperatures, chemically aggressive media, and high-pressure and abrasive domains, as well as cryogenic and space applications. A comprehensive overview of promising coating materials is provided, including ceramic-based coatings, metallic and alloy coatings, and polymer and composite systems, as well as nanostructured and multilayered architectures. These materials are deployed using advanced coating technologies such as thermal spraying (plasma spray, high-velocity oxygen fuel (HVOF), and cold spray), chemical and physical vapor deposition (CVD and PVD), electrochemical methods (electrodeposition), additive manufacturing, and in situ coating approaches. Key degradation mechanisms such as adhesive and abrasive wear, oxidation, hot corrosion, stress corrosion cracking, and tribocorrosion are examined with coating performance. The review also explores application-specific needs in aerospace, marine, energy, biomedical, and mining sectors operating in aggressive physiological environments. Emerging trends in the field are highlighted, including self-healing and smart coatings, environmentally friendly coating technologies, functionally graded and nanostructured coatings, and the integration of machine learning in coating design and optimization. Finally, the review addresses broader considerations such as scalability, cost-effectiveness, long-term durability, maintenance requirements, and environmental regulations. This comprehensive analysis aims to synthesize current knowledge while identifying future directions for innovation in protective coatings for extreme environments. Full article

Ultra-fine-grained bainitic (UFGB) steels offer excellent mechanical properties, which can be further improved by applying diamond-like carbon (DLC) coatings. However, poor adhesion between the coating and substrate remains a key limitation. Since the steel’s microstructure degrades at high temperatures, enhancing adhesion without heating the substrate is essential. This study investigates surface hardening combined with simultaneous nitrogen and hydrogen doping during the Radio Frequency Chemical Vapor Deposition (RFCVD) process to improve coating performance. Varying gas compositions were tested to assess their effects on coating properties. Nitrogen incorporation decreased hardness from 12 GPa to 9 GPa but improved adhesion, while hydrogen limited damage after coating failure. Optimizing the gas mixture led to enhanced adhesion and wear resistance. Raman and X-ray photoelectron spectroscopy (XPS) analyses confirmed that the optimized coatings had the highest sp³ bond content and elevated nitrogen levels. While both hardness and adhesion contributed to wear resistance, no direct link to coating thickness was found. Overall, co-doping with nitrogen and hydrogen is an effective approach to improve adhesion and wear resistance without requiring high processing temperatures or complex equipment. Full article

Polyimide, a class of high-performance polymers, is renowned for its exceptional thermal stability, mechanical strength, and chemical resistance. However, in the context of high-integration and high-frequency electronic packaging, polyimides face critical challenges including relatively high dielectric constants, inadequate thermal conductivity, and mechanical brittleness. Recent advances have focused on molecular design and composite engineering strategies to address these limitations. This review first summarizes the intrinsic properties of polyimides, followed by a systematic discussion of chemical synthesis, surface modification approaches, molecular design principles, and composite fabrication methods. We comprehensively examine both conventional polymerization synthetic routes and emerging techniques such as microwave-assisted thermal imidization and chemical vapor deposition. Special emphasis is placed on porous structure engineering via solid-template and liquid-template methods. Three key modification strategies are highlighted: (1) surface modifications for enhanced hydrophobicity, chemical stability, and tribological properties; (2) molecular design for optimized dielectric performance and thermal stability; and (3) composite engineering for developing high-thermal-conductivity materials with improved mechanical strength and electromagnetic interference (EMI) shielding capabilities. The dielectric constant of polyimide is reduced while chemical stability and wear resistance can be enhanced through the introduction of fluorine groups. Ultra-low dielectric constant and high-temperature resistance can be achieved by employing rigid monomers and porous structures. Furthermore, the incorporation of fillers such as graphene and boron nitride can endow the composite materials with high thermal conductivity, excellent EMI shielding efficiency, and improved mechanical properties. Finally, we discuss representative applications of polyimide and composites in electronic device packaging, EMI shielding, and thermal management systems, providing insights into future development directions. Full article

During the last few years, the requirements for highly efficient, sustainable, and versatile materials in modern biomedicine, aircraft and aerospace industries, automotive production, and electronic and electrical engineering applications have increased. This has led to the development of new and innovative methods for material modification and optimization. This can be achieved in many different ways, but one such approach is the application of surface thin films. They can be conductive (metallic), semi-conductive (metal-ceramic), or isolating (polymeric). Special emphasis is placed on applying semi-conductive thin films due to their unique properties, be it electrical, chemical, mechanical, or other. The particular thin films of interest are composite ones of the type of transition metal oxide (TMO) and transition metal nitride (TMN), due to their widespread configurations and applications. Regardless of the countless number of studies regarding the application of such films in the aforementioned industrial fields, some further possible investigations are necessary to find optimal solutions for modern problems in this topic. One such problem is the possibility of characterization of the applied thin films, not via textbook approaches, but through a simple, modern solution using their electrical properties. This can be achieved on the basis of measuring the films’ electrical impedance, since all different semi-conductive materials have different impedance values. However, this is a huge practical work that necessitates the collection of a large pool of data and needs to be based on well-established methods for both characterization and formation of the films. A thorough review on the topic of applying thin films using physical vapor deposition techniques (PVD) in the field of different modern applications, and the current results of such investigations are presented. Furthermore, current research regarding the possible methods for applying such films, and the specifics behind them, need to be summarized. Due to this, in the present work, the specifics of applying thin films using PVD methods and their expected structure and properties were evaluated. Special emphasis was paid to the electrical impedance spectroscopy (EIS) method, which is typically used for the investigation and characterization of electrical systems. This method has increased in popularity over the last few years, and its applicability in the characterization of electrical systems that include thin films formed using PVD methods was proven many times over. However, a still lingering question is the applicability of this method for backwards engineering of thin films. Currently, the EIS method is used in combination with traditional techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and others. There is, however, a potential to predict the structure and properties of thin films using purely a combination of EIS measurements and complex theoretical models. The current progress in the development of the EIS measurement method was described in the present work, and the trend is such that new theoretical models and new practical testing knowledge was obtained that help implement the method in the field of thin films characterization. Regardless of this progress, much more future work was found to be necessary, in particular, practical measurements (real data) of a large variety of films, in order to build the composition–structure–properties relationship. Full article

Epitaxial growth of β-Ga₂O₃ nanowires on silicon substrates was realized by the low-pressure chemical vapor deposition (LPCVD) method. The as-grown Si/Ga₂O₃ heterojunctions were employed in the Underwater DUV detection. It is found that the carrier type as well as the carrier concentration of the silicon substrate significantly affect the performance of the Si/Ga₂O₃ heterojunction. The p-Si/β-Ga₂O₃ (2.68 × 10¹⁵ cm⁻³) devices exhibit a responsivity of up to 205.1 mA/W, which is twice the performance of the devices on the n-type substrate (responsivity of 93.69 mA/W). Moreover, the devices’ performance is enhanced with the increase in the carrier concentration of the p-type silicon substrates; the corresponding device on the high carrier concentration substrate (6.48 × 10¹⁷ cm⁻³) achieves a superior responsivity of 845.3 mA/W. The performance enhancement is mainly attributed to the built-in electric field at the p-Si/n-Ga₂O₃ heterojunction and the reduction in the Schottky barrier under high carrier concentration. These findings would provide a strategy for optimizing carrier transport and interface engineering in solar-blind UV photodetectors, advancing the practical use of high-performance solar-blind photodetectors for underwater application. Full article

Two-dimensional (2D) materials have been proposed for use in a multitude of applications, with graphene being one of the most well-known 2D materials. Despite their potential to contribute to innovative solutions, the fabrication of such devices still faces significant challenges. One of the key challenges is the fabrication at a wafer-level scale, a fundamental step for allowing reliable and reproducible fabrication of a large volume of devices with predictable properties. Overcoming this barrier will allow further integration with sensors and actuators, as well as enabling the fabrication of complex circuits based on 2D materials. This work presents the fabrication steps for a process that allows the on-wafer fabrication of active and passive radiofrequency (RF) devices enabled by graphene. Two fabrication processes are presented. In the first one, graphene is transferred to a back gate surface using critical point drying to prevent cracks in the graphene. In the second process, graphene is transferred to a flat surface planarized by ion milling, with the gate being buried beneath the graphene. The fabrication employs a damascene-like process, ensuring a flat surface that preserves the graphene lattice. RF transistors, passive RF components, and antennas designed for backscatter applications are fabricated and measured, illustrating the versatility and potential of the proposed method for 2D material-based RF devices. The integration of graphene on devices is also demonstrated in an antenna. This aimed to demonstrate that graphene can also be used as a passive device. Through this device, it is possible to measure different backscatter responses according to the applied graphene gating voltage, demonstrating the possibility of wireless sensor development. With the proposed fabrication processes, a flat graphene with good quality is achieved, leading to the fabrication of RF active devices (graphene transistors) with intrinsic f_T and f_max of 14 GHz and 80 GHz, respectively. Excellent yield and reproducibility are achieved through these methods. Furthermore, since the graphene membranes are grown by Chemical Vapor Deposition (CVD), it is expected that this process can also be applied to other 2D materials. Full article

The development of effective oil adsorbents has attracted a great deal of attention due to the increasingly serious problem of oil pollution. A light and porous collagen (COL)/polyvinyl alcohol (PVA)/vanadium carbide (V₂CT_x) composite aerogel was synthesized using a simple method of blending, directional freezing, and drying. After modification with methyltriethoxysilane (MTMS) via chemical vapor deposition, the aerogel possessed an excellent hydrophobicity and its water contact angle reached 135°. The hydrophobic COL/PVA/V₂CT_x composite aerogel exhibits a porous structure with a specific surface area of 49 m²/g. It also possesses prominent mechanical properties with an 80.5 kPa compressive stress at 70% strain, a low density (about 28 mg/cm³), and outstanding thermal stability, demonstrating a 61.02% weight loss from 208 °C to 550 °C. Importantly, the hydrophobic COL/PVA/V₂CT_x aerogel exhibits a higher oil absorption capacity and stability, as well as a faster absorption rate, than the COL/PVA aerogel when tested with various oils. The hydrophobic COL/PVA/V₂CT_x aerogel has the capacity to adsorb 80 times its own weight of methylene chloride, with help from hydrophobic interactions, Van der Waals forces, intermolecular interactions, and capillary action. Compared with the pseudo first-order model, the pseudo second-order model is more suitable for oil adsorption kinetics. Therefore, the hydrophobic COL/PVA/V₂CT_x aerogel can be used as an environmentally friendly and efficient oil adsorbent. Full article

The slurry aluminizing process is widely employed to enhance the oxidation and corrosion resistance of nickel-based superalloys used in high-temperature environments such as gas turbines and aerospace engines. This study investigates the effects of the concentration of Al vapors in the reactor chamber and the initial slurry layer thickness on the microstructure, chemical composition, and phase composition of aluminide coatings. Coatings were manufactured on Ni-based superalloy substrates using CrAl powders as an aluminum source and chloride- and fluoride-based activator salts. The effect of the initial thickness of the slurry layer was studied by varying the amount of deposited slurry in terms of mg_slurry/cm²_sample (with constant mg_slurry/cm³_chamber). The microstructure and phase composition of the produced aluminide coatings were evaluated by SEM, EDS, and XRD analysis. Slurry thickness can affect concentration gradients during diffusion, and the best results were obtained with an initial slurry amount of 100 mg_slurry/cm²_sample. The effect of the Al vapor phase in the reaction chamber was then investigated by varying the mg_slurry/cm³_chamber ratio while keeping the slurry layer thickness constant at 100 mg_slurry/cm²_sample. This parameter influences the amount of Al at the substrate surface before the onset of solid-state diffusion, and the best results were obtained for a 6.50 mg_slurry/cm³_chamber ratio with the formation of 80 µm coatings (excluding the interdiffusion zone) with a β-NiAl phase throughout the thickness. To validate process flexibility, the same parameters were successfully applied to produce platinum-modified aluminides with a bi-phasic ζ-PtAl2 and β-(Ni,Pt)Al microstructure. Full article

This work presents a comparative analysis of the results of silicon carbide synthesis through the carbonization of Si (001) and Si (111) substrates in the temperature range 1130–1140 °C. The synthesis involved chemical vapor deposition utilizing thermally stimulated methane reduction in a hydrogen gas stream. The experiments employed an Oxford Nanofab Plasmalab System 100 apparatus on substrates from which the native oxide was removed according to established protocols. To minimize random experimental variations (e.g., deviations from set parameters), short synthesis durations of 3 and 5 min were analyzed. The resultant thin films underwent evaluations through several techniques, including X-ray photoelectron spectroscopy, X-ray diffractometry, optical emission spectroscopy with glow discharge, and transmission electron microscopy. A comparison and analysis were conducted between the results from both substrate orientations. Full article

Direct chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evaluates recent advances in CVD techniques for h-BN synthesis on insulating substrates, including metal–organic CVD (MOCVD), low-pressure CVD (LPCVD), atmospheric-pressure CVD (APCVD), and plasma-enhanced CVD (PECVD). Key challenges, including precursor selection, high-temperature processing, achieving single-crystalline films, and maintaining phase purity, are critically analyzed. Special emphasis is placed on comparative performance metrics across different growth methodologies. Furthermore, crucial research directions for future development in this field are outlined. This review aims to serve as a reference for advancing h-BN synthesis toward practical applications in next-generation electronic and optoelectronic devices. Full article

The paper shows the effect of using a lubricant in the form of an ionic liquid, 1-butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF₆), on the tribological properties of a hydrogenated diamond-like coating (DLC) doped with tungsten a-C:H:W. The coatings were deposited on 100Cr6 steel by plasma-enhanced chemical vapor deposition PECVD. Tribological tests were carried out on a TRB³ tribometer in a rotary motion in a ball–disc combination. 100Cr6 steel balls were used as a counter-sample. Friction and wear tests were carried out for discs made of 100Cr6 steel and 100Cr6 steel discs with a DLC coating. They were performed under friction conditions with and without lubrication under 10 N and 15 N loads. The ionic liquid BMIM-PF₆ was used as a lubricant. Coating thickness was observed on a scanning microscope, and the linear analysis of chemical composition on the cross-section was analyzed using the EDS analyzer. The confocal microscope with an interferometric mode was used for analysis of the geometric structure of the surface before and after the tribological tests. The contact angle of the samples for distilled water, diiodomethane and ionic liquid was tested on an optical tensiometer. The test results showed good cooperation of the DLC coating with the lubricant. It lowered the coefficient of friction in comparison to steel about 20%. This indicates the synergistic nature of the interaction: DLC coating–BMIM-PF₆ lubricant–100Cr6 steel. Full article

Mesoporous silicon dioxide films have been shown to be well suited as adhesion-promoting interlayers for generating high-strength polymer–metal interfaces. These films can be fabricated via microwave plasma-enhanced chemical vapor deposition using the precursor hexamethyldisiloxane and oxygen as working gas. The resulting mesoporous structures enable polymer infiltration during overmolding, which leads to a nanoscale form-locking mechanism after solidification. This mechanism allows for efficient stress transfer across the interface and makes the resulting adhesion highly dependent on the morphology of the deposited film. To gain a deeper understanding of the underlying deposition mechanisms and improve process stability, this work investigates the growth behavior of mesoporous silica films using a multiple regression analysis approach. The seven process parameters coating time, distance, chamber pressure, substrate temperature, flow rate, plasma pulse duration, and pause-to-pulse ratio were systematically varied within a Design of Experiments framework. The resulting films were characterized by their free surface area, mean agglomerate diameter, and film thickness using digital image analysis, white light interferometry, and atomic force microscopy. The deposited films exhibit a wide range of morphological appearances, ranging from quasi-dense to dust-like structures. As part of this research, the free surface area varied from 15 to 55 percent, the mean agglomerate diameter from 17 to 126 nm, and the film thickness from 35 to 1600 nm. The derived growth model describes the deposition process with high statistical accuracy. Furthermore, all coatings were overmolded via injection molding and subjected to mechanical testing, allowing a direct correlation between film morphology and their performance as adhesion-promoting interlayers. Full article