Search Results (6)

Detection of nanoplastics in drinking-water systems is only the first analytical step toward exposure interpretation; the next challenge is source attribution. This review examines molecular fingerprinting and transformation pathways that can link nanoscale polymer signals to source waters, drinking-water treatment, distribution infrastructure, packaging materials, laboratory background, or aging processes across the potable-water chain. Nanoplastics are treated here as operationally defined particles below 1 µm, including intentionally manufactured primary nanoplastics and secondary nanoplastics generated by fragmentation, abrasion, weathering, treatment, storage, or packaging stress. The synthesis evaluates how polymer identity, particle morphology, surface oxidation, additive and oligomer profiles, thermal degradation markers, matrix context, and quality assurance/quality control (QA/QC) can be combined into defensible source assignments. Analytical platforms considered include surface-enhanced Raman spectroscopy (SERS), atomic force microscopy–infrared spectroscopy (AFM-IR), optical photothermal infrared spectroscopy (O-PTIR), stimulated Raman scattering microscopy (SRS), pyrolysis–gas chromatography–mass spectrometry (Py-GC/MS), asymmetric flow field-flow fractionation coupled to Py-GC/MS (AF4-Py-GC/MS), matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF-MS), and chemometric workflows. The central conclusion is that source attribution cannot be inferred from polymer identity alone; robust interpretation requires convergent evidence from particle-level chemistry, polymer-specific mass, additive or marker-ion signatures, aging state, blanks, recovery, and contextual sampling design. Full article

The parameter degradation and failure mechanisms of 1200 V asymmetric trench-type (AT) silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) under various single and repetitive surge currents, with various gate bias voltages (V_GS) of 0 V, −5 V, and −10 V, are systematically investigated in this work. It is indicated that V_GS has no impact on the single surge reliability, with the same maximum single surge current (SSC_max) under different V_GS. However, during repetitive surge stress (90% and 60% SSC_max), the maximum surge cycles have increased as V_GS increases from −10 V to 0 V. It may be caused by the enhancement of channel-assisted leakage conduction, allowing more surge current to flow through the channel. It is concluded from gate capacitance (Cg-Vg) and low-frequency noise (LFN) characterizations that lower V_GS increases SiC/SiO₂ interface defect density, accelerating parameter degradation during single and repetitive surge stress. Both chip and package failures are observed for single and repetitive surge stress. For single surge stress, the device failure has resulted from the melted source Al as the metal erodes and penetrates through the interlayer dielectric and the ohmic contact layer between the source metal and the SiC-doped region, respectively, leading to a three-terminal short circuit. For repetitive surge stress, the device failure has been caused by the penetration of Al metal into the interlayer dielectric, leading to a gate-source short circuit. This comprehensive research provides valuable guidance for enhancing the surge reliability of SiC MOSFETs. Full article

To suppress the thermal stress in high-power semiconductor laser array packaging, the classic asymmetric heat dissipation structure of the array packaging was transformed into a symmetric one by incorporating microchannel heat sinks. This effectively reduced the maximum temperature, maximum thermal stress, thermal resistance, and maximum vertical displacement of the semiconductor laser array. Using the response surface methodology, mathematical models were established to correlate the maximum temperature, maximum thermal stress, and maximum vertical displacement of the semiconductor laser array with the radius, height, and spacing of circular micro-pin fins. A genetic algorithm was then employed to perform multi-objective optimization of these parameters. The results demonstrate that, compared to the original packaging configuration, the optimized semiconductor laser array exhibits a maximum temperature reduction of 16.56 °C, a maximum thermal stress decrease of 24.01 MPa, and a reduction in the maximum vertical displacement of the chip by 0.77 μm. Full article

Brillouin frequency shift (BFS) of distributed optical fiber sensor is extracted from the Brillouin gain spectrum (BGS), which is often characterized by Lorenz type. However, in the case of complex stress and optical fiber self damage, the BGS will deviate from Lorenz type and be asymmetric, which leads to the extraction error of BFS. In order to enhance the extraction accuracy of BFS, the Lorenz local single peak fitting algorithm was developed to fit the Brillouin gain spectrum curve, which can make the BSG symmetrical with respect to the Brillouin center frequency shift. One temperature test of a fiber-reinforced polymer (FRP) packaged sensor whose BSG curve is asymmetric was conducted to verify the idea. The results show that the local region curve of BSG processed by the developed algorithm has good symmetry, and the temperature measurement accuracy obtained by the developed algorithm is higher than that directly measured by demodulation equipment. Comparison with the reference temperature, the relative measurement error measured by the developed algorithm and BOTDA are within 4% and 8%, respectively. Full article

Die attach is a typical process that induces thermal stress in the fabrication of microelectromechanical system (MEMS) devices. One solution to this problem is attaching a portion of the die to the package. In such partial die bonding, the lack of control over the spreading of the adhesive can cause non-uniform attachment. In this case, asymmetric packaging stress could be generated and transferred to the die. The performance of MEMS devices, which employ the differential outputs of the sensing elements, is directly affected by the asymmetric packaging stress. In this paper, we proposed a die-attach structure with a pillar to reduce the asymmetric packaging stress and the changes in packaging stress due to changes in the device temperature. To verify the proposed structure, we fabricated four types of differential resonant accelerometers (DRA) with the silicon-on-glass process. We confirmed experimentally that the pillar can control the spreading of the adhesive and that the asymmetric packaging stress is considerably reduced. The simulation and experimental results indicated that the DRAs manufactured using glass-on-silicon wafers as handle substrates instead of conventional glass wafers have a structure that compensates for the thermal stress. Full article

This paper studies the stress state of a threaded fastening by using Finite Element (FE) models, applied to surgical screws in cortical bone. There is a general interest in studying the stress states induced in the different elements of a joint caused by the thread contact. Analytical models were an initial approach, and later FE models allowed detailed studies of the complex phenomena related to these joints. Different studies have evaluated standard threaded joints in machinery and structures, being the thread symmetric. However, surgical screws employ asymmetric thread geometry, selected to improve the stress level generated in the bone. Despite the interest and widespread use, there is scarce documentation on the actual effect of this thread type. In this work, we discuss the results provided by FE models with detailed descriptions of the contacts comparing differences caused by the materials of the joint, the thread geometry and the thread’s three-dimensional helical effects. The complex contacts at the threaded surfaces cause intense demand on computational resources that often limits the studies including these joints. We analyze the results provided by one commercial software package to simplify the threaded joints. The comparison with detailed FE models allows a definition of the level of uncertainty and possible limitations of this type of simplifications, and helps in making suitable choices for complex applications. Full article