Search Results (13)

We propose a simple and innovative configuration consisting of a quantum dot and micro-optical resonator that emits single photons with good directionality in a plane parallel to the substrate. In this device, a single quantum dot is placed as a light source between the slits of a triangular split-ring micro-optical resonator (SRR) supported in an optical polymer film with an air-bridge structure. Although most of the previous single photon emitters in solid-state devices emitted photons upward from the substrate, operation simulations confirmed that this configuration realizes lateral light emission in narrow regions above, below, left, and right in the optical polymer film, despite the absence of a light confinement structure such as an optical waveguide. This device can be fabricated using silica-coated colloidal quantum dots, focused ion beam (FIB) lithography, and wet etching using an oxide layer on a silicon substrate as a sacrificial layer. The device has a large tolerance to the variation in the position of the SRR in the optical polymer film and the height of the air-bridge. We confirmed that Pt-SRRs can be formed on the optical polymer film using FIB lithography. This simple lateral photon emitter is suitable for coupling with optical fibers and for fabricating planar optical quantum solid-state circuits, and is useful for the development of quantum information processing technology. Full article

Since different quantities of white blood cells (WBCs) in solution possess an adaptive osmotic pressure of cells, the WBCs themselves and in solution have similar concentrations, resulting in them having similar dielectric properties. Therefore, a microwave sensor could have difficulty in sensing the quantity variation when WBCs are in solution. This paper presents a highly sensitive, linear permittivity-inspired microwave biosensor for WBCs, counting through the evaporation method. Such a measurement method is proposed to record measurements after the cell solution is dripped onto the chip and is completely evaporated naturally. The proposed biosensor consists of an air-bridged asymmetric differential inductor and a centrally located circular fork-finger capacitor fabricated on a GaAs substrate using integrated passive fabrication technology. It is optimized to feature a larger sensitive area and improved Q-factor, which increases the effective area of interaction between cells and the electromagnetic field and facilitates the detection of their changes in number. The sensing relies on the dielectric properties of the cells and the change in the dielectric constant for different concentrations, and the change in resonance properties, which mainly represents the frequency shift, corresponds to the macroscopic change in the concentration of the cells. The microwave biosensors are used to measure biological samples with concentrations ranging from 0.25 × 10⁶ to 8 × 10⁶ cells per mL in a temperature (26.00 ± 0.40 °C) and humidity (54.40 ± 3.90 RH%) environment. The measurement results show a high sensitivity of 25.06 Hz/cells·mL⁻¹ with a highly linear response of r² = 0.99748. In addition, a mathematical modeling of individual cells in suspension is performed to estimate the dielectric constant of individual cells and further explain the working mechanism of the proposed microwave biosensor. Full article

This work proposes a microwave resonator built from gallium arsenide using integrated passive device (IPD) technology. It consists of a three-layered interlaced spiral structure with airbridges and inner interdigital structures. For integrated systems, IPD technology demonstrated outstanding performance, robustness, and a tiny size at a low cost. The airbridges were made more compact, with overall dimensions of 1590 × 800 µm² (0.038 × 0.019 λg²). The designed microwave resonator operated at 1.99 GHz with a return loss of 39 dB, an insertion loss of 0.07 dB, and a quality factor of 1.15. Additionally, an experiment was conducted on the properties of the airbridge and how they affected resistance, inductance, and S-parameters in the construction of the resonator. To investigate the impact of airbridges on the structure, E- and H-field distributions of the resonator were simulated. Furthermore, its use in sensing applications was explored. Various concentrations of glucose solutions were used in the experiment. The proposed device featured a minimum detectable concentration of 0.2 mg/mL; high sensitivity, namely, 14.58 MHz/mg·mL⁻¹, with a linear response; and a short response time. Thus, this work proposes a structure that exhibits potential in integrated systems and real-time sensing systems with high sensitivity. Full article

In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection. The air-bridge source-connection was formed using the Direct Laser Writing Grayscale Photolithography, and it directly connected the two adjacent sources and spanned the gate and drain of the multi-finger p-GaN gate device, which featured the advantages of stable self-support and large-span capabilities. Verified by the experiments, the fabricated air-bridge p-GaN gate devices utilizing the Direct Laser Writing Grayscale Photolithography presented an on-resistance of 36 Ω∙mm, a threshold voltage of 1.8 V, a maximum drain current of 240 mA/mm, and a breakdown voltage of 715 V. The results provide beneficial design guidance for realizing large gate-width p-GaN gate high-electron-mobility transistor devices. Full article

This article introduces a novel transition between coplanar waveguide (CPW) and air-filled rectangular waveguide (RWG). A rectangular radiator etched with a semi-elliptic slot is connected to the center conductor of CPW to realize the transition, which broadens the bandwidth. This direct transition does not require intermediate transition or air-bridges. Moreover, the planar circuit of the transition can be designed with high- and low-permittivity materials (ε_r = 10.2 and 2.22), which offer more benefits in both PCB and MMIC design. Two back-to-back transition prototypes at X-band are designed, fabricated and measured. The 15 dB fractional bandwidths are expanded to 44.7% and 47.6% respectively, which have been demonstrated in both of the transitions (ε_r = 10.2 and 2.22). The measurement results agree well with simulation results, which validate the feasibility of this design. Full article

In this study, we propose a miniaturized bandpass filter (BPF) developed by combining an approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge structures fabricated on a gallium arsenide (GaAs) substrate using an integrated passive device (IPD) technology. We introduced air-bridge structures into the outer metal wire to improve the capacitance per unit volume while utilizing a miniaturized chip with dimensions 1538 μm × 800 μm (0.029 λ₀ × 0.015 λ₀) for the BPF. The pattern was designed and optimized by simulating different dimensional parameters, and the group delay and current density are presented. The equivalent circuit was modeled to analysis various parasitic effect. Additionally, we described the GaAs-based micro-nano scale fabrication process to elucidate the proposed IPD technology and the physical structure of the BPF. Measurements were conducted with a center frequency of 1.53 GHz (insertion loss of 0.53 dB) and a 3-dB fractional bandwidth (FBW) of 70.59%. The transmission zero was located at 4.16 GHz with restraint of 35.86 dB. Owing to the benefits from its miniaturized chip size and high performance, the proposed GaAs-based IPD BPF was verified as an excellent device for various S-band applications, such as satellite communication, keyless vehicle locks, wireless headphones, and radar. Full article

In this study, we propose a high-performance resonator-based biosensor for mediator-free glucose identification. The biosensor is characterized by an air-bridge capacitor and fabricated via integrated passive device technology on gallium arsenide (GaAs) substrate. The exterior design of the structure is a spiral inductor with the air-bridge providing a sensitive surface, whereas the internal capacitor improves indicator performance. The sensing relies on repolarization and rearrangement of surface molecules, which are excited by the dropped sample at the microcosmic level, and the resonance performance variation corresponds to the difference in glucose concentration at the macroscopic level. The air-bridge capacitor in the modeled RLC circuit serves as a bio-recognition element to glucose concentration (${\epsilon }_{glucose}{C}_0$), generating resonant frequency shifts at 0.874 GHz and 1.244 GHz for concentrations of 25 mg/dL and 300 mg/dL compared to DI water, respectively. The proposed biosensor exhibits excellent sensitivity at 1.38 MHz per mg/dL with a wide detection range for glucose concentrations of 25–300 mg/dL and a low detection limit of 24.59 mg/dL. Additionally, the frequency shift and concentration are highly linear with a coefficient of determination of 0.98823. The response time is less than 3 s. We performed multiple experiments to verify that the surface morphology reveals no deterioration and chemical binding, thus validating the reusability and reliability of the proposed biosensor. Full article

Broadband, high-resolution, heterodyne, mid-infrared absorption spectroscopy was performed with a high-speed quantum cascade (QC) detector. By strictly reducing the device capacitance and inductance via air-bridge wiring and a small mesa structure, a 3-dB frequency response over 20 GHz was obtained for the QC detector, which had a 4.6-μm peak wavelength response. In addition to the high-speed, it exhibited low noise characteristics limited only by Johnson–Nyquist noise, bias-free operation without cooling, and photoresponse linearity over a wide dynamic range. In the detector characterization, the noise-equivalent power was 7.7 × 10⁻¹¹ W/Hz^1/2 at 4.6 μm, and it had good photoresponse linearity up to 250 mW, with respect to the input light power. Broadband and high-accuracy molecular spectroscopy based on heterodyne detection was demonstrated by means of two distributed-feedback 4.5-μm QC lasers. Specifically, several nitrous oxide absorption lines were acquired over a wavelength range of 0.8 cm⁻¹ with the wide-band QC detector. Full article

This article presents a compact quad flat no-lead (QFN)-packaged second-order bandpass filter (BPF) with intertwined inductors, a dendritic capacitor, and four air-bridge structures, which was fabricated on a gallium arsenide (GaAs) substrate by integrated passive device (IPD) technology. Air-bridge structures were introduced into an approximate octagonal outer metal track to provide a miniaturized chip size of 0.021 × 0.021 λ₀ (0.8 × 0.8 mm²) for the BPF. The QFN-packaged GaAs-based bandpass filter was used to protect the device from moisture and achieve good thermal and electrical performances. An equivalent circuit was modeled to analyze the BPF. A description of the manufacturing process is presented to elucidate the physical structure of the IPD-based BPF. Measurements were performed on the proposed single band BPF using a center frequency of 2.21 GHz (return loss of 26.45 dB) and a 3-dB fractional bandwidth (FBW) of 71.94% (insertion loss of 0.38 dB). The transmission zero is located at the 6.38 GHz with a restraint of 30.55 dB. The manufactured IPD-based BPF can play an excellent role in various S-band applications, such as a repeater, satellite communication, and radar, owing to its miniaturized chip size and high performance. Full article

In this work, a miniaturized bandpass filter (BPF) constructed of two spiral intertwined inductors and a central capacitor, with several interdigital structures, was designed and fabricated using integrated passive device (IPD) technology on a GaAs wafer. Five air-bridge structures were introduced to enhance the mutual inductive effect and form the differential geometry of the outer inductors. In addition, the design of the differential inductor combined with the centrally embedded capacitor results in a compact construction with the overall size of 0.037λ₀ × 0.019λ₀ (1537.7 × 800 μm²) where λ₀ is the wavelength of the central frequency. For the accuracy evolution of the equivalent circuit, the frequency-dependent lumped elements of the proposed BPF was analyzed and modeled through the segment method, mutual inductance approach, and simulated scattering parameters (S-parameters). Afterward, the BPF was fabricated using GaAs-based IPD technology and a 16-step manufacture flow was accounted for in detail. Finally, the fabricated BPF was wire-bonded with Au wires and packaged onto a printed circuit board for radio-frequency performance measurements. The measured results indicate that the implemented BPF possesses a center frequency operating at 2 GHz with the insertion losses of 0.38 dB and the return losses of 40 dB, respectively, and an ultrawide passband was achieved with a 3-dB fraction bandwidth of 72.53%, as well. In addition, a transmission zero is located at 5.32 GHz. Moreover, the variation of the resonant frequency with different inductor turns and metal thicknesses was analyzed through the simulation results, demonstrating good controllability of the proposed BPF. Full article

As one of the most commonly used devices in microwave systems, bandpass filters (BPFs) directly affect the performance of these systems. Among the processes for manufacturing filters, integrated passive device (IPD) technology provides high practicality and accuracy. Thus, to comply with latest development trends, a resonator-based bandpass filter with a high selectivity and a compact size, fabricated on a gallium arsenide (GaAs) substrate is developed. An embedded capacitor is connected between the ends of two divisions in a circular spiral inductor, which is intertwined to reduce its size to 0.024 λ_g × 0.013 λ_g with minimal loss, and along with the capacitor, it generates a center frequency of 1.35 GHz. The strong coupling between the two ports of the filter results in high selectivity, to reduce noise interference. The insertion loss and return loss are 0.26 dB and 25.6 dB, respectively, thus facilitating accurate signal propagation. The filter was tested to verify its high performance in several aspects, and measurement results showed good agreement with the simulation results. Full article

This paper reports on the use of gallium arsenide-based integrated passive device technology for the implementation of a miniaturized bandpass filter that incorporates an intertwined circle-shaped spiral inductor and an integrated center-located capacitor. Air-bridge structures were introduced to the outer inductor and inner capacitor for the purpose of space-saving, thereby yielding a filter with an overall chip area of 1178 μm × 970 μm. Thus, not only is the chip area minimized, but the magnitude of return loss is also improved as a result of selective variation of bridge capacitance. The proposed device possesses a single passband with a central frequency of 1.71 GHz (return loss: 32.1 dB), and a wide fractional bandwidth (FBW) of 66.63% (insertion loss: 0.50 dB). One transmission zero with an amplitude of 43.42 dB was obtained on the right side of the passband at 4.48 GHz. Owing to its miniaturized chip size, wide FBW, good out-band suppression, and ability to yield high-quality signals, the fabricated bandpass filter can be implemented in various L-band applications such as mobile services, satellite navigation, telecommunications, and aircraft surveillance. Full article

This letter presents a high-performance micro-fabricated resonator based on inscribing a meandered-line square coupling capacitor in an air-bridged circular spiral inductor on the GaAs-integrated passive device (IPD) technology. The main advantages of the proposed method, which inserts a highly effective coupling capacitor between the two halves of a circular spiral inductor, are the miniaturized size, enhanced coupling coefficient, and improved selectivity. Moreover, using an air-bridge structure utilizes the enhanced mutual inductance in which it maximizes the self-inductance by a stacking inductor layout to obtain a high coupling effect. The simulated and measured S-parameters of a prototype resonator with an effective overall circuit size of 1000 µm × 800 µm are in good agreement. The measured insertion and return losses of 0.41 and 24.21 dB, respectively, at a measured central frequency of 1.627 GHz, as well as an upper band transmission zero with a suppression level of 38.7 dB, indicate the excellent selectivity of the developed resonator. Full article