Search Results (629)

Given the increasing human exposure to electromagnetic radiation of various frequen-cies, mostly in the microwave range, awareness of potential health problems caused by this radiation has begun to grow. New building materials are being developed and tested to prevent or limit the penetration of microwave radiation, especially those frequencies that are used in mobile telephony. In contrast with the majority of the available literature on the investigation of concrete (cement) materials, in this paper, clay composite materials with the addition of nanoparticles of antimony(III)–tin(IV) oxide, zinc ferrite, iron(III) oxide, and two crystal modifications of titanium dioxide (rutile and anatase) were prepared in order to examine their effect on the absorption of electro-magnetic radiation. Nanomaterials are characterized by different physical and chemical methods. Specific surface area (B.E.T.), thermal properties (TGA/DSC), phase composition (PXRD), morphology (SEM), and chemical and mineralogical composition (EDX, and ED–XRF,) were determined. Thermal conductivity of clay composites was tested, and these materials showed a positive effect on the thermal conductivity (λ) of the composite: a reduction of 10–33%. The reflection and transmission coefficients of microwave radiation in the frequency range used in mobile telephony (1.5–4.0 GHz) were determined. From these data, the absolute value of radiation absorption in the materials was calculated. The results showed that the addition of the tested nanomaterials in a mass fraction of 3 to 5 wt.% significantly increases the absorption (reduces the penetration) of microwave radiation. Two nanomaterials, Sb₂O₃·SnO₂ and TiO₂ (rutile), have proven to be particularly effective: the reduction in transmission is 30–50%. The results of the test were correlated with the crystal structures of the examined nanomaterials. The inclusion of titanium dioxide and antimony-doped tin oxide into the clay led to a significant enhancement in microwave electromagnetic radiation absorption, which can be attributed to their interaction with the dielectric and conductive phases present in clay-based building materials. Full article

A3B5 nanowires are usually grown via the vapor-liquid-solid mechanism. Species from the vapor are incorporated into the nanowires using a catalyst droplet. Typically, the droplet is a low-melting-point eutectic alloy of catalyst and group III metal. This growth imposes a set of limitations on the heterostructure formation and doping. Axial A3B5 heterostructure nanowires obtained via an interchange of group III metals suffer from blurring and kinking. Amphoteric dopants such as Si could act as donors and acceptors, leading to electron-to-hole ratio oscillations along the nanowire. To overcome these limits, the growth with a catalyst, which could dissolve both components of the nanowire, is studied. Tin has a eutectic with both components, As and Ga. This makes the growth of GaAs nanowires with a tin catalyst different from that with standard catalysts. Nanowire growth occurs with at least two types of catalysts, Ga-rich and Ga-poor (As-rich). This article aims to study the nanowire growth with an Sn catalyst. For the first time, the growth of GaAs nanowires using a tin catalyst by molecular beam epitaxy is shown. Tin can serve as a catalyst not only for the chemical growth of GaAs nanowires but also as a nucleation site for their growth. Both compositions of the catalyst are observed. The annealing of a thin film of tin on a Si and GaAs substrate has also been studied. At temperatures below 450 °C, small metal droplets form, while tin dissolves into the substrate at higher temperatures. Full article

The discharge of dye-laden effluents remains an environmental challenge since conventional treatments remove color but not the organic load. This study systematically compared anodic oxidation (AO), electro-Fenton (EF), and photoelectro-Fenton (PEF) processes for three representative industrial dyes, such as Coriasol Red CB, Brown RBH, and Blue VT, and their ternary mixture, using boron-doped diamond (BDD) and Ti/IrO₂–SnO₂–Sb₂O₅ (MMO) anodes. Experiments were conducted in a batch reactor with 50 mM Na₂SO₄ at pH = 3.0 and current densities of 20–60 mA cm⁻². Kinetic analysis showed that AO-BDD was most effective at low pollutant loads, EF-BDD became superior at medium loads due to efficient H₂O₂ electrogeneration, and PEF-MMO dominated at higher loads by fast UVA photolysis of surface Fe(OH)²⁺ complexes. In a ternary mixture of 120 mg L⁻¹ of dyes, EF-BDD and PEF-MMO achieved >98% decolorization in 22–23 min with pseudo-first-order rate constants of 0.111–0.136 min⁻¹, whereas AO processes remained slower. COD assays revealed partial mineralization of 60–80%, with EF-BDD providing the most consistent reduction and PEF-MMO minimizing treatment time. These findings confirm that decolorization overestimates efficiency, and electrode selection must be tailored to dye structure and effluent composition. Process selection rules allow us to conclude that EF-BDD is the best robust dark option, and PEF-MMO, when UVA is available, offers practical guidelines for cost-effective electrochemical treatment of textile wastewater. Full article

Zinc oxide (ZnO) nanomaterials have emerged as promising candidates for gas sensing applications due to their high sensitivity, fast response–recovery cycles, thermal and chemical stability, and low fabrication cost. However, the performance of pristine ZnO remains limited by high operating temperatures, poor selectivity, and suboptimal detection at low gas concentrations. To address these limitations, significant research efforts have focused on dopant incorporation and polymer hybridization. This review summarizes recent advances in dopant engineering using elements such as Al, Ga, Mg, In, Sn, and transition metals (Co, Ni, Cu), which modulate ZnO’s crystal structure, defect density, carrier concentration, and surface activity—resulting in enhanced gas adsorption and electron transport. Furthermore, ZnO–polymer nanocomposites (e.g., with polyaniline, polypyrrole, PEG, and chitosan) exhibit improved flexibility, surface functionality, and room-temperature responsiveness due to the presence of active functional groups and tunable porosity. The synergistic combination of dopants and polymers facilitates enhanced charge transfer, increased surface area, and stronger gas–molecule interactions. Where applicable, sol–gel-based studies are explicitly highlighted and contrasted with non-sol–gel routes to show how synthesis controls defect chemistry, morphology, and sensing metrics. This review provides a comprehensive understanding of the structure–function relationships in doped ZnO and ZnO–polymer hybrids and offers guidelines for the rational design of next-generation, low-power, and selective gas sensors for environmental and industrial applications. Full article

Achieving room-temperature exciton–polariton condensation represents a frontier challenge in condensed matter physics and optoelectronics. However, its mainstream approach—distributed Bragg reflector (DBR) microcavities—faces widespread application challenges due to complex fabrication and high costs. Here, we report direct observation of the interaction between exciton and microcavity photons in Sn-doped CdS microsheet without extreme fabrication conditions. In situ PL and Raman mapping demonstrate the formation of superlattice structure. Using angle-resolved photoluminescence (ARPL) spectroscopy, we obtain Rabi splitting of polaritons up to 140 meV, and the exciton-like and photon-like components in low-polariton states at different cavity–exciton detuning were revealed at room temperature. Our work demonstrates the origin of optical microcavities and the light–matter coupling in CdS/CdS:SnS₂ superlattice microwires. Full article

Recent advances in nanotechnology, including the development of nanoparticles, thin films, and superlattices, have revitalized research in thermoelectricity by enabling independent control of thermal and electrical transport, overcoming longstanding efficiency limitations and expanding opportunities for sustainable energy generation and miniaturized device applications. Tin dioxide (SnO₂) has recently attracted increasing attention as a thermoelectric material owing to its properties, such as high-temperature chemical and structural stability, non-toxicity, and the abundance of constituent elements. Current research efforts have been directed toward enhancing its thermoelectric performance through strategies such as elemental doping, nanostructuring, strain engineering, and the development of composite systems. In this study, we investigate the effects of Mg substitutional doping on the thermoelectric characteristics of SnO₂. We synthesize undoped and Mg-doped SnO₂ nanoparticles (0.05%, 0.10%, and 0.15%) using a straightforward hydrothermal technique. The investigation of the undoped and doped materials revealed that SnO₂ possesses a tetragonal rutile-type structure, as determined through structural and morphological examination. The crystalline size of all of the samples decreases as the Mg doping concentration is increased. Hall measurement and Seebeck coefficient measurements have been employed for assessing the thermoelectric characteristics. As the Mg content increased, both the Seebeck coefficient and electrical conductivity value increased from −20 $\mathsf{\mu }$V/K to −91 $\mathsf{\mu }$V/K and 29.8 S/cm to 112.6 S/cm, confirming the presence of semiconductor behavior. The 0.15% Mg-doped sample demonstrates the highest power factor when evaluated at a temperature of 150 K, yielding a value of 9.4 $\times {10}^{-5}$ WK⁻²m⁻¹. Full article

Building energy conservation through the development of transparent thermal insulation materials that selectively block near-infrared radiation while maintaining visible light transmittance has emerged as a key strategy for global carbon neutrality. WO₃ is a semiconductor oxide with near-infrared absorption capabilities. However, the limited absorption efficiency and narrow spectral coverage of pure WO₃ significantly diminish its overall transparent thermal insulation performance, thereby restricting its practical application in energy-saving glass. Therefore, this study successfully prepared Sn-doped WO₃ materials using a one-step hydrothermal method, controlling the Sn:W molar ratio from 0.1:1 to 2.0:1. Through evaluation of transparent thermal insulation performance of a series of Sn-doped WO₃ samples, we found that Sn:W = 0.9:1 exhibited the most excellent performance, with NIR shielding efficiency reaching 93.9%, which was 1.84 times higher than pure WO₃. Moreover, this sample demonstrated a transparent thermal insulation index (THI) of 4.38, representing increases of 184% and 317%, respectively, compared to pure WO₃. These enhancements highlight the strong NIR absorption capability achieved by Sn-doped WO₃ through structural regulation. When Sn doping reaches a certain concentration, it triggers a structural transformation of WO₃ from monoclinic to tetragonal phase. After reaching the critical solubility threshold, phase separation occurs, forming a multiphase structure composed of a Sn-doped WO₃ matrix and secondary SnO₂ and WSn_0.33O₃ phases, which synergistically enhance oxygen vacancy formation and W⁶⁺ to W⁵⁺ reduction, achieving excellent NIR absorption through small polaron hopping and localized surface plasmon resonance effects. This study provides important insights for developing high-performance transparent thermal insulation materials for energy-efficient buildings. Full article

In this study, two types of gas sensors—silicone-based interdigital electrode and silicon micropillar sensors based on rGO and rGO/SnO₂—were fabricated. Their gas-sensing performance was investigated at room temperature. First, interdigital electrodes of different channel widths were fabricated to investigate the impact of the channel width parameter. Subsequently, the rGO/SnO₂ doping ratio in the composite material was varied to identify the optimal composition for gas sensitivity. Additionally, triangular and square-arrayed silicon micropillar substrates were fabricated via photolithography and inductively coupled plasma etching. The rGO/SnO₂-based gas sensor on a silicon micropillar substrate exhibited an ultra-high specific surface area. The triangular micropillar arrangement of rGO/SnO₂-160 demonstrates the best performance, showing approximately 14% higher response and a 106 s reduction in response time compared with interdigital electrode sensors spray-coated with the same concentration of rGO/SnO₂ when tested at room temperature under 250 ppm NO₂. The optimized sensor achieves a detection limit as low as 5 ppm and maintains high responsiveness, even in conditions of 60% relative humidity (RH). Additionally, the repeatability, selectivity, and stability of the sensor were evaluated. Finally, structural and morphological characterization was conducted using XRD, SEM, TEM, and Raman spectroscopy, which confirmed the successful modification of rGO with SnO₂. Full article

Indium phosphide (InP) is a promising photoactive material for solar-driven hydrogen production owing to its optimal bandgap, high carrier mobility, and broad solar absorption. However, conventional InP fabrication relies on costly wafers and toxic precursors, limiting its scalability and sustainability. Here, we demonstrate a simple and environmentally friendly route to synthesize n-type InP thin-film photoanodes by phosphidating indium films prepared via doctor blade coating on ITO substrates, using NaH₂PO₂ as a phosphorus source. Structural and spectroscopic analyses (XRD, Raman, XPS, PL) confirmed the successful formation of crystalline InP with optimum quality at 425 °C. Photoelectrochemical measurements revealed a significant photocurrent density of 1.8 mA·cm⁻² under AM 1.5 illumination, with extended photoresponse into the near-infrared region. Mott–Schottky and EIS analyses indicated efficient charge separation, low transfer resistance, and unintentional n-type doping due to Sn diffusion from the ITO substrate. This facile and green synthesis route not only provides a scalable approach to III–V semiconductors but also highlights InP thin films as cost-effective and efficient photoanodes for sustainable solar hydrogen generation. Full article

In this article, we present density functional theory (DFT) calculations for $Z{n}_{(1-x)}{M}_{x}O$, where M represents one of the following substitutional metallic impurities: Ga, Cd, Cu, Pd, Ag, In, or Sn. Our study is based on the wurtzite structure of pristine ZnO. We employ the Quantum Espresso package, using a fully unconstrained implementation of the generalized gradient approximation (GGA) with an additional U correction for exchange and correlation effects. We analyze the density of states, energy gaps, and absorption spectra for these doped systems, considering the limitations of a finite-size cell approximation. Rather than focusing on precise numerical values, we highlight the following two key aspects: the location of impurity-induced electronic states and the overall trends in optical properties across the eight systems, including pristine ZnO. Our results indicate that certain dopants introduce electronic levels within the band gap, which enhance optical absorption in the visible, near-infrared, and near-ultraviolet regions. For instance, Sn-doped ZnO shows a pronounced absorption peak at ∼2.5 eV, which is in the middle of the visible spectrum. In the case of Ag and Pd impurities, they lead to increased electromagnetic radiation absorption at the near ultra-violet spectrum. This represents a promising performance for efficient solar radiation absorption, both at the Earth’s surface and in outer space. Furthermore, Ga- and In-doped ZnO present bandgaps of ∼0.9 eV, promising an interesting performance in the near infrared region. These findings suggest potential applications in solar energy harvesting and selective sensors. Full article

This paper describes two low-cost, modular instruments developed for rapid room-temperature characterization of mainly thermoelectrics. The first instrument measures the Seebeck coefficient across diverse sample geometries and incorporates a four-point probe configuration for simultaneous electrical conductivity measurement, including disk-shaped samples. The second instrument implements the Van der Pauw method, enabling detailed investigation of charge carrier behavior within materials. Both devices prioritize accessibility, constructed primarily from 3D-printed components, basic hardware, and readily available instrumentation, ensuring ease of reproduction and modification. A unique calibration protocol using pure elemental disks and materials with well-established properties was employed for both instruments. Validation against comparable systems confirmed reliable operation. Control and data acquisition software for both devices was developed in-house and is fully documented and does not require an experienced operator. We demonstrate the utility of these instruments by characterizing the electronic properties of polycrystalline SnSe thermoelectric materials doped with Bi, Ag, and In. The results reveal highly complex charge carrier behavior significantly influenced by both dopant type and concentration. Full article

In this work, the gas sensing properties and adsorption mechanisms of Ag- and Au-doped SnSe₂ monolayers toward NO, NO₂, SO₂, H₂S, and HCN were systematically investigated via first-principles calculations. The results demonstrate that NO₂ exhibits the strongest interaction and the highest charge transfer in both doped systems, indicating superior sensing selectivity. Biaxial strain (ranging from −8% to 6%) was further applied to modulate adsorption behavior. By evaluating changes in equilibrium height, adsorption energy, charge transfer, and recovery time across ten representative adsorption systems, it was found that both compressive and tensile strains enhance the interaction between gas molecules and doped SnSe₂ monolayers. Specifically, H₂S/Au–SnSe₂ and HCN/Au–SnSe₂ are highly sensitive to tensile strain, while NO/Au–SnSe₂, H₂S/Ag–SnSe₂, NO/Ag–SnSe₂, and NO₂/Ag–SnSe₂ respond more strongly to compressive strain. Systems such as NO₂/Au–SnSe₂, SO₂/Au–SnSe₂, and SO₂/Ag–SnSe₂ respond to both types of strain, whereas HCN/Ag–SnSe₂ shows relatively low sensitivity in charge transfer. Recovery time analysis indicates that NO₂ exhibits the slowest desorption kinetics and is most affected by strain modulation. Nevertheless, increasing the operating temperature or applying appropriate strain can significantly shorten recovery times. While other gas systems show smaller variations, strain engineering remains an effective strategy to tune desorption behavior and enhance overall sensor performance. These findings offer valuable insights into strain-tunable gas sensing behavior and provide theoretical guidance for the design of high-performance gas sensors based on two-dimensional SnSe₂ materials. Full article

Lead-free perovskite variants have emerged as promising candidates due to their self-trapped exciton emission. However, in ASnX₃ systems, facile oxidation of Sn(II) to Sn(IV) yields A₂SnCl₆ vacancy-ordered derivatives. Paradoxically, despite possessing a direct bandgap, these variants exhibit diminished photoluminescence (PL). Doping engineering thus becomes essential for precise optical tailoring of A₂SnX₆ materials. Herein, through integrated first-principles calculations and spectroscopic analysis, we elucidate the luminescence mechanism in Te⁴⁺-doped (NH₄)₂SnCl₆ lead-free perovskites. Density functional theory, X-ray diffraction (XRD) patterns and X-ray photoelectron spectroscopy (XPS) confirm Te⁴⁺ substitution at Sn sites via favorable chemical potentials. Spectral interrogations, including absorption and emission profiles, reveal that the intense emission originates from the triplet STE recombination (³P₁ → ¹S₀) of Te centers. Temperature-dependent PL spectra further demonstrate strong electron–phonon coupling that induces symmetry-breaking distortions to stabilize STEs. Complementary electronic band structure and molecular orbital calculations unveil the underlying photophysical pathway. Leveraging these distinct thermal responses of PL intensity and peak position, 0.5%Te:(NH₄)₂SnCl₆ emerges as a highly promising candidate for non-contact, dual-parameter optical thermometry over an ultra-broad range (100–400 K). This work provides fundamental insights into the exciton dynamics and thermal engineering of optical properties in this material system, establishing its significant potential for advanced temperature-sensing applications. Full article

In order to elucidate the mechanism creating superconductivity in the 2-dimensional layer of a p-doped Sn/Si(111) surface, we have analyzed the many-body effects associated with the electron-phonon (e-ph) coupling and the electron–electron interaction. First, we have calculated the DFT surface band of the system and the coupling associated with the different interactions. In our calculations we find a mean field (DFT) electron bandwidth of 0.54 eV, an attractive coupling $U^{neg}=0.32$ eV associated with the e-ph coupling and an effective electron–electron Hubbard repulsion of $U=0.83$ eV. Then, we analyze the Hubbard Hamiltonian, neglecting in this step the e-ph coupling that is much smaller than the Hubbard coupling, by considering a p-doping in this Hamiltonian of 10%; by means of a Dynamical Mean Field (DMF) approach combined with an interpolative calculation for the self-energy, we deduce the local density of states (DOS) and show that the quasi-particle DOS induced by the doping is not large enough to induce magnetism in the Sn-monolayer. This leads us to analyze the possibility of having superconductivity by considering the attractive interaction induced by the e-ph coupling within an appropriate BCS-Hamiltonian. Our calculations show that the quasiparticle metallic system has a superconductivity critical temperature of ≈7–9 K, in good agreement with experiments. Full article

In nondestructive evaluation of concrete structures, the far-infrared region, including terahertz waves, which can penetrate concrete and measure the amount of corrosion in the internal steel, has attracted much attention. Magnetite has the potential to be used as a far-infrared detection device that meets the requirements for nondestructive evaluation devices, such as room temperature operation and portability, while also having a low environmental impact. In this study, the sensitivity of magnetite thin films with different concentrations of Pt to electromagnetic waves at a wavelength of 10.6 μm was evaluated and compared: a nanocomposite with Pt nanocrystals dispersed in magnetite thin films was prepared by radio frequency sputtering, electrodes were prepared by a photoresist process, and the resistance variation was recorded after irradiation with 10.6 μm pulse electromagnetic waves. As a result, it was experimentally confirmed that the peak of response was the maximum at the amount of Pt added, where the electrical resistivity reached 12,000 µΩcm, and the S/N ratio was the maximum at the amount of Pt added, where the electrical resistivity reached 14,000 µΩcm. This indicates that Pt-doped magnetite with a Pt content of 14,000 µΩcm electrical resistivity is suitable as a far-infrared detector element material. Full article