Search Results (167)

The development of compact, energy-efficient integrated lasers operating at 1.3 µm re-mains a critical focus in silicon photonics, essential for advancing data communications and optical interconnect technologies. This paper presents a numerical study of distributed Bragg reflector (DBR) hybrid III-V-on-silicon lasers, analyzing design trade-offs and optimization strategies based on supermode theory. The III-V section of the design incorporates InAs/(Al)GaAs quantum dots (QDs), which offer improved temperature insensitivity at the cost of more complex III-V/Si optical coupling, due to the high refractive index of (Al)GaAs. Consequently, many current laser designs rely on silicon waveguides with a thickness exceeding 220 nm, which helps coupling but limits their compatibility with standard CMOS technologies. To address this challenge, we perform detailed simulations focusing on 220-nm-thick silicon waveguides. We first examine how the mode profiles jointly depend on the silicon waveguide dimensions and the geometry and composition of the III-V stack. Based on this analysis, we propose a novel epitaxial design that enables effective III-V/Si coupling, with the optical mode strongly confined within the III-V waveguide in the gain section and efficiently transferred to the silicon waveguide in the passive sections. Moreover, the final design is shown to be robust to fabrication-induced deviations from nominal parameters. Full article

In this paper, we study the line-shape (LS), which indicates the amount of absorbed energy, and the line-width (LW), which indicates the scattering factor, according to the vibrational direction of the externally applied energy in the electron–phonon potential interaction system of representative semiconductor bonding types, group II–VI (ZnO) and group III–V (GaN) bonded compound semiconductors and pure group IV (Si) bonded semiconductors. One of the two systems receives the externally applied energy of right-handed circular polarization vibration, and the other receives the externally applied energy of left-handed circular polarization vibration. To analyze the quantum transport, we first employ quantum transport theory (QTR) for an electron system confined within a square-well potential, where the projected Liouville equation is addressed using the balanced-average projection method. In analyzing quantum transitions, phonon emission is linked to the transition line-width (LW), whereas phonon absorption is evaluated through the transition line-shape (LS), highlighting its sensitivity to temperature and magnetic field variations. As a result of analyzing the line-width (LW), which is a quantum scattering coefficient, and the line-shape (LS), which represents the absorbed power, the absorbed power and scattering coefficient were higher for the left circularly polarized vibration under the influence of the external magnetic field. In contrast, the right polarization produced smaller values. In addition, the scattering coefficient (LW) and the absorbed power according to the bonding type of the semiconductor were the largest in Si, a group IV bonded semiconductor, followed by group III–V (GaN) and group II–VI (ZnO) bonded semiconductors. Full article

This paper presents three simple and efficient advanced optimization algorithms, namely the best–worst–random (BWR), best–mean–random (BMR), and best–mean–worst–random (BMWR) algorithms designed to address unconstrained and constrained single- and multi-objective optimization tasks of the metal casting processes. The effectiveness of the algorithms is demonstrated through real case studies, including (i) optimization of a lost foam casting process for producing a fifth wheel coupling shell from EN-GJS-400-18 ductile iron, (ii) optimization of process parameters of die casting of A360 Al-alloy, (iii) optimization of wear rate in AA7178 alloy reinforced with nano-SiC particles fabricated via the stir-casting process, (iv) two-objectives optimization of a low-pressure casting process using a sand mold for producing A356 engine block, and (v) four-objectives optimization of a squeeze casting process for LM20 material. Results demonstrate that the proposed algorithms consistently achieve faster convergence, superior solution quality, and reduced function evaluations compared to simulation software (ProCAST, CAE, and FEA) and established metaheuristics (ABC, Rao-1, PSO, NSGA-II, and GA). For single-objective problems, BWR, BMR, and BMWR yield nearly identical solutions, whereas in multi-objective tasks, their behaviors diverge, offering well-distributed Pareto fronts and improved convergence. These findings establish BWR, BMR, and BMWR as efficient and robust optimizers, positioning them as promising decision support tools for industrial metal casting. Full article

The development of an integrated circuit faces the challenge of the physical limit of Moore’s Law. One of the most important “Beyond Moore” challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) versus their increasing static power consumption. This is because, at room temperature, the thermal emission transportation mechanism will cause a physical limitation on subthreshold swing (SS), which is fundamentally limited to a minimum value of 60 mV/decade for MOSFETs, and accompanied by an increase in off-state leakage current with the process of scaling down. Moreover, the impacts of short-channel effects on device performance also become an increasingly severe problem with channel length scaling down. Due to the band-to-band tunneling mechanism, Tunnel Field-Effect Transistors (TFETs) can reach a far lower SS than MOSFETs. Recent research works indicated that TFETs are already becoming some of the promising candidates of conventional MOSFETs for ultra-low-power applications. This paper provides a review of some advances in materials and structures along the evolutionary process of TFETs. An in-depth discussion of both experimental works and simulation works is conducted. Furthermore, the performance of TFETs with different structures and materials is explored in detail as well, covering Si, Ge, III-V compounds and 2D materials, alongside different innovative device structures. Additionally, this work provides an outlook on the prospects of TFETs in future ultra-low-power electronics and biosensor applications. Full article

The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of fully relaxed GaAs nanoislands on complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers. Nanotip wafers were fabricated using a state-of-the-art 0.13 μm SiGe Bipolar CMOS pilot line on 200 mm wafers. Our investigation focuses on understanding the influence of the growth conditions on the morphology, crystalline structure, and defect formation of the GaAs islands. The morphological, structural, and optical properties of the GaAs islands were characterized using scanning electron microscopy, high-resolution X-ray diffraction, and photoluminescence spectroscopy. For samples with less deposition, the GaAs islands exhibit a monomodal size distribution, with an average effective diameter ranging between 100 and 280 nm. These islands display four distinct facet orientations corresponding to the {001} planes. As the deposition increases, larger islands with multiple crystallographic facets emerge, accompanied by a transition from a monomodal to a bimodal growth mode. Single twinning is observed in all samples. However, with increasing deposition, not only a bimodal size distribution occurs, but also the volume fraction of the twinned material increases significantly. These findings shed light on the growth dynamics of nanoheteroepitaxial GaAs and contribute to ongoing efforts toward CMOS-compatible Si-based nanophotonic technologies. Full article

Inorganic arsenic [As(III) and As(V)] is a pervasive environmental contaminant in groundwater systems, early-life exposure to which is associated with an impaired cognitive ability and an increased risk of neurobehavioral disorders. Although the effect of As(III) on the neurons is well studied, the involvement of the microglia remains unclear. In this study, the effects of sodium arsenite (NaAsO₂) on microglial activation and the underlying NLRP3 inflammasome mechanism were determined. Pregnant rats were gavaged with NaAsO₂ (0, 1, 4, and 10 mg/kg body weight), which dissociates in aqueous solutions into bioactive arsenite species [As(OH)₃], from gestational day 1 (GD1) to postnatal day 21 (PND21). The results showed that As(III) induces learning and memory impairments and microglial activation in the hippocampus of offspring rats (PND21). Increased expression of NLRP3, the activation of caspase-1, and the production of interleukin-1β were observed in both the hippocampus of As(III)-exposed offspring rats and As(III)-exposed microglial BV2 cells under culture conditions. Interestingly, blocking the NLRP3 inflammasome using MCC950 mitigated its activation. Furthermore, inhibition of NADPH oxidase 2 (NOX2) using apocynin or specific siRNA significantly reduced As(III)-induced microglial NLRP3 inflammasome activation. In addition, inactivation of the microglial NLRP3 inflammasome or NOX2 markedly rescued As(III)-induced neurotoxicity in the hippocampal HT22 cells. Taken together, this study reveals that NOX2/NLRP3-inflammasome-dependent microglial activation promotes As(III)-induced learning and memory impairments in developmental rats. Full article

One-dimensional TiO₂ nanotube arrays (TNAs) were vertically aligned and obtained via the electrochemical anodization method. In this study, Bi₂S₃-TiO₂-SiO₂/TNA heterojunction photocatalysts were successfully prepared with different amounts of Bismuth(III) sulfide (Bi₂S₃) loading on the TNAs by the successive ionic layer adsorption and reaction (SILAR) method and characterized by X-ray diffraction (XRD) patterns, field-emission scanning electron microscope–energy-dispersive spectroscopy (FESEM-EDS), Fourier transform infrared (FTIR) spectra, ultraviolet-visible diffuse reflectance spectra (UV–Vis/DRS), and electrochemical impedance spectroscopy (EIS) techniques. The photocatalytic performances of the samples were investigated by degrading Basic Yellow 28 (BY 28) under visible-light irradiation. Optimization of the condition using the response surface methodology (RSM) and central composite rotatable design (CCRD) technique resulted in the degradation of BY 28 dye, showing that the catalyst with 9.6 mg/cm² (designated as Bi₂S_3(9.6)-TiO₂-SiO₂/TNA) showed the maximum yield in the degradation process. The crystallite size of about 17.03 nm was estimated using the Williamson–Hall method. The band gap energies of TiO₂-SiO₂/TNA and Bi₂S_3(9.6)-TiO₂-SiO₂/TNA were determined at 3.27 and 1.87 eV for the direct electronic transitions, respectively. The EIS of the ternary system exhibited the smallest arc diameter, indicating an accelerated charge transfer rate that favors photocatalytic activity. Full article

Nipah virus (NiV), a highly lethal zoonotic pathogen causing encephalitis and respiratory diseases with mortality rates up to 40–70%, faces research limitations due to its strict biosafety level 4 (BSL-4) containment requirements, hindering antiviral development. To address this, we generated two NiV minigenome replicons (Fluc- and EGFP-based) expressed via helper plasmids encoding viral N, P, and L proteins, enabling replication studies under BSL-2 conditions. The minigenome replicon recapitulated the cytoplasmic inclusion body (IB) formation observed in live NiV infections. We further demonstrated that IB assembly is driven by liquid–liquid phase separation (LLPS), with biochemical analyses identifying the C-terminal N core domain of the N protein, as well as N₀ and XD domains and the intrinsically disordered region (IDR) of the P protein, as essential structural determinants for LLPS-mediated IB biogenesis. The targeted siRNA silencing of the 5′ and 3′ untranslated regions (UTRs) significantly reduced replicon-derived mRNA levels, validating the regulatory roles of these regions. Importantly, the minigenome replicon demonstrated sensitivity to type I/II/III interferons and antivirals (remdesivir, azvudine, molnupiravir), establishing its utility for drug screening. This study provides a safe and efficient platform for investigating NiV replication mechanisms and accelerating therapeutic development, circumventing the constraints of BSL-4 facilities while preserving key virological features. Full article

N-polar GaN HEMTs feature a natural back-barrier and enable the formation of low-resistance Ohmic contacts, with the potential to suppress short-channel effects and current collapse effects at sub-100 nm gate lengths, rendering them particularly promising for high-frequency communication applications. In this study, N-polar GaN films were grown on C-face SiC substrates with a 4° misorientation angle via MOCVD. By employing a two-step growth process involving LT-GaN or LT-AlGaN, the surface roughness of N-polar GaN films was reduced to varying degrees, accompanied by an improvement in crystalline quality. The growth processes, including surface morphology at each growth stage, such as the AlN nucleation layer, LT-GaN, LT-AlGaN, and the initial 90 nm HT-GaN, were investigated. The results revealed that a high V/III ratio and low-temperature growth conditions for the low-temperature layers, along with the introduction of a minor amount of Al, influenced adatom migration behavior and facilitated the suppression of step bunching. Suppressing step bunching during the initial growth stages was demonstrated to be critical for improving the surface quality and crystalline quality of N-polar GaN films. An N-polar GaN HEMT epitaxial structure was successfully achieved using the optimized surface morphology with a dedicated Fe-doped buffer process. Full article

Microwave photonics (MWP) applications often require a high optical input power (>100 mW) to achieve an optimal signal-to-noise ratio (SNR). However, conventional silicon spot-size converters (SSCs) are susceptible to high optical power due to the two-photon absorption (TPA) effect. To overcome this, we introduce a silicon nitride (SiN) SSC fabricated on a silicon-on-insulator (SOI) substrate. When coupled to a tapered fiber with a 4.5 μm mode field diameter (MFD), the device exhibits low coupling losses of <0.9 dB for TE modes and <1.4 dB for TM modes at relatively low optical input power. Even at a 1W input power, the additional loss is minimal, at approximately 0.1 dB. The versatility of the SSC is further demonstrated by its ability to efficiently couple to fibers with MFDs of 2.5 μm and 6.5 μm, maintaining coupling losses below 1.5 dB for both polarizations over the entire C-band. This adaptability to different mode diameters makes the SiN SSC a promising candidate for future electro-optic chiplets that integrate heterogeneous materials such as III-V for gain and lithium niobate for modulation with the SiN-on-SOI for all other functions using advanced packaging techniques. Full article

Geochemical proxies are a reliable tool in deciphering the paleoenvironment and diagenetic alteration in carbonate rock units. The Lower Cretaceous Yamama Formation (LCYF) is an important carbonate unit of the Saudi Arabia region which has been studied in detail to evaluate the paleoenvironment and diagenetic alteration through geochemical studies. This study presents new data on petrography, stable isotopes, and trace and rare-earth elements to enhance our understanding on paleoenvironments, redox conditions, and paleosalinity during the deposition of these carbonate units. Field studies show that the formation is composed of thick-to-thin-bedded limestone. Petrographic studies show that the formation is mostly composed of mudstone, wackestone, packstone, and grainstone facies. The stable isotopic values of carbon (δ¹³C V-PDB = +0.58‰ to +2.23‰) and oxygen (δ¹⁸O V-PDB = −6.38‰ to −4.48‰) are directly within the range of marine signatures. CaCO₃’s dominance over SiO₂ and Al₂O₃ indicates minimal detrital contribution during the LCYF precipitation. The REE pattern suggests coeval marine signatures which include (i) a slight LREE depletion compared to HREEs (av. Nd/Yb_N = 0.70), (ii) negative Ce anomalies (av. Ce/Ce* = 0.5), and (iii) a positive La anomaly (av. La/La* = 1.70). Micritic limestone has low Hf (bdl to 0.4 µg/g), Sc (bdl to 2.5 µg/g), and Th (bdl to 0.8 µg/g) content, which suggests negligible detrital influence. The Ce content of different facies (Ce = 1u.80 to 12.85 µg/g) suggests that their deposition took place under oxic to dysoxic conditions. However, there is moderate variation during the deposition of MF-I, with higher Ce values as compared to MF-II, MF-III, and MF-IV, which suggests that the deposition of MF-I mostly took place in anoxic to dysoxic conditions. Full article

Nanowire heterostructures offer almost unlimited possibilities for the bandgap engineering and monolithic integration of III–V photonics with Si electronics. The growth and compositional modelling of III–V nanowire heterostructures provides new insight into the formation mechanisms and assists in the suppression of interfacial broadening and optimization of optical properties. Different models have been proposed in the past decade to calculate the interfacial profiles in axial nanowire heterostructures mainly grown by molecular beam epitaxy and metal–organic vapour phase epitaxy. Based on various assumptions, existing models have different sets of parameters and can yield varying results and conclusions. By focusing on deterministic models based on classical nucleation theory and kinetic growth theory of III–V ternary monolayers in nanowires, we summarize recent advancements in the modelling of axial heterostructures in III–V nanowires, describe and classify the existing models, and determine their applicability to predictive modelling and to the fitting of the available experimental data. In particular, we consider the coordinate-dependent generalizations of the equilibrium, nucleation-limited, kinetic, and regular growth models to make interfacial profiles across axial heterostructures in different III–V nanowires. We examine the factors influencing the interfacial abruptness, discuss the governing parameters, limitations, and modelling of particular material systems, and highlight the areas that require further research. Full article

We study field effect nanotransistor devices in the Si/SiO₂ material system which are based on lateral resonant tunneling between two parallel conduction channels. After introducing a simple piecewise linear potential model, we calculate the quantum transport properties in the R-matrix approach. In the transfer characteristics, we find a narrow resonant tunneling peak around zero control voltage. Such a narrow resonant tunneling peak allows one to switch the drain current with small control voltages, thus opening the way to low-energy applications. In contrast to similar double electron layer tunneling transistors that have been studied previously in III-V material systems with much larger channel lengths, the resonant tunneling peak in the drain current is found to persist at room temperature. We employ the R-matrix method in an effective approximation for planar systems and compare the analytical results with full numerical calculations. This provides a basic understanding of the inner processes pertaining to lateral tunneling transport. Full article

Cobaltocenium-containing (co)polysiloxanes (Cc-PDMSs) with terminal and side groups were synthesized by the reaction of catalyst-free hydroamination between ethynylcobaltocenium hexafluorophosphate and polysiloxanes comprising amino moieties as terminal and side groups. The conversion of NH₂ groups in the polymers reaches 85%. The obtained (co)polysiloxanes “gelate” due to an increase in their molecular weight by approx. 30 times, when stored at room temperature over one week. “Gelated” Cc-PDMSs remain soluble in most polar solvents. The structure of Cc-PDMSs and the mechanism of “gelation” were established by ¹H, ¹³C{¹H}, ²⁹Si{¹H}, ¹⁹F{¹H}, ³¹P{¹H} nuclear magnetic resonance, infrared, ultraviolet–visible, and X-ray photoelectron spectroscopies. As determined by cyclic voltammetry, Cc-PDMSs possess redox properties (Co^II/Co^III transitions at E_1/2 = −1.8 and −1.3 V before and after “gelation”, respectively). This synthetic approach allows to increase the molecular weights of the synthesized polysiloxanes functionalized with cobaltocenium groups easily, leading to their higher film-forming ability, which is desirable for some electronic applications. Cc-PDMSs can be utilized as redox-active polymer films in modified electrodes, electrochromic devices, redox-active coatings, and components for batteries. Full article

Fe(III) oxides were prepared as free nanoparticles and on DNA templates via the precipitation of Fe(III) salts with NaOH in the presence/absence of DNA. Through control of the pH and temperature, FeOOH and Fe₂O₃ were synthesised. The formation of templated materials FeOOH/DNA and Fe₂O₃/DNA was confirmed using UV-Vis absorption and FTIR spectra. The direct optical gap of Fe₂O₃/DNA was estimated as 3.2 eV; the absorption by FeOOH/DNA and Fe₂O₃/DNA at longer wavelengths is weaker, but consistent with indirect gaps near 2 eV. X-ray photoelectron spectra confirmed the presence of Fe(III) and DNA in the templated samples. Analysis of the X-ray diffraction patterns of both templated and non-templated FeOOH and Fe₂O₃ demonstrated that the materials were the α-FeOOH and α-Fe₂O₃ polymorphs with crystallite diameters of the DNA-templated materials estimated as 7.6 nm and 6.8 nm. Transmission electron microscopy showed needle-like crystals of both FeOOH and Fe₂O₃, but the Fe₂O₃ contains some globular structures. In contrast, the morphology of FeOOH/DNA and Fe₂O₃/DNA consists of needle-like crystallites of the respective oxides organised into complex dendritic structures with a length on the 10 μm scale formed by the DNA molecules. Finally, scanned conductance microscopy provided evidence for the conductivity of the FeOOH/DNA after alignment via molecular combing on an Si/SiO₂ substrate. Fe₂O₃/DNA did not exhibit any detectable conductivity. Full article