Search Results (18)

This paper presents a compact on-chip multiple-input multiple-output (MIMO) antenna designed for future communication systems, featuring frequency-agile elements. The antenna achieves enhanced decoupling and reduced cross-section through the integration of a metasurface, which also introduces frequency agility. Designed for the millimeter-wave band using low-loss BenzoCycloButene (BCB) polymer, the antenna is manufactured with microelectronic processes, and the dimensions are 7.54 × 7.54 × 0.055 mm³. Simulations and measurements demonstrate excellent frequency agility around 60 GHz, with gains of 6.5 to 9 dBi. As a proof of concept, open and short circuits were used for switching, with future designs aiming to incorporate diodes for a full dynamic reconfiguration. This work highlights the potential for compact, high-performance, and frequency-reconfigurable on-chip antennas in next-generation millimeter-wave systems. Full article

An integrated optical isolator is a crucial part of photonic integrated circuits (PICs). Existing optical isolators, predominantly based on the silicon-on-insulator (SOI) platform, face challenges in integrating with active devices. We propose a broadband, compact TM mode Mach–Zehnder optical isolator based on InP-on-insulator platforms. We designed two distinct magneto-optical waveguide structures, employing different methods for bonding Ce:YIG and InP, namely O₂ plasma surface activation direct wafer bonding and DVS-benzocyclobutene (BCB) adhesive bonding. Detailed calculations and optimizations were conducted to enhance their non-reciprocal phase shift (NRPS). At a wavelength of 1550 nm, the direct-bonded waveguide structure achieved a 30 dB bandwidth of 72 nm with a length difference of 0.256 µm. The effects of waveguide arm length, fabrication accuracy, and dimensional errors on the device performance are discussed. Additionally, manufacturing tolerances for three types of lithographic processes were calculated, serving as references for practical manufacturing purposes. Full article

Based on the excellent physical properties and flexible molecular modifiability, modified silicone resins have received favorable attention in the field of microelectronics, and recently a number of modified silicone resins have appeared while few breakthroughs have been made in low dielectric constant (low-k) materials field due to the limitations of structure or the curing process. In this work, functional silicone resin with different BCB contents was prepared with two monomers. The resins showed low dielectric constant (k = 2.77 at 10 MHz) and thermal stability (T_5% = 495.0 °C) after curing. Significant performance changes were observed with the increase in BCB structural units, and the functional silicone obtained does not require melting and dissolution during processing because of good fluidity at room temperature. Moreover, the mechanical properties of silicone resins can be also controlled by adjusting the BCB content. The obtained silicone resins could be potentially used in the field of electronic packaging materials. Full article

The growth of high-quality compound semiconductor materials on silicon substrates has long been studied to overcome the high price of compound semiconductor substrates. In this study, we successfully fabricated nanowire solar cells by utilizing high-quality hetero p-n junctions formed by growing n-type III-V nanowires on p-silicon substrates. The n-InAs_0.75P_0.25 nanowire array was grown by the Volmer–Weber mechanism, a three-dimensional island growth mode arising from a lattice mismatch between III-V and silicon. For the surface passivation of n-InAs_0.75P_0.25 core nanowires, a wide bandgap InP shell was formed. The nanowire solar cell was fabricated by benzocyclobutene (BCB) filling, exposure of nanowire tips by reactive-ion etching, electron-beam deposition of ITO window layer, and finally metal grid electrode process. In particular, the ITO window layer plays a key role in reducing light reflection as well as electrically connecting nanowires that are electrically separated from each other. The deposition angle was adjusted for conformal coating of ITO on the nanowire surface, and as a result, the lowest light reflectance and excellent electrical connectivity between the nanowires were confirmed at an oblique deposition angle of 40°. The solar cell based on the heterojunction between the n-InAs_0.75P_0.25/InP core-shell nanowire and p-Si exhibited a very high photoelectric conversion efficiency of 9.19% with a current density of 27.10 mA/cm², an open-circuit voltage of 484 mV, and a fill factor of 70.1%. Full article

Benzocyclobutene-modified silsesquioxane (BCB-POSS) and divinyl tetramethyl disiloxane-bisbenzocyclobutene (DVS-BCB) prepolymer were introduced into the containing benzocyclobutene (BCB) unit matrix resin P(4-MB-co-1-MP) polymerized from 1-methyl-1-(4-benzocyclobutenyl) silacyclobutane (4-MSCBBCB) and 1-methyl-1-phenylsilacyclobutane (1-MPSCB), respectively. The low dielectric constant (low-k) siloxane/carbosilane hybrid benzocyclobutene resin composites, P(4-MB-co-1-MP)/BCB-POSS and P(4-MB-co-1-MP)/DVS-BCB, were prepared. The curing processes of the composites were assessed via Fourier-transform infrared spectroscopy (FTIR) and differential scanning calorimetry (DSC). The effects on dielectric properties and heat resistance of those composites with different proportion of BCB-POSS and DVS-BCB were investigated using an impedance analyzer and thermogravimetric analyzer (TGA), respectively. The thermal curing of composites could be carried out by ring-opening polymerization (ROP) of the BCB four-member rings of BCB-POSS or DVS-BCB and those of P(4-MB-co-1-MP). With increasing the proportion of BCB-POSS to 30%, the 5% weight loss temperature (T_5%) of P(4-MB-co-1-MP)/BCB-POSS composites was raised visibly, whereas the dielectric constant (k) was decreased owing to the introduction of nanopores into POSS. For P(4-MB-co-1-MP)/DVS-BCB composites, the T_5% and k were slightly raised with increasing the proportion of DVS-BCB. The above results indicated that the BCB-POSS showed advantages over conventional fillers to simultaneously improve thermostability and decrease k. Full article

Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) has attracted significant attention as an intermediate bonding material, owing to its excellent properties. However, its applications are limited, due to damage to peripheral devices at high curing temperatures and unoptimized compressive pressure. Therefore, it is necessary to explore the compressive pressure condition for DVS-BCB bonding. This study demonstrates an optimization process for void-free DVS-BCB bonding. The process for obtaining void-free DVS-BCB bonding is a vacuum condition of 0.03 Torr, compressive pressure of 0.6 N/mm², and curing temperature of 250 °C for 1 h. Herein, we define two factors affecting the DVS-BCB bonding quality through the DVS-BCB bonding mechanism. For strong DVS-BCB bonding, void-free and high-density chemical bonds are required. Therefore, we observed the DVS-BCB bonding under various compressive pressure conditions at a relatively low temperature (250 °C). The presence of voids and high-density crosslinking density was examined through near-infrared confocal laser microscopy and Fourier-transform infrared microscopy. We also evaluated the adhesion of the DVS-BCB bonding, using a universal testing machine. The results suggest that the good adhesion with no voids and high crosslinking density was obtained at the compressive pressure condition of 0.6 N/mm². We believe that the proposed process will be of great significance for applications in semiconductor and device packaging technologies. Full article

The design of a uniformly spaced 1 × 4 linear antenna array using epitaxial layers of benzocyclobutene over an InP substrate is demonstrated. The array elements are conjugately matched with a uni-travelling carrier photodiode at the input. The phased array is optimised to counteract mutual coupling effects by introducing metal strips with isolated ground planes for each radiating element. The proposed antenna array can provide a gain of 10 dBi with a gain variation of ±3 dB. The array operates over a bandwidth of 10 GHz (295–305 GHz) with a wide scanning angle of 100° in the broadside. Full article

This paper presents the results of the development of a technology for manufacturing electro-optical Mach–Zehnder modulators based on InP. The key features of the technology are the use of one SiN_x double-patterned dielectric mask with two sequential inductively coupled plasma (ICP) etchings of the heterostructure for the simultaneous formation of active and passive sections of the modulator’s optical waveguides. This prevents misalignment errors at the borders. The planarization of the wafer surface was performed using photosensitive benzocyclobutene (BCB) films in a combined scheme. Windows in the BCB film to the bottom ohmic contact and at the die boundaries were formed by lithography, and then the excess thickness of the BCB film was removed by ICP etching until the p-InGaAs contact regions of the p-i-n heterostructure were exposed. The deposition and annealing of the top ohmic contact Ti/Pt/Au (50/25/400 nm) to p-InGaAs was carried out after the surface planarization, with the absence of both deformation and cracking of the planarizing film. A new approach to the division of the wafers into single dies is presented in this paper. The division was carried out in two stages: first, grooves were formed by dicing or deep wet etching, and then cleaving was performed along the formed grooves. The advantages of these techniques are that it allows the edges of the waveguides at the optical input/outputs to be formed and the antireflection coating to be deposited simultaneously on all dies on the wafer, before it is divided. Full article

The thermopile-based thermoelectric sensor has emerged as an important approach for microwave power measurement. It employs the Seebeck effect, which converts the microwave power into the heat and generates the thermovoltage. However, the output thermovoltage generally exhibits a frequency-dependent feature, which affects measurement accuracy. Besides, the low sensitivity of the current existed planar thermopile-based sensor constrains its further application. This is mainly caused by the heat loss of the substrate in the conversion process of microwave power-heat-electricity. In this paper, a novel embedded power sensor based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) process is presented. The thermopile is embedded in the benzocyclobutene (BCB) to prevent the heat loss, and the embedded structure also enables this sensor to eliminate the need for microelectromechanical system (MEMS) technology. The electromagnetic simulation by ANSYS high frequency structure simulator (HFSS) and thermal simulation by ANSYS Steady-State Thermal are combined to evaluate the sensor performance. The result shows that the output voltage increases with the input power linearly, and the proposed sensor is almost independent of the microwave frequency. A sensitivity of l.07 mV/mW has been achieved up to 200 GHz, with the port return loss lower than −15.8 dB. Full article

Covering a whole surface of a robot with tiny sensors which can measure local pressure and transmit the data through a network is an ideal solution to give an artificial skin to robots to improve a capability of action and safety. The crucial technological barrier is to package force sensor and communication function in a small volume. In this paper, we propose the novel device structure based on a wafer bonding technology to integrate and package capacitive force sensor using silicon diaphragm and an integrated circuit separately manufactured. Unique fabrication processes are developed, such as the feed-through forming using a dicing process, a planarization of the Benzocyclobutene (BCB) polymer filled in the feed-through and a wafer bonding to stack silicon diaphragm onto ASIC (application specific integrated circuit) wafer. The ASIC used in this paper has a capacitance measurement circuit and a digital communication interface mimicking a tactile receptor of a human. We successfully integrated the force sensor and the ASIC into a $2.5\times 2.5\times 0.3$ mm die and confirmed autonomously transmitted packets which contain digital sensing data with the linear force sensitivity of 57,640 Hz/N and 10 mN of data fluctuation. A small stray capacitance of 1.33 pF is achieved by use of 10 $\mathsf{\mu }$m thick BCB isolation layer and this minimum package structure. Full article

A radio-frequency micro-electro-mechanical system (RF MEMS) wafer-level packaging (WLP) method using pre-patterned benzo-cyclo-butene (BCB) polymers with a high-resistivity silicon cap is proposed to achieve high bonding quality and excellent RF performance. In this process, the BCB polymer was pre-defined to form the sealing ring and bonding layer by the spin-coating and patterning of photosensitive BCB before the cavity formation. During anisotropic wet etching of the silicon wafer to generate the housing cavity, the BCB sealing ring was protected by a sputtered Cr/Au (chromium/gold) layer. The average measured thickness of the BCB layer was 5.9 μm. In contrast to the conventional methods of spin-coating BCB after fabricating cavities, the pre-patterned BCB method presented BCB bonding layers with better quality on severe topography surfaces in terms of increased uniformity of thickness and better surface flatness. The observation of the bonded layer showed that no void or gap formed on the protruding coplanar waveguide (CPW) lines. A shear strength test was experimentally implemented as a function of the BCB widths in the range of 100–400 μm. The average shear strength of the packaged device was higher than 21.58 MPa. A RF MEMS switch was successfully packaged using this process with a negligible impact on the microwave characteristics and a significant improvement in the lifetime from below 10 million to over 1 billion. The measured insertion loss of the packaged RF MEMS switch was 0.779 dB and the insertion loss deterioration caused by the package structure was less than 0.2 dB at 30 GHz. Full article