Emerging Trends in Wide-Bandgap Semiconductor UV Photodetectors
A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".
Deadline for manuscript submissions: 31 December 2026 | Viewed by 5
Special Issue Editors
Interests: wide-bandgap semiconductors; information materials and devices; ultraviolet photodetector; gallium oxide
Interests: device physics; optoelectronics; wide-bandgap semiconductor; photodetector
Interests: wide-bandgap semiconductor materials and devices; gallium oxide and new optoelectronic devices; optoelectronic thin films and device physics
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
UV photodetectors, which convert invisible ultraviolet (UV) light into a detectable electrical signal, remain crucial in a range of applications, including missile plume detection, space astronomy, biomedical analysis, environmental monitoring, disinfection, and optical communications. Wide-bandgap (WBG) semiconductors, characterized by an energy bandgap typically greater than 3 eV, are ideally suited for these devices. Their inherent insensitivity to visible light eliminates the need for complex filtering systems, simplifying device design. Recent years have seen remarkable progress in UV photodetectors utilizing WBG semiconductors, including ZnO, SnO2, SiC, GaN, Ga2O3, AlGaN, AlN, and diamond. Extensive research in material optimization and structural engineering has been dedicated to enhancing the photodetection performance of these devices, aiming to satisfy the "5S" requirements: high sensitivity, high signal-to-noise ratio, fast speed, good spectral selectivity, and superior stability. Furthermore, advancements in defect modulation, heterojunction construction, and nanostructure fabrication have enabled UV photodetectors with novel functionalities, including flexibility, self-powered operation, and multimodal capabilities.
This Special Issue will highlight emerging trends in UV photodetectors based on wide-bandgap semiconductors, covering novel materials, innovative device structures, new photoelectric mechanisms, and specialized applications. We invite scholars in this field to contribute their latest research findings on WBG semiconductor UV photodetectors to this issue. Cutting-edge contributions, including original research papers, short communications, and comprehensive review articles, are welcome.
Keywords: wide-bandgap semiconductors, ultraviolet (UV) photodetector, optoelectronic devices, gallium oxide, heterojunction
Prof. Dr. Weihua Tang
Prof. Dr. Zeng Liu
Dr. Daoyou Guo
Dr. Shan Li
Guest Editors
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Keywords
- wide-bandgap semiconductors
- ultraviolet (UV) photodetector
- optoelectronic devices
- gallium oxide
- heterojunction
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