Sensors

Journal Browser

► Journal Browser

Advances in High-Speed CMOS Image Sensor and Related Technologies

Share This Special Issue

Special Issue Editor

Dr. Dima Maneuski

E-Mail Website
Guest Editor

SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, UK
Interests: CMOS image sensors; hybrid pixel detectors; particle tracking detectors; spectroscopic detectors; III-VI sensor materials; detector applications

Special Issue Information

Dear Colleagues,

CMOS imaging sensors for many decades bring innovation to scientific and engineering measurement tools. The advances in simulation, design and manufacture of the CMOS-integrated circuits paved the way to new scientific disciplines and greatly enhanced mature fields. One of the strands that made CMOS sensors flourish is high-speed imaging capabilities.

Advances in such disciplines as Light Detection and Ranging, Time of Flight Mass Spectrometry, pulsed neutron tomography, synchrotron and free electron laser sciences are enabled by high performance CMOS image sensors.

It is my pleasure to invite you to submit original contributions or review material to the special issue “Advances in high-speed CMOS image sensor and related technologies”. The aim of this issue is to summarise advances in the area of high-speed CMOS imaging sensors and associated disciplines. Potential topics include, but are not limited to:

Modelling and simulation of novel design structures for fast CMOS image sensors;
Semiconductor sensors for fast signal processing (SPADs, LGADs etc);
Advanced CMOS image sensor architectures for high-speed imaging;
Event driven image processing, on the fly data analysis and neural network assisted data sparsification;
Novel applications of high-speed CMOS image sensors

Dr. Dima Maneuski
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

High-speed CMOS image sensors
CMOS image sensors simulations
Image sensors materials
Advanced CMOS image sensors architectures
CMOS sensors data processing
Applications of high-speed CMOS image sensors

Published Papers (1 paper)

Research

16 pages, 6231 KiB

Open AccessArticle

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light

by Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon and Takeharu Goji Etoh

Sensors 2020, 20(23), 6895; https://doi.org/10.3390/s20236895 - 2 Dec 2020

Cited by 5 | Viewed by 4847

Abstract

The theoretical temporal resolution limit

t_{T}

The theoretical temporal resolution limit

t_{T}

of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material for the photodiode (Ge PD) for visible light since the absorption coefficient of Ge for the wavelength is several tens of times higher than that of Si, allowing a very thin PD. On the other hand, the saturation drift velocity of electrons in Ge is about 2/3 of that in Si. The ratio suggests an ultra-short propagation time of electrons in the Ge PD. However, the diffusion coefficient of electrons in Ge is four times higher than that of Si. Therefore, Monte Carlo simulations were applied to analyze the temporal resolution of the Ge PD. The estimated theoretical temporal resolution limit is 0.26 ps, while the practical limit is 1.41 ps. To achieve a super temporal resolution better than 11.1 ps, the driver circuit must operate at least 100 GHz. It is thus proposed to develop, at first, a short-wavelength infrared (SWIR) ultra-high-speed image sensor with a thicker and wider Ge PD, and then gradually decrease the size along with the progress of the driver circuits. Full article

(This article belongs to the Special Issue Advances in High-Speed CMOS Image Sensor and Related Technologies)

► Show Figures