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Advanced RF/Microwave Electronics for Upcoming Wireless Generations

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Electronic Sensors".

Deadline for manuscript submissions: 30 April 2024 | Viewed by 1653

Special Issue Editor


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Guest Editor
Department of Biomedical and Electronics Engineering, Faculty of Engineering and Informatics, University of Bradford, Bradford BD7 1DP, UK
Interests: antennas and propagation; microwave imaging; RF/microwave filters; linear and nonlinear circuits; MIMO/diversity antennas; 5G/6G antennas; RFID antennas; power amplifiers; phase shifters; power dividers
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Special Issue Information

Dear Colleagues,

Upcoming generations of RF electronics such as 6G, WiFi 7, and WiFi 8 are promising technologies that will lead the new electronics markets from 2025 onwards. They will dominate not only the RF and Microwave sectors, but also various related important technologies. MmWve technology and 6G promise speeds of more than 1 Gbps, more data bandwidth, and low latency due to built-in hardware and software capabilities that handle data very efficiently. Upcoming RF devices should include an innovative set of technologies that will radically change our private and professional lives through applications of novel services such as nanotechnology and terahertz wireless technology. Specifically, various antennas, power amplifiers, filters, phase shifters, and power divider configurations will be developed over the next few years utilizing different technologies, such as single high-directivity ultra-wideband, antenna arrays, multiple‐input multiple‐output systems, metamaterials, millimetre-wave, and reconfigurable intelligent surfaces (RISs). All of these wireless technologies will require advanced electronic systems.

This Special Issue invites academic and industrial scholars and researchers to contribute original research articles as well as review articles that seek to address the issues, trends, and challenges of the design and application of advanced RF/Microwave and mmWave electronic devices. This includes, but is not limited to, nanoelectronics, reconfigurable antennas, tunable filters and power amplifiers, multiplexers, power dividers, and phase shifters.

Dr. Yasir Al-Yasir
Guest Editor

Manuscript Submission Information

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Keywords

  • nanoelectronics
  • reconfigurable antennas
  • reconfigurable intelligent surface
  • tunable electronics
  • antennas and propagation
  • massive MIMO
  • 5G and 6G

Published Papers (2 papers)

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15 pages, 5737 KiB  
Article
A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique
by Soyeon Seo, Jinho Lee, Yongho Lee and Hyunchol Shin
Sensors 2024, 24(4), 1087; https://doi.org/10.3390/s24041087 - 07 Feb 2024
Viewed by 568
Abstract
A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stages 1 and 2 for 5.625° and 11.25° are [...] Read more.
A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stages 1 and 2 for 5.625° and 11.25° are designed in the form of a switched-line circuit, and stages 3, 4, and 5 for 22.5°, 45°, and 90° are designed in the form of a switched-filter circuit. The final stage 6 for 180° is designed in a single-to-differential balun followed by a single-pole double-throw (SPDT) switch for achieving an efficient phase inversion. A novel continuous tuning calibration technique is proposed to improve the phase accuracy. It controls the gate bias voltage of off-state HEMTs at the stage 6 SPDT switch for fine calibration of the output phase. Fabricated in a 0.15 μm GaN HEMT process using a die size of 1.75 mm2, the circuit produces 64 phase states at 28 GHz with a 5.625° step. The experimental results show that the Root-Mean-Square (RMS) phase error is significantly improved from 8.56° before calibration to 1.08° after calibration. It is also found that the calibration does not induce significant changes for other performances such as the insertion loss, RMS amplitude error, and input-referred P1dB. This work successfully demonstrates that the GaN technology can be applied to millimeter-wave high-power phased-array transceiver systems. Full article
(This article belongs to the Special Issue Advanced RF/Microwave Electronics for Upcoming Wireless Generations)
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11 pages, 3729 KiB  
Article
Generalized Concept and MATLAB Code for Modeling and Analyzing Wideband 90° Stub-Loaded Phase Shifters with Simulation and Experimental Verifications
by Falih M. Alnahwi, Yasir I. A. Al-Yasir, Chan Hwang See, Abdulkareem S. Abdullah and Raed A. Abd-Alhameed
Sensors 2023, 23(18), 7773; https://doi.org/10.3390/s23187773 - 09 Sep 2023
Cited by 1 | Viewed by 779
Abstract
In the design of phase shifters, the modeling equations are too complicated and require some approximations to be derived correctly by hand. In response to this problem, this paper presents a generalized concept, algorithm, and MATLAB code that provide the exact modeling equations [...] Read more.
In the design of phase shifters, the modeling equations are too complicated and require some approximations to be derived correctly by hand. In response to this problem, this paper presents a generalized concept, algorithm, and MATLAB code that provide the exact modeling equations of the transmission parameters and the scattering parameters of any 90° wideband stub-loaded phase shifter. The proposed code gives the modeling equations in term of variables for any number of stubs and characteristic impedance value by utilizing the symbol-based analysis of the MATLAB code. It also illustrates the results as a function of normalized frequency relative to the center frequency fo, and can be and can be tailored to any user-defined frequency range. As a matter of comparison, a three-stub wideband 90° stub-loaded phase shifter is simulated using CST Microwave Studio and experimentally fabricated on Rogers RT5880 dielectric substrate with dimensions of 30 × 40 × 0.8 mm3. The comparison reveals the accuracy of the proposed computerized modeling with −10 dB impedance bandwidth equal to 90% (0.55fo–1.45fo), (90°∓5°) phase difference bandwidth equal to 100% (0.5fo–1.5fo), and negligible insertion loss. The novelty of this work is that the proposed code provides the exact modeling equations of the stub-loaded phase shifter for any number of stubs regardless the complexity of the mathematical derivations. Full article
(This article belongs to the Special Issue Advanced RF/Microwave Electronics for Upcoming Wireless Generations)
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