Diffusion and Segregation Measurements in Semiconductor Nano-Structures and Devices
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: closed (30 August 2020) | Viewed by 6274
Special Issue Editor
Interests: investigations of materials; transmission electron microscopy (TEM); high-resolution electron microscopy (HREM); annular dark-field imaging (ADF) and Z-contrast in scanning TEM (STEM); electron energy-loss spectroscopy (EELS), including energy-loss near-edge structure (ELNES); energy-dispersive X-ray spectroscopy (EDXS)
Special Issue Information
Dear Colleagues,
Progress in semiconductor research and development of improved (opto)electronic devices rely on three foundations: New materials, novel design principles, and miniaturization according to what is commonly known as Moore’s Law. As devices shrink further, their properties will be more and more determined by individual atomic movements across interfaces, at surfaces, and near lattice defects. If a single atom ‘misbehaves’ by changing location, a nano-scale device may spontaneously fail.
The understanding of such atomic diffusion and segregation processes has been furthered by two converging developments: The resolution, sensitivity, and reliability of microscopic measurements have been extended right down to atomic dimensions by the development of new and the improvement of existing microscopic imaging and spectroscopy methods; at the same time, computers have become more powerful, so the behavior of larger agglomerates of many atoms can now be simulated. There is now sufficient overlap between experiments and theory on the nanometer scale to compare both on an equal footing, for which reproducible atomic-scale measurements are required.
This Special Issue of Nanomaterials aims at documenting recent advances in experimentally assessing the diffusion and segregation of atoms in semiconducting systems on the nanometer scale, with a focus on quantitative measurements by techniques with high lateral spatial resolution. This is important to measure and control atomic movements in individual nano-structures, along specific lattice directions, across well-defined interfaces, and to individual lattice defects, such as dislocations or special grain boundaries.
Dr. Thomas Walther
Guest Editor
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Keywords
- Phenomena: activation energy; annealing; diffusion mechanisms; doping; Gibssian interfacial excess; grain boundary segregation; interdiffusion; lattice defects; nitridation; oxidation; point defects; silicidation; surface segregation
- Material systems: semiconducting nanowires; quantum dots; quantum wells; transistor structures
- Methods: Auger electron spectroscopy; analytical electron microscopy; electron energy-loss spectroscopy; energy-dispersive X-ray spectroscopy; high-resolution electron microscopy; radioactive tracers; scanning probe microscopy; Z-contrast
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