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Nanomaterials
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Nanomaterials Processing for High Performance Thin-Film Transistors
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Nanomaterials Processing for High Performance Thin-Film Transistors

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (21 July 2023) | Viewed by 1910

Special Issue Editors

Dr. Hao Huang

E-Mail Website
Guest Editor
College of Resources, Environment and Materials, Guangxi University, Nanning, China
Interests: thin-film transistors; logic electronics
Dr. Chunlan Wang

E-Mail Website
Guest Editor
School of Science, Xi'an Polytechnic University, Xi'an, China
Interests: thin-film transistors; photocatalysts; gas sensors; nanofibers; nanosheets; dielectrics; MOFs

Special Issue Information

Dear Colleagues,

Emerging display devices including flexible displays, wearable devices, disposable electronics, e-books, etc., have led to higher performance requirements for the core component: thin-film transistors (TFT). The next-generation TFTs must meet the requirements of high performance, long-term stability, low power consumption, low cost, etc., and the current low-temperature polysilicon and amorphous silicon-based technologies are obviously facing challenges. The introduction of nanomaterials—such as amorphous semiconductors, organic semiconductors, hybrid films, carbon nanotubes, two-dimensional materials such transition metal chalcogenides and perovskites—into TFTs as channel materials may circumvent some of these limitations. In addition, innovations in device architecture, such as vertical architecture, may also benefit the evolution of TFTs.

We would like to invite you to contribute to this Special Issue, which aims to present the latest research breakthroughs in areas relevant to the development of nanomaterials processing for high performance thin-film transistors. Submitted manuscripts can include research articles, reviews, or perspective.

Dr. Hao Huang
Dr. Chunlan Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • amorphous semiconductor
  • organic semiconductor
  • hybrid films
  • carbon nanotubes
  • two-dimensional materials
  • perovskite
  • device architectures

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Published Papers (2 papers)

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Research

13 pages, 6009 KiB  
Article
The Effect of Rhenium Content on Microstructural Changes and Irradiated Hardening in W-Re Alloy under High-Dose Ion Irradiation
by Fengfeng Luo, Hongtai Luo, Qiuxiang Liu, Liang Zhou, Wenbin Lin, Ziyang Xie and Liping Guo
Nanomaterials 2023, 13(3), 497; https://doi.org/10.3390/nano13030497 - 26 Jan 2023
Cited by 3 | Viewed by 1880
Abstract
An amount of 100 dpa Si2+ irradiation was used to study the effect of transmutation rhenium content on irradiated microscopic defects and hardening in W-xRe (x = 0, 1, 3, 5 and 10 wt.%) alloys at 550 °C. The increase in Re [...] Read more.
An amount of 100 dpa Si2+ irradiation was used to study the effect of transmutation rhenium content on irradiated microscopic defects and hardening in W-xRe (x = 0, 1, 3, 5 and 10 wt.%) alloys at 550 °C. The increase in Re content could significantly refine the grain in the W-xRe alloys, and no obvious surface topography change could be found after high-dose irradiation via the scanning electron microscope (SEM). The micro defects induced by high-dose irradiation in W and W-3Re alloys were observed using a transmission electron microscope (TEM). Dislocation loops with a size larger than 10 nm could be found in both W and W-3Re alloy, but the distribution of them was different. The distribution of the dislocation loops was more uniform in pure W, while they seemed to be clustered around some locations in W-3Re alloy. Voids (~2.4 nm) were observed in W-3Re alloy, while no void was investigated in W. High-dose irradiation induced obvious hardening with the hardening rate between 75% and 155% in all W-xRe alloys, but W-3Re alloy had the lowest hardening rate (75%). The main reasons might be related to the smallest grain size in W-3Re alloy, which suppressed the formation of defect clusters and induced smaller hardening than that in other samples. Full article
(This article belongs to the Special Issue Nanomaterials Processing for High Performance Thin-Film Transistors)
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12 pages, 3484 KiB  
Article
One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
by Chunlan Wang, Yuqing Li, Yebo Jin, Gangying Guo, Yongle Song, Hao Huang, Han He and Aolin Wang
Nanomaterials 2022, 12(19), 3481; https://doi.org/10.3390/nano12193481 - 5 Oct 2022
Cited by 3 | Viewed by 2069
Abstract
Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle in the application of a-InGaZnO TFTs in the field [...] Read more.
Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle in the application of a-InGaZnO TFTs in the field of ultra-high resolution optoelectronic display. Here, we report that a-InGaZnO:O TFT prepared at room temperature has high transport performance, manipulating oxygen vacancy (VO) defects through an oxygen-doped a-InGaZnO framework. The main electrical properties of a-InGaZnO:O TFTs included high field-effect mobility (µFE) of 28 cm2/V s, a threshold voltage (Vth) of 0.9 V, a subthreshold swing (SS) of 0.9 V/dec, and a current switching ratio (Ion/Ioff) of 107; significant improvements over a-InGaZnO TFTs without oxygen plasma. A possible reason for this is that appropriate oxygen plasma treatment and room temperature preparation technology jointly play a role in improving the electrical performance of a-InGaZnO TFTs, which could not only increase carrier concentration, but also reduce the channel-layer surface defects and interface trap density of a-InGaZnO TFTs. These provides a powerful way to synergistically boost the transport performance of oxide TFTs fabricated at room temperature. Full article
(This article belongs to the Special Issue Nanomaterials Processing for High Performance Thin-Film Transistors)
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