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Application of Nanotechnology in Photovoltaic Systems

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "A2: Solar Energy and Photovoltaic Systems".

Deadline for manuscript submissions: closed (31 December 2022) | Viewed by 3831

Special Issue Editors


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Guest Editor
1. Instituto de Telecomunicações, 1049-001 Lisbon, Portugal
2. Academia Militar/CINAMIL, Av. Conde Castro Guimarães, 2720-113 Amadora, Portugal
Interests: photovoltaic systems; semiconductors; new materials; nanotechnology
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
Instituto de Telecomunicações, Instituto Superior Técnico da Universidade de Lisboa, Lisboa, Portugal
Interests: photovoltaic systems; semiconductors; new materials; nanotechnology
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The Photovoltaic Systems are facing new challenges and opportunities due to the development of new solar cells. Nowadays, heterojunction solar cell efficiency is higher than the homojunction solar cells. However, the fabrication price of homojunction solar cells is lower than heterojunction solar cells. Nanotechnology with new nanostructures is becoming increasingly sought out and their inclusion in homojunction solar cells can bring benefits, for example, shifting the maximum efficiency position from the visible wavelengths to the infrareds. In a hypothetical situation, a set of photovoltaic panels with homojunction solar cell technology and nanostructures are connected to a set of photovoltaic panels with homojunction solar cell technology without nanostructures. This system works both in the visible and the infrared wavelengths, i.e., the energy is produced during the day and the night: an important improvement in the photovoltaic systems that is very useful for the northern countries where the daylight period is shorter compared to the southern countries.  

This Special Issue invites original papers addressing the various topics relating nanotechnology materials and systems applied in Photovoltaic Systems. A wide variety of contributions is welcomed ranging from theoretical to simulation to experimental papers.

Keywords

  • Nanotechnology
  • Semiconductor materials
  • Solar cells
  • Photovoltaic systems
  • Integration photovoltaic systems

Published Papers (1 paper)

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Research

16 pages, 3812 KiB  
Article
Design and Modelling of Eco-Friendly CH3NH3SnI3-Based Perovskite Solar Cells with Suitable Transport Layers
by M. Mottakin, K. Sobayel, Dilip Sarkar, Hend Alkhammash, Sami Alharthi, Kuaanan Techato, Md. Shahiduzzaman, Nowshad Amin, Kamaruzzaman Sopian and Md. Akhtaruzzaman
Energies 2021, 14(21), 7200; https://doi.org/10.3390/en14217200 - 02 Nov 2021
Cited by 30 | Viewed by 3270
Abstract
An ideal n-i-p perovskite solar cell employing a Pb free CH3NH3SnI3 absorber layer was suggested and modelled. A comparative study for different electron transport materials has been performed for three devices keeping CuO hole transport material (HTL) constant. [...] Read more.
An ideal n-i-p perovskite solar cell employing a Pb free CH3NH3SnI3 absorber layer was suggested and modelled. A comparative study for different electron transport materials has been performed for three devices keeping CuO hole transport material (HTL) constant. SCAPS-1D numerical simulator is used to quantify the effects of amphoteric defect based on CH3NH3SnI3 absorber layer and the interface characteristics of both the electron transport layer (ETL) and hole transport layer (HTL). The study demonstrates that amphoteric defects in the absorber layer impact device performance significantly more than interface defects (IDL). The cell performed best at room temperature. Due to a reduction in Voc, PCE decreases with temperature. Defect tolerance limit for IL1 is 1013 cm−3, 1016 cm−3 and 1012 cm−3 for structures 1, 2 and 3 respectively. The defect tolerance limit for IL2 is 1014 cm−3. With the proposed device structure FTO/PCBM/CH3NH3SnI3/CuO shows the maximum efficiency of 25.45% (Voc = 0.97 V, Jsc = 35.19 mA/cm2, FF = 74.38%), for the structure FTO/TiO2/CH3NH3SnI3/CuO the best PCE is obtained 26.92% (Voc = 0.99 V, Jsc = 36.81 mA/cm2, FF = 73.80%) and device structure of FTO/WO3/CH3NH3SnI3/CuO gives the maximum efficiency 24.57% (Voc = 0.90 V, Jsc = 36.73 mA/cm2, FF = 74.93%) under optimum conditions. Compared to others, the FTO/TiO2/CH3NH3SnI3/CuO system provides better performance and better defect tolerance capacity. Full article
(This article belongs to the Special Issue Application of Nanotechnology in Photovoltaic Systems)
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