Novel Thin Film Solar Cell Devices
A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "A2: Solar Energy and Photovoltaic Systems".
Deadline for manuscript submissions: closed (31 January 2024) | Viewed by 232
Special Issue Editors
Interests: sulfur compound solar cells; Cu2ZnSnS4; Sb2Se3; Sb2(S,Se)3; carrier transport mechanism
Special Issue Information
Dear Colleagues,
Each significant increase in the efficiency of inorganic thin-film solar cells has been accompanied by breakthroughs in the understanding of the nature of material defects and more effective means of regulation. At present, chalcogenide compound solar cells are developing rapidly, but the desired high efficiencies have not yet been realized. In addition to studying the dynamic process of thin film growth, it is necessary to further investigate the physical mechanism of cell efficiency loss, especially the defect types, defect density and defect carrier capture cross section in the device and other dynamic carrier transport mechanisms. Because of the anisotropic one-dimensional crystal structure, inorganic compounds exhibit strange physical properties that are different from other isotropic semiconductors, which provides new opportunities for the discovery of new laws and the establishment of new theories. However, studies on the intrinsic structure, structural defects, doping atoms, interfaces, surfaces and other atomic scales of inorganic compounds are lacking, resulting in little research on the dynamic carrier transport process of defects.
This Special Issue is aimed at experimental physicists, electronic engineers, material scientists and chemists. It covers issues related to the recent progress in renewable energy, solar cells, optical and electrical properties of novel materials and devices. It is very useful and interesting to researchers to have access to state-of-the-art overviews of methods, results and applications in the field of science and technology of renewable energy and its related materials and devices.
Dr. Jiahua Tao
Prof. Dr. Shurong Wang
Guest Editors
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Keywords
- new material
- new device structure
- new transport mechanism
- defect passivation
- high efficiency
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