Molecular Beam Epitaxy of Metal Oxides Thin Films
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".
Deadline for manuscript submissions: 31 December 2024 | Viewed by 160
Special Issue Editor
Special Issue Information
Dear Colleagues,
Since its establishment approximately half a century ago, molecular beam epitaxy (MBE) has served as a powerful technique for the precise growth of thin films with atomic-level control, thus offering unique opportunities in the realm of materials science and engineering. This Special Issue aims to highlight the recent developments, challenges, and innovations, specifically regarding applications of MBE to metal oxide thin films.
Metal oxide thin films hold immense potential across various fields, including electronics, photonics, catalysis, energy storage, etc. The utilization of the MBE technique enables researchers to engineer thin films with tailored functionalities, interfaces, and structures, thereby discovering unique properties and applications. This issue will encompass a wide range of topics, including, but not limited to, the following:
- Growth mechanisms and kinetics of metal oxide thin films via MBE.
- Design of novel chemistries, enabling MBE synthesis of metal oxides.
- Structural, electronic, and optical characterization of MBE-grown metal oxide films.
- Metal oxide interface and heterostructures engineering for enhanced functionalities.
- Applications of MBE-grown metal oxide thin films in electronic devices, energy conversion/storage, sensors, catalysis, etc.
Dr. Jin Yue
Guest Editor
Manuscript Submission Information
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Keywords
- molecular beam epitaxy (MBE)
- metal oxide thin films
- growth mechanisms and kinetics
- in situ characterization
- oxide heterostructures
- strain engineering
- electronic devices
- optoelectronics
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