Electrically Active Defects: Studied by Junction Spectroscopy Techniques
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".
Deadline for manuscript submissions: 10 September 2025 | Viewed by 1286
Special Issue Editor
Interests: advanced systems; thin-films; electrical characterization; defect engineering; DLTS
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
The presence of electrically active defects (EADs) in the crystal lattice significantly changes the electrical properties of semiconductor materials. EADs introduce energy levels into the bandgap of a semiconductor, which act as traps for majority and minority charge carriers. Typical examples of EADs are chemical impurities, missing atoms in the lattice structure (vacancies), or a combination of the two. EADs are mainly created during (i) semiconductor material growth, (ii) processing by ion implantation, or (iii) operation in a harsh ionizing radiation environment. They can directly influence the characteristics and reliability of semiconductor devices.
Junction spectroscopy techniques are commonly used for studying EADs. This is a term used to describe different measurements performed on a semiconductor junction using electrical or electro-optical techniques. Deep-level transient spectroscopy (DLTS) is a well-established technique, and it is the most sensitive method used for the measurement of the electronic properties of EADs in semiconductors. It provides information regarding activation energy for electron and hole emissions, captures the cross-section, and concentrates on defects. However, the main problem associated with DLTS is the lack of energy resolution. An improvement arose in another junction spectroscopy technique called Laplace DLTS (L-DLTS), which brought about an order-of-magnitude-better energy resolution (meV). Moreover, minority carrier transient spectroscopy (MCTS) offers unique opportunities for studying the minority carrier traps in semiconductors, which are beyond the reach of DLTS or L-DLTS. In addition to MCTS, a technique called optical-DLTS is also used.
This Special Issue of Crystals, entitled “Electrically Active Defects: Studied by Junction Spectroscopy Techniques”, is dedicated to all aspects related to EADs and their characterization. The main aim of this Special Issue is to provide an extensive overview of the current state of the art and future perspectives in this field.
Researchers working in the fields of EADs or junction spectroscopy techniques are invited to contribute. Potential topics of interest include, but are not limited to, the following:
- Electrically active defects;
- Semiconductors (Si, Ge, and other);
- Wide-band gap semiconductors (SiC, GaN, Ga2O3, and other);
- Junction spectroscopy techniques (DLTS, L-DLTS, MCTS, O-DLTS, and others).
Dr. Ivana Capan
Guest Editor
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Keywords
- defects
- deep levels
- transient spectroscopy
- semiconductors
- Si, Ge, SiC, GaN, Ga2O3
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