Gallium Oxide Crystals and Epi-Layers: Growth & Applications

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (30 November 2020) | Viewed by 295

Special Issue Editors


E-Mail Website
Guest Editor
Ioffe Institute, Saint-Petersburg, Russia
Interests: bulk crystal growth and epitaxy, gallium oxide, gallium nitride and relative materials; physical and mechanical properties

E-Mail
Guest Editor
Ioffe Institute, Saint Petersburg, Russia
Interests: gallium oxide, gallium nitride, wide bandgap semiconductors, epitaxy, crystal growth, semiconductor devices

Special Issue Information

Dear Colleagues,

Gallium Oxide is a new emerging wide-band gap semiconductor with capabilities beyond conventional semiconductor materials. Owing to its unique properties Ga2O3 has good perspectives in power electronics, solar blind UV detectors, sensors, and a variety of other applications. One of the advantages of gallium oxide is that bulk crystals of monoclinic β-Ga2O3 polymorph can be grown using common melt growth techniques such as edge-defined film fed growth, Czochralski, Bridgman, Verneuil and float-zone. Melt growth techniques allow to produce bulk crystals and large area substrates of β-Ga2O3 at low cost. Technological advances in growing large diameter bulk crystals are possibly the main driving force behind gallium oxide research and development.

However, as compared with other well established oxides, the growth of Ga2O3 bulk crystals presents many technical challenges related to the high chemical reactivity and instability of Ga2O3 melt at elevated temperatures. Although significant progress has been made in the growth of Ga2O3 bulk crystals, many important questions still remain to be answered.

This Special Issue aims at disseminating the latest advances in the growth of gallium oxide bulk crystals. The potential topics of interest include but are not limited to:

  • experimental and theoretical aspects of Ga2O3 crystal growth;
  • defect structure and doping;
  • material and physical properties of bulk Ga2O3 crystals;
  • substrate fabrication technology.

Dr. Vladimir Ivanovich Nikolaev
Dr. Sergey I. Stepanov
Guest Editors

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