Properties and Defects of Silicon Carbide
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".
Deadline for manuscript submissions: 20 July 2025 | Viewed by 72
Special Issue Editors
Interests: silicon carbide; electrical properties; coefficient of thermal expansion; micropipies; dislocatios; stacking faults; growth pits; triangular defect; carrot defect; point defect; bulk defect
Interests: transmission electron microscopy (S)TEM methods; semiconductors (SiC, III-N, others); OAD films (oxides, metals); ceramics thermo-chemical treatments
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Special Issue Information
Dear Colleagues,
Silicon carbide (SiC) is an attractive material for semiconductor devices operating under extreme conditions because it exhibits extraordinary physical properties such as a high electrical breakdown field, high thermal conductivity, and high electron saturation velocity. For these reasons, many types of SiC-based micro-electronic devices such as white light-emitting diodes (WLEDs), metal-semiconductor field effect transistors (MESFETs), P-i-N diodes, Schottky diodes, metal-oxide-semiconductor field effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs), and thyristors have been widely fabricated and used. The thermal properties of SiC are critical in determining the operating limits and boundaries for safe device operation. The resistivity of the SiC substrate is vital for power devices and radio frequency devices. However, a large number of crystal defects still exist in SiC crystals, which influence the properties of the SiC devices. In summary, the study of the properties and defects of silicon carbide, as well as the influence of defects on the electrical characteristics of the device, is crucial.
Dr. Yingxin Cui
Prof. Dr. Francisco M. Morales
Guest Editors
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Keywords
- silicon carbide
- electrical properties
- doping
- thermal conductivity
- coefficient of thermal expansion
- defects
- SiC device
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