Wide Bandgap Materials and Devices
A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Electrical, Electronics and Communications Engineering".
Deadline for manuscript submissions: closed (20 October 2022) | Viewed by 199
Special Issue Editors
Interests: complex oxide materials; low power electronic and energy devices; memristors; spintronics
Special Issue Information
Dear Colleagues,
Technologies on wide bandgap semiconductor materials and devices continue to make excellent progress, and the intense activities have already led to many practical applications. Materials beyond silicon carbide and gallium nitride, such as gallium oxide, diamond, cubic boron nitride, aluminum nitride, and others, are at the frontier of wide bandgap semiconductor materials research and device physics. While such materials hold great promise for applications such as ultraviolet optoelectronic emitters and detectors, more compact and efficient energy converters, higher power high-frequency amplifiers, and quantum information science, many materials and processing challenges must still be addressed before wide bandgap semiconductors mature and can have significant impact. This special topic aims to provide the state-of-the-art wide bandgap material and device technologies.
This Special Issue will publish high-quality, original research papers, in the overlapping fields of:
- Bulk crystals, substrates, and epitaxial growth
- Theory and first-principles calculations
- Defect science, including doping
- Novel polarization effects and utilization in devices
- Wide bandgap semiconductor heterostructures and low-dimensional structures
- Device performance and reliability
- Carrier recombination dynamics
- Gate and passivation dielectrics
- Thermal properties and thermal engineering
- Advanced materials characterization techniques
- Color centers for quantum technologies
- Ultraviolet emitters and detectors
Prof. Dr. Weiwei Li
Dr. Chao Yun
Guest Editors
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