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Journal: Eng. Proc., 2026
Volume: 127
Number: 2
Article:
Life Cycle Assessment of Epitaxy of GaN-on-SiC High-Electron-Mobility Transistors for Advanced Radio Frequency Applications
Authors:
by
Max Mosig, Stefan Müller and Rüdiger Quay
Link:
https://www.mdpi.com/2673-4591/127/1/2
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