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Electronic Materials
Volume 6
Issue 2
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Electron. Mater., Volume 6, Issue 2 (June 2025) – 3 articles

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31 pages, 2914 KiB  
Review
Screen Printing for Energy Storage and Functional Electronics: A Review
by Juan C. Rubio and Martin Bolduc
Electron. Mater. 2025, 6(2), 7; https://doi.org/10.3390/electronicmat6020007 - 30 May 2025
Viewed by 36
Abstract
Printed electronics employ established printing methods to create low-cost, mechanically flexible devices including batteries, supercapacitors, sensors, antennas and RFID tags on plastic, paper and textile substrates. This review focuses on the specific contribution of screen printing to that landscape, examining how ink viscosity, [...] Read more.
Printed electronics employ established printing methods to create low-cost, mechanically flexible devices including batteries, supercapacitors, sensors, antennas and RFID tags on plastic, paper and textile substrates. This review focuses on the specific contribution of screen printing to that landscape, examining how ink viscosity, mesh selection and squeegee dynamics govern film uniformity, pattern resolution and ultimately device performance. Recent progress in advanced ink systems is surveyed, highlighting carbon allotropes (graphene, carbon nano-onions, carbon nanotubes, graphite), silver and copper nanostructures, MXene and functional oxides that collectively enhance mechanical robustness, electrical conductivity and radio-frequency behavior. Parallel improvements in substrate engineering such as polyimide, PET, TPU, cellulose and elastomers demonstrate the technique’s capacity to accommodate complex geometries for wearable, medical and industrial applications while supporting environmentally responsible material choices such as water-borne binders and bio-based solvents. By mapping two decades of developments across energy-storage layers and functional electronics, the article identifies the key process elements, recurring challenges and emerging sustainable practices that will guide future optimization of screen-printing materials and protocols for high-performance, customizable and eco-friendly flexible devices. Full article
14 pages, 3406 KiB  
Article
Implication of Surface Passivation on the In-Plane Charge Transport in the Oriented Thin Films of P3HT
by Nisarg Hirens Purabiarao, Kumar Vivek Gaurav, Shubham Sharma, Yoshito Ando and Shyam Sudhir Pandey
Electron. Mater. 2025, 6(2), 6; https://doi.org/10.3390/electronicmat6020006 - 7 May 2025
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Abstract
Optimizing charge transport in organic semiconductors is crucial for advancing next-generation optoelectronic devices. The performance of organic field-effect transistors (OFETs) is significantly influenced by the alignment of films in the channel direction and the quality of the dielectric surface, which should be uniform, [...] Read more.
Optimizing charge transport in organic semiconductors is crucial for advancing next-generation optoelectronic devices. The performance of organic field-effect transistors (OFETs) is significantly influenced by the alignment of films in the channel direction and the quality of the dielectric surface, which should be uniform, smooth, and free of charge-trapping defects. Our study reports the enhancement of OFET performance using large-area, uniform, and oriented thin films of regioregular poly[3-hexylthiophene] (RR-P3HT), prepared via the Floating Film Transfer Method (FTM) on octadecyltrichlorosilane (OTS) passivated SiO2 surfaces. SiO2 surfaces inherently possess dangling bonds that act as charge traps, but these can be effectively passivated through optimized surface treatments. OTS treatment has improved the optical anisotropy of thin films and the surface wettability of SiO2. Notably, using octadecene as a solvent during OTS passivation, as opposed to toluene, resulted in a significant enhancement of charge carrier transport. Specifically, passivation with OTS-F (10 mM OTS in octadecene at 100 °C for 48 h) led to a >150 times increase in mobility and a reduction in threshold voltage compared to OTS-A (5 mM OTS in toluene for 12 h at room temperature). Under optimal conditions, these FTM-processed RR-P3HT films achieved the best device performance, with a saturated mobility (μsat) of 0.18 cm2V−1s−1. Full article
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10 pages, 2125 KiB  
Article
Modeling of Magnetoconductivity (MC) Behavior in Dilute p-Si/SiGe/Si
by Hamza Mabchour, Yassine Essakali, Mounir El Hassan, Samir Elouaham, Boujemaa Nassiri, Said Dlimi and Abdelhamid El Kaaouachi
Electron. Mater. 2025, 6(2), 5; https://doi.org/10.3390/electronicmat6020005 - 29 Apr 2025
Viewed by 287
Abstract
In this study, we investigate the magnetoconductivity behavior in a 2D p-Si/SiGe/Si system. To achieve this, we develop a theoretical model that incorporates three key contributions, the weak localization effect, electron–electron interaction effects, and the Zeeman effect, which is considered only in the [...] Read more.
In this study, we investigate the magnetoconductivity behavior in a 2D p-Si/SiGe/Si system. To achieve this, we develop a theoretical model that incorporates three key contributions, the weak localization effect, electron–electron interaction effects, and the Zeeman effect, which is considered only in the presence of a magnetic field. We then compare our theoretical predictions with experimental magnetoconductivity data, analyzing both the consistencies and discrepancies between the model and the measurements. Through this comparison, we aim to provide a deeper physical understanding of the factors influencing magnetoconductivity in this system. Full article
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