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Electronic Materials, Volume 6, Issue 2

2025 June - 4 articles

Cover Story: Flexible and wearable electronics based on organic materials are vital for future technologies but are often limited by inefficient charge transport. Researchers at the Kyushu Institute of Technology addressed this by studying how surface passivation affects charge transport in oriented RR-P3HT thin films. Using the Floating Film Transfer Method (FTM), RR-P3HT films were deposited on SiO2 substrates modified with OTS-based SAMs. The optimized OTS layer, treated with octadecene at high temperatures (OTS-F), reduced interface traps, enhanced film orientation, and promoted edge-on stacking. Notably, charge carrier mobility reached 0.18 cm2/V−1s−1. Optical, structural, and electrical characterizations confirmed that interfacial engineering, crystallinity, and molecular alignment are key to improving OFET performance. View this paper
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Articles (4)

  • Article
  • Open Access
1 Citations
3,798 Views
9 Pages

Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering

  • Christina Veneti,
  • Lykourgos Magafas and
  • Panagiota Papadopoulou

In the present work a-SiC:H thin films were prepared using magnetron sputtering technique for different substrate temperatures from 100 °C to 290 °C. Their optical properties were studied using the ellipsometry technique. The experimental res...

  • Review
  • Open Access
8 Citations
5,444 Views
29 Pages

Printed electronics employ established printing methods to create low-cost, mechanically flexible devices including batteries, supercapacitors, sensors, antennas and RFID tags on plastic, paper and textile substrates. This review focuses on the speci...

  • Article
  • Open Access
1 Citations
2,172 Views
14 Pages

Implication of Surface Passivation on the In-Plane Charge Transport in the Oriented Thin Films of P3HT

  • Nisarg Hirens Purabiarao,
  • Kumar Vivek Gaurav,
  • Shubham Sharma,
  • Yoshito Ando and
  • Shyam Sudhir Pandey

Optimizing charge transport in organic semiconductors is crucial for advancing next-generation optoelectronic devices. The performance of organic field-effect transistors (OFETs) is significantly influenced by the alignment of films in the channel di...

  • Article
  • Open Access
1 Citations
1,713 Views
10 Pages

Modeling of Magnetoconductivity (MC) Behavior in Dilute p-Si/SiGe/Si

  • Hamza Mabchour,
  • Yassine Essakali,
  • Mounir El Hassan,
  • Samir Elouaham,
  • Boujemaa Nassiri,
  • Said Dlimi and
  • Abdelhamid El Kaaouachi

In this study, we investigate the magnetoconductivity behavior in a 2D p-Si/SiGe/Si system. To achieve this, we develop a theoretical model that incorporates three key contributions, the weak localization effect, electron–electron interaction e...

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Electron. Mater. - ISSN 2673-3978