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Electronic Materials, Volume 6, Issue 1

March 2025 - 4 articles

Cover Story: SnO2 and ZnO thin films are used in many electronic devices, including gas sensors, light-emitting diodes, and solar cells. Accurate determination of the band gap energy is essential, but different approximations exist depending on the crystalline quality and doping level. With the aim of analyzing the various approaches, SnO2 and ZnO films were sputtered at room temperature and subsequently annealed in N2 between 250 °C and 450 °C, resulting in different crystallite sizes, absorption coefficients, and free carrier concentrations. The performed analysis shows that the expression for amorphous materials underestimates the band gap, and the so-called unified method tends to overestimate it, while the equations for perfect or heavily doped crystals give values that are more consistent with the doping level, regardless of the crystalline quality. View this paper
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Articles (4)

  • Article
  • Open Access
1,609 Views
13 Pages

Research on the Withstand Voltage Properties of Cr/Mn-Doped Al2O3 Ceramics in Vacuum

  • Dandan Feng,
  • Xiaojing Wang,
  • Xueying Han,
  • Zhiqiang Yu,
  • Jialun Feng and
  • Hefei Wang

Al2O3 ceramics are widely used in vacuum electronic devices. However, surface flashover in a vacuum during the application of high voltage significantly influences their reliability and restricts the development of vacuum electronic devices. The seco...

  • Article
  • Open Access
11 Citations
4,550 Views
15 Pages

This research is on the structural, optical, and electrical properties of SnO2 and ZnO thin films, which are increasingly used in many electronic devices, including gas sensors, light-emitting diodes, and solar cells. For the various applications, it...

  • Article
  • Open Access
2 Citations
3,648 Views
8 Pages

Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density

  • Jiaxin Liu,
  • Shan Huang,
  • Zhenyuan Xiao,
  • Ning Li,
  • Jaekyun Kim,
  • Jidong Jin and
  • Jiawei Zhang

Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density...

  • Article
  • Open Access
2,864 Views
18 Pages

Tribological, Thermal, Kinetic, and Surface Microtextural Characterization of Prime p-Type <100> Silicon Wafer CMP for Direct Wafer Bonding Applications

  • Michelle Yap,
  • Catherine Yap,
  • Yasa Sampurno,
  • Glenn Whitener,
  • Jason Keleher,
  • Len Borucki and
  • Ara Philipossian

We investigated the tribological, thermal, kinetic, and surface microtextural characteristics of chemical mechanical polishing (CMP) of 300 mm p-type <100> prime silicon wafers (and their native oxide) at various pressures, sliding velocities,...

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Electron. Mater. - ISSN 2673-3978