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Proceeding Paper

On-Chip Thermal Insulation Using Porous GaN †

1
Engineering Department, University of Cambridge, Cambridge CB3 0FA, UK
2
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK
*
Author to whom correspondence should be addressed.
Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018.
Proceedings 2018, 2(13), 776; https://doi.org/10.3390/proceedings2130776
Published: 10 December 2018
(This article belongs to the Proceedings of EUROSENSORS 2018)
This study focuses on the thermal characterization of porous gallium nitride (GaN) using
an extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chip
thermal insulation, a fundamental requirement for low-power, high-speed and high-accuracy
thermal sensors. Thermal insulation is especially important in GaN devices, due to the intrinsically
high thermal conductivity of the material. The results show one order of magnitude reduction in
thermal conductivity, from 130 W/mK to 10 W/mK, in line with theoretical predictions for porous
materials. This achievement is encouraging in the quest for integrating sensors with opto-, powerand
RF-electronics on a single GaN chip. View Full-Text
Keywords: GaN; gallium nitride; porous; thermal conductivity; thermal insulation; 3-omega GaN; gallium nitride; porous; thermal conductivity; thermal insulation; 3-omega
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MDPI and ACS Style

Spiridon, B.F.; Griffin, P.H.; Jarman, J.C.; Liu, Y.; Zhu, T.; Luca, A.D.; Oliver, R.A.; Udrea, F. On-Chip Thermal Insulation Using Porous GaN. Proceedings 2018, 2, 776. https://doi.org/10.3390/proceedings2130776

AMA Style

Spiridon BF, Griffin PH, Jarman JC, Liu Y, Zhu T, Luca AD, Oliver RA, Udrea F. On-Chip Thermal Insulation Using Porous GaN. Proceedings. 2018; 2(13):776. https://doi.org/10.3390/proceedings2130776

Chicago/Turabian Style

Spiridon, Bogdan F., Peter H. Griffin, John C. Jarman, Yingjun Liu, Tongtong Zhu, Andrea De Luca, Rachel A. Oliver, and Florin Udrea. 2018. "On-Chip Thermal Insulation Using Porous GaN" Proceedings 2, no. 13: 776. https://doi.org/10.3390/proceedings2130776

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