On-Chip Thermal Insulation Using Porous GaN†
an extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chip
thermal insulation, a fundamental requirement for low-power, high-speed and high-accuracy
thermal sensors. Thermal insulation is especially important in GaN devices, due to the intrinsically
high thermal conductivity of the material. The results show one order of magnitude reduction in
thermal conductivity, from 130 W/mK to 10 W/mK, in line with theoretical predictions for porous
materials. This achievement is encouraging in the quest for integrating sensors with opto-, powerand
RF-electronics on a single GaN chip.
Spiridon, B.F.; Griffin, P.H.; Jarman, J.C.; Liu, Y.; Zhu, T.; Luca, A.D.; Oliver, R.A.; Udrea, F. On-Chip Thermal Insulation Using Porous GaN. Proceedings 2018, 2, 776.
Spiridon BF, Griffin PH, Jarman JC, Liu Y, Zhu T, Luca AD, Oliver RA, Udrea F. On-Chip Thermal Insulation Using Porous GaN. Proceedings. 2018; 2(13):776.Chicago/Turabian Style
Spiridon, Bogdan F.; Griffin, Peter H.; Jarman, John C.; Liu, Yingjun; Zhu, Tongtong; Luca, Andrea De; Oliver, Rachel A.; Udrea, Florin. 2018. "On-Chip Thermal Insulation Using Porous GaN" Proceedings 2, no. 13: 776.