Kim, D.-K.; Park, J.; Zhang, X.; Park, J.; Bae, J.-H.
Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors. Electronics 2020, 9, 1652.
https://doi.org/10.3390/electronics9101652
AMA Style
Kim D-K, Park J, Zhang X, Park J, Bae J-H.
Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors. Electronics. 2020; 9(10):1652.
https://doi.org/10.3390/electronics9101652
Chicago/Turabian Style
Kim, Do-Kyung, Jihwan Park, Xue Zhang, Jaehoon Park, and Jin-Hyuk Bae.
2020. "Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors" Electronics 9, no. 10: 1652.
https://doi.org/10.3390/electronics9101652
APA Style
Kim, D.-K., Park, J., Zhang, X., Park, J., & Bae, J.-H.
(2020). Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors. Electronics, 9(10), 1652.
https://doi.org/10.3390/electronics9101652