Lee, H.; Ha, S.; Bae, J.-H.; Kang, I.-M.; Kim, K.; Lee, W.-Y.; Jang, J.
Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route. Electronics 2019, 8, 955.
https://doi.org/10.3390/electronics8090955
AMA Style
Lee H, Ha S, Bae J-H, Kang I-M, Kim K, Lee W-Y, Jang J.
Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route. Electronics. 2019; 8(9):955.
https://doi.org/10.3390/electronics8090955
Chicago/Turabian Style
Lee, Hyunjae, Seunghyun Ha, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, and Jaewon Jang.
2019. "Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route" Electronics 8, no. 9: 955.
https://doi.org/10.3390/electronics8090955
APA Style
Lee, H., Ha, S., Bae, J.-H., Kang, I.-M., Kim, K., Lee, W.-Y., & Jang, J.
(2019). Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route. Electronics, 8(9), 955.
https://doi.org/10.3390/electronics8090955