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Electronics2019, 8(6), 611;https://doi.org/10.3390/electronics8060611

Journal: ElectronicsVolume: 8Number: 611

Article: Channel Length Biasing for Improving Read Margin of the 8T SRAM at Near Threshold Operation

Authors:
Ik Joon Chang¹,
Yesung Kang² and
Youngmin Kim^3,*

Link: https://www.mdpi.com/2079-9292/8/6/611

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