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Open AccessArticle

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

1
School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
2
School of Electronics Information and Electrics Engineering, Xiangnan University, Chenzhou 422300, China
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(8), 849; https://doi.org/10.3390/electronics8080849
Received: 12 July 2019 / Revised: 29 July 2019 / Accepted: 29 July 2019 / Published: 31 July 2019
(This article belongs to the Special Issue Low-Voltage Integrated Circuits Design and Application)
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Abstract

The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects. View Full-Text
Keywords: MLGNR interconnects; crosstalk delay; noise output; transfer gain; ultra-low-k dielectric materials MLGNR interconnects; crosstalk delay; noise output; transfer gain; ultra-low-k dielectric materials
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Xu, P.; Pan, Z.; Tang, Z. The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects. Electronics 2019, 8, 849.

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