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Open AccessFeature PaperArticle

Hall-Effect Current Sensors Susceptibility to EMI: Experimental Study

Department of Electronics and Telecommunications (DET), Politecnico di Torino, Corso Duca degli Abruzzi 24, I-10129 Torino, Italy
Electronics 2019, 8(11), 1310; https://doi.org/10.3390/electronics8111310
Received: 27 September 2019 / Revised: 26 October 2019 / Accepted: 3 November 2019 / Published: 8 November 2019
(This article belongs to the Special Issue Electromagnetic Interference and Compatibility)
The paper deals with the susceptibility to Electromagnetic Interference (EMI) of Hall-effect current sensors. They are usually employed in power systems because of their galvanic isolation. The EMI robustness of such contactless device was compared with that of resistive current sensing (wired method). To this purpose, a printed circuit board (PCB) was fabricated. EMI tests methods such as Bulk Current Injection (BCI), Transverse-Electromagnetic (TEM) cell and Direct Power injection (DPI) were performed to evaluate the robustness of the Hall-Effect current sensor. EMI-induced failures are highlighted by comparing the different measurements tests and setups. View Full-Text
Keywords: hall-effect current sensors; commercial current sensor; electromagnetic compatibility (EMC); electromagnetic interference (EMI); direct power injection (DPI) test; transverse-electromagnetic (TEM) test; bulk current injection (BCI) test hall-effect current sensors; commercial current sensor; electromagnetic compatibility (EMC); electromagnetic interference (EMI); direct power injection (DPI) test; transverse-electromagnetic (TEM) test; bulk current injection (BCI) test
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Aiello, O. Hall-Effect Current Sensors Susceptibility to EMI: Experimental Study. Electronics 2019, 8, 1310.

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