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Open AccessFeature PaperArticle

CMOS Voltage Reference using a Self-Cascode Composite Transistor and a Schottky Diode

Systems Engineering and Information Technology Institute, Federal University of Itajuba, 35903-087 Itajuba, Brazil
Electrical Engineering Department, Federal University of Minas Gerais, 31270-901 Belo Horizonte, Brazil
Electrical & Computer Engineering Department, Dalhousie University, Halifax, NS B3J 1Z1, Canada
Authors to whom correspondence should be addressed.
Electronics 2019, 8(11), 1271;
Received: 29 September 2019 / Revised: 28 October 2019 / Accepted: 30 October 2019 / Published: 1 November 2019
(This article belongs to the Special Issue Nanoscale CMOS Technologies)
This work presents an investigation of the temperature behavior of self-cascode composite transistors (SCCTs). Results supported by silicon measurements show that SCCTs can be used to generate a proportional to absolute temperature voltage or even a temperature-compensated voltage. Based on the achieved results, a new circuit topology of a resistorless voltage reference circuit using a Schottky diode is also presented. The circuit was fabricated in a 130 nm BiCMOS process and occupied a silicon area of 67.98 µm × 161.7 µm. The averaged value of the output voltage is 720.4 mV, and its averaged line regulation performance is 2.3 mV/V, calculated through 26 characterized chip samples. The averaged temperature coefficient (TC) obtained through five chip samples is 56 ppm/°C in a temperature range from −40 to 85 °C. A trimming circuit is also included in the circuit topology to mitigate the impact of the fabrication process effects on its TC. The circuit operates with a supply voltage range from 1.1 to 2.5 V. View Full-Text
Keywords: voltage reference; Schottky diode; self-cascode composite transistor; resistorless voltage reference; Schottky diode; self-cascode composite transistor; resistorless
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Brito, T.M.; Colombo, D.M.; Moreno, R.L.; El-Sankary, K. CMOS Voltage Reference using a Self-Cascode Composite Transistor and a Schottky Diode. Electronics 2019, 8, 1271.

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