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Journal: Electronics, 2018
Volume: 7
Number: 416

Article: AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer
Authors: by Kuiwei Geng, Ditao Chen, Quanbin Zhou and Hong Wang
Link: https://www.mdpi.com/2079-9292/7/12/416

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