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Electronics2018, 7(12), 416;https://doi.org/10.3390/electronics7120416

Journal: ElectronicsVolume: 7Number: 416

Article: AlGaN/GaN MIS-HEMT with PECVD SiN_x, SiON, SiO₂ as Gate Dielectric and Passivation Layer

Authors:
Kuiwei Geng¹,
Ditao Chen¹ and
Quanbin Zhou¹
et al.

Link: https://www.mdpi.com/2079-9292/7/12/416

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