Geng, K.; Chen, D.; Zhou, Q.; Wang, H.
AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer. Electronics 2018, 7, 416.
https://doi.org/10.3390/electronics7120416
AMA Style
Geng K, Chen D, Zhou Q, Wang H.
AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer. Electronics. 2018; 7(12):416.
https://doi.org/10.3390/electronics7120416
Chicago/Turabian Style
Geng, Kuiwei, Ditao Chen, Quanbin Zhou, and Hong Wang.
2018. "AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer" Electronics 7, no. 12: 416.
https://doi.org/10.3390/electronics7120416
APA Style
Geng, K., Chen, D., Zhou, Q., & Wang, H.
(2018). AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer. Electronics, 7(12), 416.
https://doi.org/10.3390/electronics7120416