Zhou, X.; Sun, P.; Li, K.; Liu, Q.; Chen, L.; Wang, B.
A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing. Electronics 2025, 14, 771.
https://doi.org/10.3390/electronics14040771
AMA Style
Zhou X, Sun P, Li K, Liu Q, Chen L, Wang B.
A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing. Electronics. 2025; 14(4):771.
https://doi.org/10.3390/electronics14040771
Chicago/Turabian Style
Zhou, Xinghao, Pengju Sun, Kaiwei Li, Qingsong Liu, Lan Chen, and Bo Wang.
2025. "A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing" Electronics 14, no. 4: 771.
https://doi.org/10.3390/electronics14040771
APA Style
Zhou, X., Sun, P., Li, K., Liu, Q., Chen, L., & Wang, B.
(2025). A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing. Electronics, 14(4), 771.
https://doi.org/10.3390/electronics14040771
