Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process
Abstract
:1. Introduction
2. Device Structure and Fabrication
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Ji, Y.; Huang, S.; Jiang, Q.; Zhang, R.; Fan, J.; Yin, H.; Zheng, Y.; Wang, X.; Wei, K.; Liu, X. Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process. Electronics 2023, 12, 1767. https://doi.org/10.3390/electronics12081767
Ji Y, Huang S, Jiang Q, Zhang R, Fan J, Yin H, Zheng Y, Wang X, Wei K, Liu X. Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process. Electronics. 2023; 12(8):1767. https://doi.org/10.3390/electronics12081767
Chicago/Turabian StyleJi, Yuan, Sen Huang, Qimeng Jiang, Ruizhe Zhang, Jie Fan, Haibo Yin, Yingkui Zheng, Xinhua Wang, Ke Wei, and Xinyu Liu. 2023. "Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process" Electronics 12, no. 8: 1767. https://doi.org/10.3390/electronics12081767
APA StyleJi, Y., Huang, S., Jiang, Q., Zhang, R., Fan, J., Yin, H., Zheng, Y., Wang, X., Wei, K., & Liu, X. (2023). Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process. Electronics, 12(8), 1767. https://doi.org/10.3390/electronics12081767