Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs

Bonaldo, Stefano; Mattiazzo, Serena; Bagatin, Marta; Paccagnella, Alessandro; Margutti, Giovanni; Gerardin, Simone

doi:10.3390/electronics12030543

Open AccessArticle

Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs

by

Stefano Bonaldo

^1,*

,

Serena Mattiazzo

²,

Marta Bagatin

¹,

Alessandro Paccagnella

¹,

Giovanni Margutti

³ and

Simone Gerardin

¹

Department of Information Engineering, University of Padova, 35131 Padova, Italy

²

Department of Physics and Astronomy, University of Padova, 35131 Padova, Italy

³

LFoundry s.r.l., 67051 Avezzano, Italy

^*

Author to whom correspondence should be addressed.

Electronics 2023, 12(3), 543; https://doi.org/10.3390/electronics12030543

Submission received: 30 November 2022 / Revised: 27 December 2022 / Accepted: 29 December 2022 / Published: 20 January 2023

(This article belongs to the Special Issue Radiation Tolerant Electronics, Volume III)

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Abstract

The total ionizing dose sensitivity of planar 150 nm CMOS technology is evaluated by measuring the DC responses of nMOSFETs at several irradiation steps up to 125 krad(SiO₂). Different TID sensitivities are measured for transistors built with different channel dimensions and operating voltages (I/O and core). The experimental results evidence strong relations between TID sensitivity and the doping profiles in the channel. I/O transistors have the highest TID sensitivity due to their thicker gate oxide and lower bulk doping compared with core devices. In general, narrow-channel devices have the worst degradation with negative threshold voltage shifts, transconductance variations and increased subthreshold leakage currents, suggesting charge trapping in shallow trench isolation (STI). The enhanced TID tolerance of short-channel core devices is most likely related to the increased channel doping induced by the overlapping of halo implantations. Finally, transistors fabricated for low-leakage applications exhibit near insensitivity to TID due to higher bulk doping used during the fabrication to minimize the drain-to-source leakage current.

Keywords: total ionizing dose; TID; radiation effects; 150 nm technology; MOSFET; core transistors; I/O transistors; threshold voltage shift; leakage current

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MDPI and ACS Style

Bonaldo, S.; Mattiazzo, S.; Bagatin, M.; Paccagnella, A.; Margutti, G.; Gerardin, S. Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs. Electronics 2023, 12, 543. https://doi.org/10.3390/electronics12030543

AMA Style

Bonaldo S, Mattiazzo S, Bagatin M, Paccagnella A, Margutti G, Gerardin S. Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs. Electronics. 2023; 12(3):543. https://doi.org/10.3390/electronics12030543

Chicago/Turabian Style

Bonaldo, Stefano, Serena Mattiazzo, Marta Bagatin, Alessandro Paccagnella, Giovanni Margutti, and Simone Gerardin. 2023. "Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs" Electronics 12, no. 3: 543. https://doi.org/10.3390/electronics12030543

APA Style

Bonaldo, S., Mattiazzo, S., Bagatin, M., Paccagnella, A., Margutti, G., & Gerardin, S. (2023). Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs. Electronics, 12(3), 543. https://doi.org/10.3390/electronics12030543

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Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs

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