Anomalous PBTI Effects in N-Type Super Junction under High Gate Voltage Stress
Abstract
:1. Introduction
2. Result and Discussion
2.1. Device Structure
2.2. Measurement Results and Analysis
2.3. Mechanism Explanation
3. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Tang, H.; Xu, H.; Chen, L.; Zhu, H.; Sun, Q. Anomalous PBTI Effects in N-Type Super Junction under High Gate Voltage Stress. Electronics 2022, 11, 1362. https://doi.org/10.3390/electronics11091362
Tang H, Xu H, Chen L, Zhu H, Sun Q. Anomalous PBTI Effects in N-Type Super Junction under High Gate Voltage Stress. Electronics. 2022; 11(9):1362. https://doi.org/10.3390/electronics11091362
Chicago/Turabian StyleTang, Hua, Hang Xu, Lin Chen, Hao Zhu, and Qingqing Sun. 2022. "Anomalous PBTI Effects in N-Type Super Junction under High Gate Voltage Stress" Electronics 11, no. 9: 1362. https://doi.org/10.3390/electronics11091362
APA StyleTang, H., Xu, H., Chen, L., Zhu, H., & Sun, Q. (2022). Anomalous PBTI Effects in N-Type Super Junction under High Gate Voltage Stress. Electronics, 11(9), 1362. https://doi.org/10.3390/electronics11091362